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Title: Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II

Abstract

The LCLS-II Free Electron Laser (FEL) will produce X-ray pulses with a repetition rate of up to 1 MHz and energies between 250 eV and 5 keV. Experiments conducted at LCLS-II will require 2D imaging detectors with a unique set of features, such as high-spatial resolution, low-noise performance, high-dynamic range and high-frame rates up to 1 MHz. We present the design of ePixM, a fully-depleted monolithic CMOS detector tailored for soft X-rays applications at high-repetition rates FEL. It consists of an array of 384×192 active pixel sensors, with a pixel size of 50×50 μm2 and a total sensitive area of 2×1 cm2. ePixM has been designed in a 150 nm CMOS technology on high-resistivity substrate to achieve full depletion of the substrate. Each pixel includes a Charge Sensitive Amplifier (CSA) with gain auto-ranging capability and a noise-shaper performing Correlated Double Sampling (CDS). A novel technique named correlated pre-charging removes the excess noise introduced by the gain-switching mechanism. The performance of the design has been evaluated through post-layout simulations. The Equivalent Noise Charge (ENC) of 11.3 electrons enables single-photon detection at X-ray energies down to 250 eV, and the dynamic range exceeds 103 photons at 500 eV thanks to the auto-rangingmore » circuitry.« less

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1604571
Grant/Contract Number:  
[AC02-76SF00515]
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
[ Journal Volume: 14; Journal Issue: 12]; Journal ID: ISSN 1748-0221
Country of Publication:
United States
Language:
English

Citation Formats

Rota, L., Tamma, C., Segal, J. D., Caragiulo, P., Kenney, C., and Dragone, A. Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II. United States: N. p., 2019. Web. doi:10.1088/1748-0221/14/12/c12014.
Rota, L., Tamma, C., Segal, J. D., Caragiulo, P., Kenney, C., & Dragone, A. Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II. United States. doi:10.1088/1748-0221/14/12/c12014.
Rota, L., Tamma, C., Segal, J. D., Caragiulo, P., Kenney, C., and Dragone, A. Sun . "Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II". United States. doi:10.1088/1748-0221/14/12/c12014.
@article{osti_1604571,
title = {Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II},
author = {Rota, L. and Tamma, C. and Segal, J. D. and Caragiulo, P. and Kenney, C. and Dragone, A.},
abstractNote = {The LCLS-II Free Electron Laser (FEL) will produce X-ray pulses with a repetition rate of up to 1 MHz and energies between 250 eV and 5 keV. Experiments conducted at LCLS-II will require 2D imaging detectors with a unique set of features, such as high-spatial resolution, low-noise performance, high-dynamic range and high-frame rates up to 1 MHz. We present the design of ePixM, a fully-depleted monolithic CMOS detector tailored for soft X-rays applications at high-repetition rates FEL. It consists of an array of 384×192 active pixel sensors, with a pixel size of 50×50 μm2 and a total sensitive area of 2×1 cm2. ePixM has been designed in a 150 nm CMOS technology on high-resistivity substrate to achieve full depletion of the substrate. Each pixel includes a Charge Sensitive Amplifier (CSA) with gain auto-ranging capability and a noise-shaper performing Correlated Double Sampling (CDS). A novel technique named correlated pre-charging removes the excess noise introduced by the gain-switching mechanism. The performance of the design has been evaluated through post-layout simulations. The Equivalent Noise Charge (ENC) of 11.3 electrons enables single-photon detection at X-ray energies down to 250 eV, and the dynamic range exceeds 103 photons at 500 eV thanks to the auto-ranging circuitry.},
doi = {10.1088/1748-0221/14/12/c12014},
journal = {Journal of Instrumentation},
number = [12],
volume = [14],
place = {United States},
year = {2019},
month = {12}
}

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