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Title: Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film

Abstract

Ferroelectric domain walls in single-crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond-breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy-induced compressive strain.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [3];  [3];  [4];  [4];  [1];  [1];  [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  2. Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  4. Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1603948
Alternate Identifier(s):
OSTI ID: 1577878
Grant/Contract Number:  
[AC02-06CH11357; AC02‐ 06CH11357]
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
[ Journal Volume: 32; Journal Issue: 4]; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
complex oxide; domain walls; ferroelectric; freestanding; single crystal

Citation Formats

Bakaul, Saidur R., Kim, Jaegyu, Hong, Seungbum, Cherukara, Mathew J., Zhou, Tao, Stan, Liliana, Serrao, Claudy R., Salahuddin, Sayeef, Petford‐Long, Amanda K., Fong, Dillon D., and Holt, Martin V. Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film. United States: N. p., 2019. Web. doi:10.1002/adma.201907036.
Bakaul, Saidur R., Kim, Jaegyu, Hong, Seungbum, Cherukara, Mathew J., Zhou, Tao, Stan, Liliana, Serrao, Claudy R., Salahuddin, Sayeef, Petford‐Long, Amanda K., Fong, Dillon D., & Holt, Martin V. Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film. United States. doi:10.1002/adma.201907036.
Bakaul, Saidur R., Kim, Jaegyu, Hong, Seungbum, Cherukara, Mathew J., Zhou, Tao, Stan, Liliana, Serrao, Claudy R., Salahuddin, Sayeef, Petford‐Long, Amanda K., Fong, Dillon D., and Holt, Martin V. Mon . "Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film". United States. doi:10.1002/adma.201907036.
@article{osti_1603948,
title = {Ferroelectric Domain Wall Motion in Freestanding Single-Crystal Complex Oxide Thin Film},
author = {Bakaul, Saidur R. and Kim, Jaegyu and Hong, Seungbum and Cherukara, Mathew J. and Zhou, Tao and Stan, Liliana and Serrao, Claudy R. and Salahuddin, Sayeef and Petford‐Long, Amanda K. and Fong, Dillon D. and Holt, Martin V.},
abstractNote = {Ferroelectric domain walls in single-crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond-breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy-induced compressive strain.},
doi = {10.1002/adma.201907036},
journal = {Advanced Materials},
number = [4],
volume = [32],
place = {United States},
year = {2019},
month = {12}
}

Journal Article:
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