Physical Properties of Half-Heusler Antiferromagnet MnPtSn Single Crystal
- Renmin Univ. of China, Beijing (China)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
Herein we report the growth of ternary half-Heusler MnPtSn single crystals and detailed study on its structural and physical properties. MnPtSn single crystal has a larger lattice parameter than that in polycrystal and it exhibits antiferromagnetism with transition temperature T N at about 215 K, distinctly different from the ferromagnetism of MnPtSn polycrystal. Hall resistivity measurement indicates that the dominant carriers are hole-type and the nearly temperature-independent carrier concentration reaches about 2.86 × 1022 cm–3 at 5 K. Moreover, the carrier mobility is also rather low (4.7 cm2·V–1s–1 at 5 K). The above results strongly suggest that the significant Mn/Sn anti-site defects, i.e., the content of Mn in MnPtSn single crystal, play a vital role on structural, magnetic and transport properties
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- Fundamental Research Funds for the Central Universities; National Key R&D Program of China; National Natural Science Foundation of China (NSFC); Research Funds of Renmin University of China (RUC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1604320
- Report Number(s):
- BNL--213710-2020-JAAM
- Journal Information:
- Chinese Physics Letters, Journal Name: Chinese Physics Letters Journal Issue: 2 Vol. 37; ISSN 0256-307X
- Publisher:
- IOP PublishingCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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