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Title: Tunneling Electroresistance Effects in Epitaxial Complex Oxides on Silicon

Abstract

Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (∼1 × 105%) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
US Department of the Navy, Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1603317
Alternate Identifier(s):
OSTI ID: 1593182
Grant/Contract Number:  
[AC02-06CH11357; BES; AC02- 06CH11357]
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
[ Journal Volume: 116; Journal Issue: 3]
Country of Publication:
United States
Language:
English

Citation Formats

Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, and Bakaul, Saidur Rahman. Tunneling Electroresistance Effects in Epitaxial Complex Oxides on Silicon. United States: N. p., 2020. Web. doi:10.1063/1.5133081.
Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, & Bakaul, Saidur Rahman. Tunneling Electroresistance Effects in Epitaxial Complex Oxides on Silicon. United States. doi:10.1063/1.5133081.
Abuwasib, Mohammad, Serrao, Claudy R., Stan, Liliana, Salahuddin, Sayeef, and Bakaul, Saidur Rahman. Tue . "Tunneling Electroresistance Effects in Epitaxial Complex Oxides on Silicon". United States. doi:10.1063/1.5133081.
@article{osti_1603317,
title = {Tunneling Electroresistance Effects in Epitaxial Complex Oxides on Silicon},
author = {Abuwasib, Mohammad and Serrao, Claudy R. and Stan, Liliana and Salahuddin, Sayeef and Bakaul, Saidur Rahman},
abstractNote = {Complex oxide-based ferroelectric tunnel junctions (FTJs) show excellent nonvolatile memory characteristics promising for emerging technology. However, integration of these epitaxially grown FTJs electrically with a silicon substrate remains challenging due to their incompatible lattice structures and poor electronic interfaces resulting from the direct synthesis techniques. Here, we present an epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3 FTJ integrated electrically with a doped silicon substrate after a layer transfer process. The tunnel currents of the FTJ on silicon show a large tunneling electroresistance (∼1 × 105%) effect, which is explained by a numerical FTJ model incorporating pinned dipoles at the interfaces. This proof of concept of the integration of functional oxide heterostructures with silicon opens a pathway to beyond-CMOS computing devices using unconventional materials.},
doi = {10.1063/1.5133081},
journal = {Applied Physics Letters},
number = [3],
volume = [116],
place = {United States},
year = {2020},
month = {1}
}

Journal Article:
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