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Title: Tunneling electroresistance effects in epitaxial complex oxides on silicon

Abstract

Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (~1×105%) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3];  [2]; ORCiD logo [4]
  1. Univ. at Buffalo, NY (United States)
  2. Univ. of California, Berkeley, CA (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
US Department of the Navy, Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1603317
Alternate Identifier(s):
OSTI ID: 1593182
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Tunnel junctions; Oxides; C-MOS; Chemical elements; Crystal structure; Tunneling electroresistance; Epitaxy; Nonvolatile memory; Ferroelectric materials; Heterostructures

Citation Formats

Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, and Bakaul, Saidur Rahman. Tunneling electroresistance effects in epitaxial complex oxides on silicon. United States: N. p., 2020. Web. doi:10.1063/1.5133081.
Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, & Bakaul, Saidur Rahman. Tunneling electroresistance effects in epitaxial complex oxides on silicon. United States. doi:https://doi.org/10.1063/1.5133081
Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, and Bakaul, Saidur Rahman. Tue . "Tunneling electroresistance effects in epitaxial complex oxides on silicon". United States. doi:https://doi.org/10.1063/1.5133081. https://www.osti.gov/servlets/purl/1603317.
@article{osti_1603317,
title = {Tunneling electroresistance effects in epitaxial complex oxides on silicon},
author = {Abuwasib, Mohammad and Serrao, Claudy R. and Stan, Liliana and Salahuddin, Sayeef and Bakaul, Saidur Rahman},
abstractNote = {Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (~1×105%) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.},
doi = {10.1063/1.5133081},
journal = {Applied Physics Letters},
number = 3,
volume = 116,
place = {United States},
year = {2020},
month = {1}
}

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