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Title: The role of chemical potential in compensation control in Si:AlGaN

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [2];  [2];  [2]; ORCiD logo [3];  [1]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA
  2. Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
  3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA, Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1603801
Grant/Contract Number:  
SC0011883
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 127 Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Washiyama, Shun, Reddy, Pramod, Sarkar, Biplab, Breckenridge, Mathew H., Guo, Qiang, Bagheri, Pegah, Klump, Andrew, Kirste, Ronny, Tweedie, James, Mita, Seiji, Sitar, Zlatko, and Collazo, Ramón. The role of chemical potential in compensation control in Si:AlGaN. United States: N. p., 2020. Web. doi:10.1063/1.5132953.
Washiyama, Shun, Reddy, Pramod, Sarkar, Biplab, Breckenridge, Mathew H., Guo, Qiang, Bagheri, Pegah, Klump, Andrew, Kirste, Ronny, Tweedie, James, Mita, Seiji, Sitar, Zlatko, & Collazo, Ramón. The role of chemical potential in compensation control in Si:AlGaN. United States. doi:10.1063/1.5132953.
Washiyama, Shun, Reddy, Pramod, Sarkar, Biplab, Breckenridge, Mathew H., Guo, Qiang, Bagheri, Pegah, Klump, Andrew, Kirste, Ronny, Tweedie, James, Mita, Seiji, Sitar, Zlatko, and Collazo, Ramón. Sat . "The role of chemical potential in compensation control in Si:AlGaN". United States. doi:10.1063/1.5132953.
@article{osti_1603801,
title = {The role of chemical potential in compensation control in Si:AlGaN},
author = {Washiyama, Shun and Reddy, Pramod and Sarkar, Biplab and Breckenridge, Mathew H. and Guo, Qiang and Bagheri, Pegah and Klump, Andrew and Kirste, Ronny and Tweedie, James and Mita, Seiji and Sitar, Zlatko and Collazo, Ramón},
abstractNote = {},
doi = {10.1063/1.5132953},
journal = {Journal of Applied Physics},
number = 10,
volume = 127,
place = {United States},
year = {2020},
month = {3}
}

Journal Article:
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Works referenced in this record:

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