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Title: Epitaxial growth of rock salt MgZrN 2 semiconductors on MgO and GaN

Authors:
ORCiD logo [1];  [2];  [1];  [1]; ORCiD logo [2]; ORCiD logo [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
  2. Colorado School of Mines, Golden, Colorado 80401, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1603802
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
[Journal Name: Applied Physics Letters Journal Volume: 116 Journal Issue: 10]; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Bauers, Sage R., Mangum, John, Harvey, Steven P., Perkins, John D., Gorman, Brian, and Zakutayev, Andriy. Epitaxial growth of rock salt MgZrN 2 semiconductors on MgO and GaN. United States: N. p., 2020. Web. doi:10.1063/1.5140469.
Bauers, Sage R., Mangum, John, Harvey, Steven P., Perkins, John D., Gorman, Brian, & Zakutayev, Andriy. Epitaxial growth of rock salt MgZrN 2 semiconductors on MgO and GaN. United States. doi:10.1063/1.5140469.
Bauers, Sage R., Mangum, John, Harvey, Steven P., Perkins, John D., Gorman, Brian, and Zakutayev, Andriy. Mon . "Epitaxial growth of rock salt MgZrN 2 semiconductors on MgO and GaN". United States. doi:10.1063/1.5140469.
@article{osti_1603802,
title = {Epitaxial growth of rock salt MgZrN 2 semiconductors on MgO and GaN},
author = {Bauers, Sage R. and Mangum, John and Harvey, Steven P. and Perkins, John D. and Gorman, Brian and Zakutayev, Andriy},
abstractNote = {},
doi = {10.1063/1.5140469},
journal = {Applied Physics Letters},
number = [10],
volume = [116],
place = {United States},
year = {2020},
month = {3}
}

Journal Article:
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