Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films

Lin, Meng-Kai; Villaos, Rovi Angelo B.; Hlevyack, Joseph A.; Chen, Peng; Liu, Ro-Ya; Hsu, Chia-Hsiu; Avila, José; Mo, Sung-Kwan; Chuang, Feng-Chuan; Chiang, T. -C.

doi:10.1103/physrevlett.124.036402

Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin ${PtTe}_{2}$ Films

Abstract

Platinum ditelluride (PtTe2), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two tri-atomic layers (TLs) with a negative gap of -0.36 eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79 eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.

Authors:

Lin, Meng-Kai ^[1];

^[2]; Hlevyack, Joseph A. ^[1];

^[3];

^[4]; Hsu, Chia-Hsiu ^[2]; Avila, José ^[5];

^[6];

^[2];

^[1]

Univ. of Illinois at Urbana-Champaign, IL (United States)
National Sun Yat-Sen Univ. (Taiwan)
Univ. of Illinois at Urbana-Champaign, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Shanghai Jiao Tong Univ. (China)
Univ. of Illinois at Urbana-Champaign, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Academia Sinica, Taipei (Taiwan)
Univ. Paris-Saclay, Gif-sur-Yvette (France)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:: 2020-01-24

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of Illinois at Urbana-Champaign, IL (United States); Univ. of Illinois, Chicago, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

OSTI Identifier:: 1603577

Alternate Identifier(s):: OSTI ID: 1598478

Grant/Contract Number:: AC02-05CH11231; FG02-07ER46383

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 124; Journal Issue: 3; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; Transition metal dichalcogenides, PtTe2, single layer, semimetals, semiconductors, phase transitions

Citation Formats


                    Lin, Meng-Kai, Villaos, Rovi Angelo B., Hlevyack, Joseph A., Chen, Peng, Liu, Ro-Ya, Hsu, Chia-Hsiu, Avila, José, Mo, Sung-Kwan, Chuang, Feng-Chuan, and Chiang, T. -C. Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films.  United States: N. p., 2020. 
        Web.  doi:10.1103/physrevlett.124.036402.

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                    Lin, Meng-Kai, Villaos, Rovi Angelo B., Hlevyack, Joseph A., Chen, Peng, Liu, Ro-Ya, Hsu, Chia-Hsiu, Avila, José, Mo, Sung-Kwan, Chuang, Feng-Chuan, & Chiang, T. -C. Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films.  United States.  doi:https://doi.org/10.1103/physrevlett.124.036402

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                    Lin, Meng-Kai, Villaos, Rovi Angelo B., Hlevyack, Joseph A., Chen, Peng, Liu, Ro-Ya, Hsu, Chia-Hsiu, Avila, José, Mo, Sung-Kwan, Chuang, Feng-Chuan, and Chiang, T. -C. Fri .  
        "Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films".  United States.  doi:https://doi.org/10.1103/physrevlett.124.036402.  https://www.osti.gov/servlets/purl/1603577.

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@article{osti_1603577,

  title        = {Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films},

  author       = {Lin, Meng-Kai and Villaos, Rovi Angelo B. and Hlevyack, Joseph A. and Chen, Peng and Liu, Ro-Ya and Hsu, Chia-Hsiu and Avila, José and Mo, Sung-Kwan and Chuang, Feng-Chuan and Chiang, T. -C.},

  abstractNote = {Platinum ditelluride (PtTe2), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two tri-atomic layers (TLs) with a negative gap of -0.36 eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79 eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.},

  doi          = {10.1103/physrevlett.124.036402},

  journal      = {Physical Review Letters},

  number       = 3,

  volume       = 124,

  place        = {United States},

  year         = {2020},

  month        = {1}

}

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DOI: https://doi.org/10.1103/physrevlett.124.036402

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Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe 2 Films

Abstract

Citation Formats

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Large, non-saturating magnetoresistance in WTe2 journal, September 2014

MoTe 2 : A Type-II Weyl Topological Metal journal, July 2016

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Electronic properties of single-layer and multilayer transition metal dichalcogenides MX 2 ( M = Mo, W and X = S, Se): Electronic properties of TMDs journal, September 2014

Evolution of Electronic Structure in Atomically Thin Sheets of WS 2 and WSe 2 journal, December 2012

Atomically Thin MoS2 A New Direct-Gap Semiconductor journal, September 2010

Emerging Photoluminescence in Monolayer MoS2 journal, April 2010

Thickness dependent electronic properties of Pt dichalcogenides journal, January 2019

Monolayer PtSe 2 , a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt journal, May 2015

Direct observation of spin-layer locking by local Rashba effect in monolayer semiconducting PtSe2 film journal, January 2017

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Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe2 journal, August 2017

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Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin ${PtTe}_{2}$ Films

From Mott state to superconductivity in 1T-TaS2
journal, November 2008

Large, non-saturating magnetoresistance in WTe2
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${MoTe}_{2}$ : A Type-II Weyl Topological Metal
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High-quality monolayer superconductor NbSe2 grown by chemical vapour deposition
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Electronic properties of single-layer and multilayer transition metal dichalcogenides MX ₂ ( M = Mo, W and X = S, Se): Electronic properties of TMDs
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