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Title: Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors

Abstract

Phosphorene-based field effect transistors are fabricated and are shown to be highly sensitive gas and photodetectors. The sensing mechanism is explained using a Schottky barrier model at the phosphorene/metal contact interface.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1];  [3]; ORCiD logo [2]
  1. Department of Physics and Astronomy, University of Louisville, Louisville, USA
  2. Conn Center for Renewable Energy Research, University of Louisville, Louisville, USA
  3. Department of Physics and Astronomy, University of Louisville, Louisville, USA, Conn Center for Renewable Energy Research
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1602312
Grant/Contract Number:  
SC0019348
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Chemistry Chemical Physics. PCCP (Print)
Additional Journal Information:
Journal Name: Physical Chemistry Chemical Physics. PCCP (Print) Journal Volume: 22 Journal Issue: 10; Journal ID: ISSN 1463-9076
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Rajapakse, Manthila, Anderson, George, Zhang, Congyan, Musa, Rajib, Walter, Jackson, Yu, Ming, Sumanasekera, Gamini, and Jasinski, Jacek B. Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors. United Kingdom: N. p., 2020. Web. doi:10.1039/C9CP06547D.
Rajapakse, