Tunneling electroresistance effects in epitaxial complex oxides on silicon

Journal Article · 21 January 2020 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5133081 · OSTI ID:1603317

Abuwasib, Mohammad  ^[1]; Serrao, Claudy R. ^[2]; Stan, Liliana  ^[3]; Salahuddin, Sayeef ^[2]; Bakaul, Saidur Rahman  ^[4]

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1. Univ. at Buffalo, NY (United States)
2. Univ. of California, Berkeley, CA (United States)
3. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
4. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division

Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO₃/PbZr_0.2Ti_0.8O₃/SrRuO₃ FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (~1×10⁵%) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• Sponsoring Organization: US Department of the Navy, Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: AC02-06CH11357
• OSTI ID: 1603317
• Alternate ID(s): OSTI ID: 1593182
• Journal Information: Applied Physics Letters, Vol. 116, Issue 3; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)Copyright Statement
• Country of Publication: United States
• Language: English