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Title: Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film

Journal Article · · Advanced Materials
ORCiD logo [1];  [2];  [2];  [3];  [3];  [3];  [4];  [4];  [1];  [1];  [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  2. Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  4. Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences
+ Show Author Affiliations

Ferroelectric domain walls in single-crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond-breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy-induced compressive strain.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1603948
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 4 Vol. 32; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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36 MATERIALS SCIENCE
complex oxide
domain walls
ferroelectric
freestanding
single crystal