Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films

Lin, Meng-Kai; Villaos, Rovi Angelo B.; Hlevyack, Joseph A.; Chen, Peng; Liu, Ro-Ya; Hsu, Chia-Hsiu; Avila, José; Mo, Sung-Kwan; Chuang, Feng-Chuan; Chiang, T. -C.

doi:10.1103/physrevlett.124.036402

Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin ${PtTe}_{2}$ Films

Abstract

Platinum ditelluride (PtTe2), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two tri-atomic layers (TLs) with a negative gap of -0.36 eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79 eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.

Authors:

Lin, Meng-Kai ^[1];

^[2]; Hlevyack, Joseph A. ^[1];

^[3];

^[4]; Hsu, Chia-Hsiu ^[2]; Avila, José ^[5];

^[6];

^[2];

^[1]

Univ. of Illinois at Urbana-Champaign, IL (United States)
National Sun Yat-Sen Univ. (Taiwan)
Univ. of Illinois at Urbana-Champaign, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Shanghai Jiao Tong Univ. (China)
Univ. of Illinois at Urbana-Champaign, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Academia Sinica, Taipei (Taiwan)
Univ. Paris-Saclay, Gif-sur-Yvette (France)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:: 2020-01-24

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of Illinois at Urbana-Champaign, IL (United States); Univ. of Illinois, Chicago, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

OSTI Identifier:: 1603577

Alternate Identifier(s):: OSTI ID: 1598478

Grant/Contract Number:: AC02-05CH11231; FG02-07ER46383

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 124; Journal Issue: 3; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; Transition metal dichalcogenides, PtTe2, single layer, semimetals, semiconductors, phase transitions

Citation Formats


                    Lin, Meng-Kai, Villaos, Rovi Angelo B., Hlevyack, Joseph A., Chen, Peng, Liu, Ro-Ya, Hsu, Chia-Hsiu, Avila, José, Mo, Sung-Kwan, Chuang, Feng-Chuan, and Chiang, T. -C. Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films.  United States: N. p., 2020. 
Web.  doi:10.1103/physrevlett.124.036402.

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                    Lin, Meng-Kai, Villaos, Rovi Angelo B., Hlevyack, Joseph A., Chen, Peng, Liu, Ro-Ya, Hsu, Chia-Hsiu, Avila, José, Mo, Sung-Kwan, Chuang, Feng-Chuan, & Chiang, T. -C. Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films.  United States.  https://doi.org/10.1103/physrevlett.124.036402

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                    Lin, Meng-Kai, Villaos, Rovi Angelo B., Hlevyack, Joseph A., Chen, Peng, Liu, Ro-Ya, Hsu, Chia-Hsiu, Avila, José, Mo, Sung-Kwan, Chuang, Feng-Chuan, and Chiang, T. -C. Fri .  
"Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films".  United States.  https://doi.org/10.1103/physrevlett.124.036402.  https://www.osti.gov/servlets/purl/1603577.

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@article{osti_1603577,

  title        = {Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films},

  author       = {Lin, Meng-Kai and Villaos, Rovi Angelo B. and Hlevyack, Joseph A. and Chen, Peng and Liu, Ro-Ya and Hsu, Chia-Hsiu and Avila, José and Mo, Sung-Kwan and Chuang, Feng-Chuan and Chiang, T. -C.},

  abstractNote = {Platinum ditelluride (PtTe2), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two tri-atomic layers (TLs) with a negative gap of -0.36 eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79 eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.},

  doi          = {10.1103/physrevlett.124.036402},

  journal      = {Physical Review Letters},

  number       = 3,

  volume       = 124,

  place        = {United States},

  year         = {2020},

  month        = {1}

}

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Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe 2 Films

Abstract

Citation Formats

Generalized Gradient Approximation Made Simple journal, October 1996

Projector augmented-wave method journal, December 1994

Large, non-saturating magnetoresistance in WTe2 journal, September 2014

Influence of the exchange screening parameter on the performance of screened hybrid functionals journal, December 2006

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Electrical Tuning of the Excitonic Insulator Ground State of Ta 2 NiSe 5 journal, November 2019

Large quantum-spin-Hall gap in single-layer 1T′ WSe2 journal, May 2018

Inhomogeneous Electron Gas journal, March 1973

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Photo-induced semimetallic states realised in electron–hole coupled insulators journal, October 2018

Atomically Thin MoS2 A New Direct-Gap Semiconductor journal, September 2010

Ab initiomolecular dynamics for liquid metals journal, January 1993

From Mott state to superconductivity in 1T-TaS2 journal, November 2008

Quasiparticle dynamics in graphene journal, December 2006

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Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin ${PtTe}_{2}$ Films

Generalized Gradient Approximation Made Simple
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Large, non-saturating magnetoresistance in WTe2
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Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect
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Direct observation of spin-layer locking by local Rashba effect in monolayer semiconducting PtSe2 film
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journal, November 2008

Quasiparticle dynamics in graphene
journal, December 2006

Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5
journal, February 2017

Photoemission studies of quantum well states in thin films
journal, September 2000

Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂
journal, December 2012

Possibility of an excitonic insulator at the semiconductor-semimetal transition
journal, October 2006

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties
journal, August 2020

Chemical accuracy for the van der Waals density functional
preprint, January 2009

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
text, January 2012

Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$
text, January 2016

High quality atomically thin PtSe2 films grown by molecular beam epitaxy
text, January 2017

Photo-induced semimetallic states realised in electron-hole coupled insulators
text, January 2018

Crossover from 2D metal to 3D Dirac semimetal in metallic PtTe2 films with local Rashba effect
text, January 2019

On the possibility of an excitonic insulator at the semiconductor-semimetal transition
text, January 2006