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Title: Epitaxial Er-doped Y 2 O 3 on silicon for quantum coherent devices

Abstract

Rare-earth ions have incomplete 4f shells and possess narrow optical intra-4f transitions due to shielding from electrons in the 5s and 5p orbitals, making them good candidates for solid-state optical quantum memory. The emission of Er3+ in the telecom C-band (1530 nm – 1565 nm) makes it especially attractive for this application. In order to build practical, scalable devices, the REI needs to be embedded in a non-interacting host material, preferably one that can be integrated with silicon. In this paper, we show that Er3+ can be isovalently incorporated into epitaxial Y2O3 thin films on Si (111). We report on the synthesis of epitaxial, single-crystalline Er:Y2O3 on Si with a narrow inhomogeneous linewidth in the photoluminescence spectra, 5.1 GHz (<100 mK) and an optical excited state lifetime of 8.1 ms. The choice of Y2O3 was driven by its low nuclear spin and small lattice mismatch with Si. Using photoluminescence (PL) and electron paramagnetic resonance, we show that Er3+ substitutes for Y in the crystal lattice. The role of interfacial SiOx, diffusion of silicon into the film, and the effect of buffer layers on inhomogeneous PL linewidth are examined. We also find that the linewidth decreased monotonically with film thickness butmore » surprisingly exhibits no correlation with the film crystalline quality as measured by the x-ray rocking curve scans suggesting other factors at play that limit the inhomogeneous broadening in Y2O3 films.« less

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [3];  [1]; ORCiD logo [3]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [2]
  1. Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
  2. Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA, Argonne National Laboratory, Lemont, Illinois 60439, USA
  3. Argonne National Laboratory, Lemont, Illinois 60439, USA
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science - Energy Frontier Research Center; US Department of the Navy, Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1604484
Alternate Identifier(s):
OSTI ID: 1604627
Grant/Contract Number:  
[AC02-05CH11231; AC02-06CH11357]
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
[Journal Name: APL Materials Journal Volume: 8 Journal Issue: 3]; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Singh, Manish Kumar, Prakash, Abhinav, Wolfowicz, Gary, Wen, Jianguo, Huang, Yizhong, Rajh, Tijana, Awschalom, David D., Zhong, Tian, and Guha, Supratik. Epitaxial Er-doped Y 2 O 3 on silicon for quantum coherent devices. United States: N. p., 2020. Web. doi:10.1063/1.5142611.
Singh, Manish Kumar, Prakash, Abhinav, Wolfowicz, Gary, Wen, Jianguo, Huang, Yizhong, Rajh, Tijana, Awschalom, David D., Zhong, Tian, & Guha, Supratik. Epitaxial Er-doped Y 2 O 3 on silicon for quantum coherent devices. United States. doi:10.1063/1.5142611.
Singh, Manish Kumar, Prakash, Abhinav, Wolfowicz, Gary, Wen, Jianguo, Huang, Yizhong, Rajh, Tijana, Awschalom, David D., Zhong, Tian, and Guha, Supratik. Sun . "Epitaxial Er-doped Y 2 O 3 on silicon for quantum coherent devices". United States. doi:10.1063/1.5142611.
@article{osti_1604484,
title = {Epitaxial Er-doped Y 2 O 3 on silicon for quantum coherent devices},
author = {Singh, Manish Kumar and Prakash, Abhinav and Wolfowicz, Gary and Wen, Jianguo and Huang, Yizhong and Rajh, Tijana and Awschalom, David D. and Zhong, Tian and Guha, Supratik},
abstractNote = {Rare-earth ions have incomplete 4f shells and possess narrow optical intra-4f transitions due to shielding from electrons in the 5s and 5p orbitals, making them good candidates for solid-state optical quantum memory. The emission of Er3+ in the telecom C-band (1530 nm – 1565 nm) makes it especially attractive for this application. In order to build practical, scalable devices, the REI needs to be embedded in a non-interacting host material, preferably one that can be integrated with silicon. In this paper, we show that Er3+ can be isovalently incorporated into epitaxial Y2O3 thin films on Si (111). We report on the synthesis of epitaxial, single-crystalline Er:Y2O3 on Si with a narrow inhomogeneous linewidth in the photoluminescence spectra, 5.1 GHz (<100 mK) and an optical excited state lifetime of 8.1 ms. The choice of Y2O3 was driven by its low nuclear spin and small lattice mismatch with Si. Using photoluminescence (PL) and electron paramagnetic resonance, we show that Er3+ substitutes for Y in the crystal lattice. The role of interfacial SiOx, diffusion of silicon into the film, and the effect of buffer layers on inhomogeneous PL linewidth are examined. We also find that the linewidth decreased monotonically with film thickness but surprisingly exhibits no correlation with the film crystalline quality as measured by the x-ray rocking curve scans suggesting other factors at play that limit the inhomogeneous broadening in Y2O3 films.},
doi = {10.1063/1.5142611},
journal = {APL Materials},
number = [3],
volume = [8],
place = {United States},
year = {2020},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1063/1.5142611

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