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Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe 2 Films

Abstract

Platinum ditelluride (PtTe2), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two tri-atomic layers (TLs) with a negative gap of -0.36 eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79 eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.

Authors:
 [1]; ORCiD logo [2];  [1]; ORCiD logo [3]; ORCiD logo [4];  [2];  [5]; ORCiD logo [6]; ORCiD logo [2]; ORCiD logo [1]
  1. Univ. of Illinois at Urbana-Champaign, IL (United States)
  2. National Sun Yat-Sen Univ. (Taiwan)
  3. Univ. of Illinois at Urbana-Champaign, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Shanghai Jiao Tong Univ. (China)
  4. Univ. of Illinois at Urbana-Champaign, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Academia Sinica, Taipei (Taiwan)
  5. Univ. Paris-Saclay, Gif-sur-Yvette (France)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of Illinois at Urbana-Champaign, IL (United States); Univ. of Illinois, Chicago, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1603577
Alternate Identifier(s):
OSTI ID: 1598478
Grant/Contract Number:  
AC02-05CH11231; FG02-07ER46383
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 124; Journal Issue: 3; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; Transition metal dichalcogenides, PtTe2, single layer, semimetals, semiconductors, phase transitions

Citation Formats

Lin, Meng-Kai, Villaos, Rovi Angelo B., Hlevyack, Joseph A., Chen, Peng, Liu, Ro-Ya, Hsu, Chia-Hsiu, Avila, José, Mo, Sung-Kwan, Chuang, Feng-Chuan, and Chiang, T. -C. Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films. United States: N. p., 2020. Web. doi:10.1103/physrevlett.124.036402.
Lin, Meng-Kai, Villaos, Rovi Angelo B., Hlevyack, Joseph A., Chen, Peng, Liu, Ro-Ya, Hsu, Chia-Hsiu, Avila, José, Mo, Sung-Kwan, Chuang, Feng-Chuan, & Chiang, T. -C. Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films. United States. doi:https://doi.org/10.1103/physrevlett.124.036402
Lin, Meng-Kai, Villaos, Rovi Angelo B., Hlevyack, Joseph A., Chen, Peng, Liu, Ro-Ya, Hsu, Chia-Hsiu, Avila, José, Mo, Sung-Kwan, Chuang, Feng-Chuan, and Chiang, T. -C. Fri . "Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films". United States. doi:https://doi.org/10.1103/physrevlett.124.036402. https://www.osti.gov/servlets/purl/1603577.
@article{osti_1603577,
title = {Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films},
author = {Lin, Meng-Kai and Villaos, Rovi Angelo B. and Hlevyack, Joseph A. and Chen, Peng and Liu, Ro-Ya and Hsu, Chia-Hsiu and Avila, José and Mo, Sung-Kwan and Chuang, Feng-Chuan and Chiang, T. -C.},
abstractNote = {Platinum ditelluride (PtTe2), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two tri-atomic layers (TLs) with a negative gap of -0.36 eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79 eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.},
doi = {10.1103/physrevlett.124.036402},
journal = {Physical Review Letters},
number = 3,
volume = 124,
place = {United States},
year = {2020},
month = {1}
}

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