Epitaxial growth of rock salt MgZrN2 semiconductors on MgO and GaN

Bauers, Sage R.; Mangum, John; Harvey, Steven P.; Perkins, John D.; Gorman, Brian; Zakutayev, Andriy

doi:10.1063/1.5140469

Title: Epitaxial growth of rock salt MgZrN₂ semiconductors on MgO and GaN

Abstract

Ternary nitride compound semiconductors have attracted recent attention as electronic materials since their properties can be tuned by cation stoichiometry and ordering. A recently discovered example is MgZrN₂, a ternary analog to the rock salt semiconductor ScN. MgZrN₂ has a larger bandgap and stronger dielectric response than the binary compound. Polycrystalline thin films of MgZrN₂ have been studied, but demonstration of high-quality growth is still required to establish its suitability for technological applications. Here, we report on epitaxial growth of MgZrN₂ thin films on (100) and (111) MgO substrates and (001) GaN templates. The MgZrN₂ composition is confirmed by Rutherford backscattering spectrometry, showing no oxygen in the film except for a thin surface oxide layer. Epitaxial growth results in MgZrN₂ with x-ray diffraction rocking curves with a full-width at half-maximum in the range of 0.3–3.0°, depending on the substrate. Transmission electron microscopy analysis of the MgZrN₂ film grown on a (111) MgO substrate confirms epitaxial growth and shows a sharp film/substrate interface. In-plane temperature-dependent Hall effect measurements show that the material is an n-type semiconductor with a relatively high concentration (n_300K ≈ 10¹⁹–10²⁰cm^-3) of thermally activated electrons. Room-temperature transport measurements show a conductivity of 25 S cm^-1 and a Seebeckmore »« less

Authors:

^[1]; Mangum, John ^[2];

^[1]; Perkins, John D. ^[1];

^[2];

^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Colorado School of Mines, Golden, CO (United States)

Publication Date:: Mon Mar 09 00:00:00 EDT 2020

Research Org.:: Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1606310

Alternate Identifier(s):: OSTI ID: 1603802

Report Number(s):: NREL/JA-5K00-75405
Journal ID: ISSN 0003-6951; MainId:22236;UUID:cc8bbd56-ae04-ea11-9c2a-ac162d87dfe5;MainAdminID:10712; TRN: US2104494

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 116; Journal Issue: 10; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; thermoelectric effects; semiconductors; x-ray diffraction; transmission electron microscopy; hall effect; epitaxy; sputter deposition; thin films; Rutherford backscattering spectroscopy; nitrides

Citation Formats


                    Bauers, Sage R., Mangum, John, Harvey, Steven P., Perkins, John D., Gorman, Brian, and Zakutayev, Andriy. Epitaxial growth of rock salt MgZrN2 semiconductors on MgO and GaN.  United States: N. p., 2020. 
Web.  doi:10.1063/1.5140469.

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                    Bauers, Sage R., Mangum, John, Harvey, Steven P., Perkins, John D., Gorman, Brian, & Zakutayev, Andriy. Epitaxial growth of rock salt MgZrN2 semiconductors on MgO and GaN.  United States.  https://doi.org/10.1063/1.5140469

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                    Bauers, Sage R., Mangum, John, Harvey, Steven P., Perkins, John D., Gorman, Brian, and Zakutayev, Andriy. Mon .  
"Epitaxial growth of rock salt MgZrN2 semiconductors on MgO and GaN".  United States.  https://doi.org/10.1063/1.5140469.  https://www.osti.gov/servlets/purl/1606310.

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@article{osti_1606310,

  title        = {Epitaxial growth of rock salt MgZrN2 semiconductors on MgO and GaN},

  author       = {Bauers, Sage R. and Mangum, John and Harvey, Steven P. and Perkins, John D. and Gorman, Brian and Zakutayev, Andriy},

