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Title: Exceptionally high electronic mobility in defect-rich Eu 2 ZnSb 2−x Bi x alloys

Abstract

Alloying Eu 2 ZnSb 2 with Bi on the Sb site leads to an increase in mobility while still lowering the lattice thermal conductivity.

Authors:
ORCiD logo [1];  [2];  [3];  [3]; ORCiD logo [4]; ORCiD logo [5]; ORCiD logo [1];  [2]
  1. Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, USA
  2. Thermal Energy Conversion Research and Advancement Group, Jet Propulsion Laboratory, Pasadena, USA
  3. Thermal Energy Conversion Applications & Systems Group, Jet Propulsion Laboratory, Pasadena, USA
  4. Energy Technologies Area, Lawrence Berkeley National Laboratory, Berkeley, USA
  5. Department of Physics, Central Michigan University, Mt. Pleasant, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1604218
Grant/Contract Number:  
SC0006877; AC02-06CH11357; AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Materials Chemistry. A
Additional Journal Information:
Journal Name: Journal of Materials Chemistry. A Journal Volume: 8 Journal Issue: 12; Journal ID: ISSN 2050-7488
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Chanakian, Sevan, Uhl, David, Neff, David, Drymiotis, Fivos, Park, Junsoo, Petkov, Valeri, Zevalkink, Alexandra, and Bux, Sabah. Exceptionally high electronic mobility in defect-rich Eu 2 ZnSb 2−x Bi x alloys. United Kingdom: N. p., 2020. Web. doi:10.1039/C9TA14170G.
Chanakian, Sevan, Uhl, David, Neff, David, Drymiotis, Fivos, Park, Junsoo, Petkov, Valeri, Zevalkink, Alexandra, & Bux, Sabah. Exceptionally high electronic mobility in defect-rich Eu 2 ZnSb 2−x Bi x alloys. United Kingdom. https://doi.org/10.1039/C9TA14170G
Chanakian, Sevan, Uhl, David, Neff, David, Drymiotis, Fivos, Park, Junsoo, Petkov, Valeri, Zevalkink, Alexandra, and Bux, Sabah. Tue . "Exceptionally high electronic mobility in defect-rich Eu 2 ZnSb 2−x Bi x alloys". United Kingdom. https://doi.org/10.1039/C9TA14170G.
@article{osti_1604218,
title = {Exceptionally high electronic mobility in defect-rich Eu 2 ZnSb 2−x Bi x alloys},
author = {Chanakian, Sevan and Uhl, David and Neff, David and Drymiotis, Fivos and Park, Junsoo and Petkov, Valeri and Zevalkink, Alexandra and Bux, Sabah},
abstractNote = {Alloying Eu 2 ZnSb 2 with Bi on the Sb site leads to an increase in mobility while still lowering the lattice thermal conductivity.},
doi = {10.1039/C9TA14170G},
journal = {Journal of Materials Chemistry. A},
number = 12,
volume = 8,
place = {United Kingdom},
year = {Tue Mar 24 00:00:00 EDT 2020},
month = {Tue Mar 24 00:00:00 EDT 2020}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1039/C9TA14170G

Citation Metrics:
Cited by: 14 works
Citation information provided by
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