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Title: Physical Properties of Half-Heusler Antiferromagnet MnPtSn Single Crystal

Journal Article · · Chinese Physics Letters

Herein we report the growth of ternary half-Heusler MnPtSn single crystals and detailed study on its structural and physical properties. MnPtSn single crystal has a larger lattice parameter than that in polycrystal and it exhibits antiferromagnetism with transition temperature T N at about 215 K, distinctly different from the ferromagnetism of MnPtSn polycrystal. Hall resistivity measurement indicates that the dominant carriers are hole-type and the nearly temperature-independent carrier concentration reaches about 2.86 × 1022 cm–3 at 5 K. Moreover, the carrier mobility is also rather low (4.7 cm2·V–1s–1 at 5 K). The above results strongly suggest that the significant Mn/Sn anti-site defects, i.e., the content of Mn in MnPtSn single crystal, play a vital role on structural, magnetic and transport properties

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
Fundamental Research Funds for the Central Universities; National Key R&D Program of China; National Natural Science Foundation of China (NSFC); Research Funds of Renmin University of China (RUC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0012704
OSTI ID:
1604320
Report Number(s):
BNL--213710-2020-JAAM
Journal Information:
Chinese Physics Letters, Journal Name: Chinese Physics Letters Journal Issue: 2 Vol. 37; ISSN 0256-307X
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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