Cavity Engineering of Photon–Phonon Interactions in Si Nanocavities

Agarwal, Daksh; Yoo, Jinkyoung; Pan, Anlian; Agarwal, Ritesh

doi:10.1021/acs.nanolett.9b03120

Title: Cavity Engineering of Photon–Phonon Interactions in Si Nanocavities

Abstract

The ever-increasing demand for faster, smaller, and energy-efficient devices has pushed the frontiers of research toward silicon photonics to meet the challenges for fabricating the next generation of computing systems. In order to design new devices at the nanoscale, it is important to understand and be able to control material properties, which may differ significantly from their bulk counterparts. Here, we demonstrate very large tunability of phonon–photon interactions in Si nanowire cavities by engineering the cavity mode at the emission wavelength. Raman scattering measurements performed to quantify these interactions reveal that the anti-Stokes to Stokes scattering ratio can vary from 0.035 to 0.405 in Si nanowires compared to a value of 0.1 for bulk Si, demonstrating tunability by over an order of magnitude. Moreover, a ratio of 0.85 was attained at a temperature of 580 K, which is the highest value ever reported for Si. Cavity modes that can be easily changed by changing the nanowire diameter, cavity geometry, or excitation wavelength provide efficient ways of tuning these interactions. Nanocavity engineering offers a new approach for tuning phonon–photon interactions in silicon and opens up new avenues of research and applications in the fields of silicon photonics, Raman lasers, telecommunication, andmore » optical cooling.« less

Authors:

Agarwal, Daksh ^[1]; Yoo, Jinkyoung ^[2];

^[3];

^[1]

Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering
Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
Hunan Univ., Changsha (China). Key Lab. for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering

Publication Date:: Mon Oct 28 00:00:00 EDT 2019

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1604035

Report Number(s):: LA-UR-19-25945
Journal ID: ISSN 1530-6984

Grant/Contract Number:: 89233218CNA000001

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 19; Journal Issue: 11; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Material Science; Nanowires; Scattering; Silicon; Quantum mechanics; Cavities

Citation Formats


                    Agarwal, Daksh, Yoo, Jinkyoung, Pan, Anlian, and Agarwal, Ritesh. Cavity Engineering of Photon–Phonon Interactions in Si Nanocavities.  United States: N. p., 2019. 
Web.  doi:10.1021/acs.nanolett.9b03120.

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                    Agarwal, Daksh, Yoo, Jinkyoung, Pan, Anlian, & Agarwal, Ritesh. Cavity Engineering of Photon–Phonon Interactions in Si Nanocavities.  United States.  https://doi.org/10.1021/acs.nanolett.9b03120

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                    Agarwal, Daksh, Yoo, Jinkyoung, Pan, Anlian, and Agarwal, Ritesh. Mon .  
"Cavity Engineering of Photon–Phonon Interactions in Si Nanocavities".  United States.  https://doi.org/10.1021/acs.nanolett.9b03120.  https://www.osti.gov/servlets/purl/1604035.

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@article{osti_1604035,

  title        = {Cavity Engineering of Photon–Phonon Interactions in Si Nanocavities},

  author       = {Agarwal, Daksh and Yoo, Jinkyoung and Pan, Anlian and Agarwal, Ritesh},

  abstractNote = {The ever-increasing demand for faster, smaller, and energy-efficient devices has pushed the frontiers of research toward silicon photonics to meet the challenges for fabricating the next generation of computing systems. In order to design new devices at the nanoscale, it is important to understand and be able to control material properties, which may differ significantly from their bulk counterparts. Here, we demonstrate very large tunability of phonon–photon interactions in Si nanowire cavities by engineering the cavity mode at the emission wavelength. Raman scattering measurements performed to quantify these interactions reveal that the anti-Stokes to Stokes scattering ratio can vary from 0.035 to 0.405 in Si nanowires compared to a value of 0.1 for bulk Si, demonstrating tunability by over an order of magnitude. Moreover, a ratio of 0.85 was attained at a temperature of 580 K, which is the highest value ever reported for Si. Cavity modes that can be easily changed by changing the nanowire diameter, cavity geometry, or excitation wavelength provide efficient ways of tuning these interactions. Nanocavity engineering offers a new approach for tuning phonon–photon interactions in silicon and opens up new avenues of research and applications in the fields of silicon photonics, Raman lasers, telecommunication, and optical cooling.},

  doi          = {10.1021/acs.nanolett.9b03120},

  journal      = {Nano Letters},

  number       = 11,

  volume       = 19,

  place        = {United States},

  year         = {Mon Oct 28 00:00:00 EDT 2019},

  month        = {Mon Oct 28 00:00:00 EDT 2019}

}

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Figures / Tables:

Table 1: The cavity mode ratio and scattering ratio values

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