  abstractNote = {Ternary nitride compound semiconductors have attracted recent attention as electronic materials since their properties can be tuned by cation stoichiometry and ordering. A recently discovered example is MgZrN2, a ternary analog to the rock salt semiconductor ScN. MgZrN2 has a larger bandgap and stronger dielectric response than the binary compound. Polycrystalline thin films of MgZrN2 have been studied, but demonstration of high-quality growth is still required to establish its suitability for technological applications. Here, we report on epitaxial growth of MgZrN2 thin films on (100) and (111) MgO substrates and (001) GaN templates. The MgZrN2 composition is confirmed by Rutherford backscattering spectrometry, showing no oxygen in the film except for a thin surface oxide layer. Epitaxial growth results in MgZrN2 with x-ray diffraction rocking curves with a full-width at half-maximum in the range of 0.3–3.0°, depending on the substrate. Transmission electron microscopy analysis of the MgZrN2 film grown on a (111) MgO substrate confirms epitaxial growth and shows a sharp film/substrate interface. In-plane temperature-dependent Hall effect measurements show that the material is an n-type semiconductor with a relatively high concentration (n300K ≈ 1019–1020cm-3) of thermally activated electrons. Room-temperature transport measurements show a conductivity of 25 S cm-1 and a Seebeck coefficient of -80 μV K-1. Overall, these results provide an important step toward integration of rock salt MgZrN2 with other technological nitrides for device applications.},

  doi          = {10.1063/1.5140469},

  journal      = {Applied Physics Letters},

  number       = 10,

  volume       = 116,

  place        = {United States},

  year         = {Mon Mar 09 00:00:00 EDT 2020},

  month        = {Mon Mar 09 00:00:00 EDT 2020}

}

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Works referenced in this record:

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
journal, November 2001

Klein, P. B.; Binari, S. C.; Ikossi, K.
Applied Physics Letters, Vol. 79, Issue 21
DOI: 10.1063/1.1418452

Theoretical study of phase stability, crystal and electronic structure of MeMgN2 (Me = Ti, Zr, Hf) compounds
journal, November 2017

Gharavi, M. A.; Armiento, R.; Alling, B.
Journal of Materials Science, Vol. 53, Issue 6
DOI: 10.1007/s10853-017-1849-0

Material selection for hard coatings
journal, November 1986

Holleck, H.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 4, Issue 6
DOI: 10.1116/1.573700

Nitrogen Compounds of Gallium. III
journal, October 1932

Johnson, W. C.; Parson, J. B.; Crew, M. C.
The Journal of Physical Chemistry, Vol. 36, Issue 10
DOI: 10.1021/j150340a015

Monte Carlo simulations of disorder in $ZnSn N_{2}$ and the effects on the electronic structure
journal, August 2017

Lany, Stephan; Fioretti, Angela N.; Zawadzki, Paweł P.
Physical Review Materials, Vol. 1, Issue 3
DOI: 10.1103/PhysRevMaterials.1.035401

Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors
journal, February 2017

Fioretti, Angela N.; Stokes, Adam; Young, Matthew R.
Advanced Electronic Materials, Vol. 3, Issue 3
DOI: 10.1002/aelm.201600544

High Temperature Hall sensors using AlGaN/GaN HEMT Structures
journal, March 2012

Koide, S.; Takahashi, H.; Abderrahmane, A.
Journal of Physics: Conference Series, Vol. 352
DOI: 10.1088/1742-6596/352/1/012009

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
journal, October 2015

Nakamura, Shuji
Reviews of Modern Physics, Vol. 87, Issue 4
DOI: 10.1103/RevModPhys.87.1139

Fully strained epitaxial Ti1−Mg N(001) layers
journal, October 2019

Wang, Baiwei; Gall, Daniel
Thin Solid Films, Vol. 688
DOI: 10.1016/j.tsf.2019.02.028

Design of nitride semiconductors for solar energy conversion
journal, January 2016

Zakutayev, Andriy
Journal of Materials Chemistry A, Vol. 4, Issue 18
DOI: 10.1039/C5TA09446A

Complex thermoelectric materials
journal, February 2008

Snyder, G. Jeffrey; Toberer, Eric S.
Nature Materials, Vol. 7, Issue 2, p. 105-114
DOI: 10.1038/nmat2090

Spontaneous polarization and piezoelectric constants of III-V nitrides
journal, October 1997

Bernardini, Fabio; Fiorentini, Vincenzo; Vanderbilt, David
Physical Review B, Vol. 56, Issue 16, p. R10024-R10027
DOI: 10.1103/PhysRevB.56.R10024

Preparation and Structural Properties of GaN Thin Films
journal, July 1969

Kosicki, B. B.; Kahng, D.
Journal of Vacuum Science and Technology, Vol. 6, Issue 4
DOI: 10.1116/1.1315693

Ternary nitride semiconductors in the rocksalt crystal structure
journal, July 2019

Bauers, Sage R.; Holder, Aaron; Sun, Wenhao
Proceedings of the National Academy of Sciences, Vol. 116, Issue 30
DOI: 10.1073/pnas.1904926116

Composition, structure, and semiconducting properties of Mg _x Zr _{2− x} N ₂ thin films
journal, May 2019

Bauers, Sage R.; Hamann, Danielle M.; Patterson, Ashlea
Japanese Journal of Applied Physics, Vol. 58, Issue SC
DOI: 10.7567/1347-4065/ab0f0f

Synthesis, structure, and optoelectronic properties of II–IV–V ₂ materials
journal, January 2017

Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.
Journal of Materials Chemistry A, Vol. 5, Issue 23
DOI: 10.1039/C7TA00406K

COMBIgor: Data-Analysis Package for Combinatorial Materials Science
journal, May 2019

Talley, Kevin R.; Bauers, Sage R.; Melamed, Celeste L.
ACS Combinatorial Science, Vol. 21, Issue 7
DOI: 10.1021/acscombsci.9b00077

Gallium Nitride as an Electromechanical Material
journal, December 2014

Rais-Zadeh, Mina; Gokhale, Vikrant Jayant; Ansari, Azadeh
Journal of Microelectromechanical Systems, Vol. 23, Issue 6
DOI: 10.1109/JMEMS.2014.2352617

Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition
journal, July 1998

Gall, D.; Petrov, I.; Madsen, L. D.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 4
DOI: 10.1116/1.581360

THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
journal, November 1969

Maruska, H. P.; Tietjen, J. J.
Applied Physics Letters, Vol. 15, Issue 10
DOI: 10.1063/1.1652845

Interplay between Composition, Electronic Structure, Disorder, and Doping due to Dual Sublattice Mixing in Nonequilibrium Synthesis of ZnSnN ₂ :O
journal, January 2019

Pan, Jie; Cordell, Jacob; Tucker, Garritt J.
Advanced Materials, Vol. 31, Issue 11
DOI: 10.1002/adma.201807406

First principles high throughput screening of oxynitrides for water-splitting photocatalysts
journal, January 2013

Wu, Yabi; Lazic, Predrag; Hautier, Geoffroy
Energy Environ. Sci., Vol. 6, Issue 1
DOI: 10.1039/C2EE23482C

Growth and properties of epitaxial Ti _{1− x} Mg _x N(001) layers
journal, November 2018

Wang, Baiwei; Kerdsongpanya, Sit; McGahay, Mary E.
Journal of Vacuum Science & Technology A, Vol. 36, Issue 6
DOI: 10.1116/1.5049957

A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)
journal, May 2009

Liu, Min-Ling; Huang, Fu-Qiang; Chen, Li-Dong
Applied Physics Letters, Vol. 94, Issue 20
DOI: 10.1063/1.3130718

A semiautomatic algorithm for rutherford backscattering analysis
journal, April 1986

Doolittle, Lawrence R.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 15, Issue 1-6
DOI: 10.1016/0168-583X(86)90291-0

GaN-Based RF Power Devices and Amplifiers
journal, February 2008

Mishra, U. K.; Kazior, T. E.
Proceedings of the IEEE, Vol. 96, Issue 2
DOI: 10.1109/JPROC.2007.911060

New Unipolar Switching Power Device Figures of Merit
journal, May 2004

Huang, A. Q.
IEEE Electron Device Letters, Vol. 25, Issue 5
DOI: 10.1109/LED.2004.826533

Nitride-based semiconductors for blue and green light-emitting devices
journal, March 1997

Ponce, F. A.; Bour, D. P.
Nature, Vol. 386, Issue 6623
DOI: 10.1038/386351a0

Anomalously high thermoelectric power factor in epitaxial ScN thin films
journal, December 2011

Kerdsongpanya, Sit; Van Nong, Ngo; Pryds, Nini
Applied Physics Letters, Vol. 99, Issue 23
DOI: 10.1063/1.3665945

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Title: Epitaxial growth of rock salt MgZrN2 semiconductors on MgO and GaN

Abstract

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Title: Epitaxial growth of rock salt MgZrN₂ semiconductors on MgO and GaN

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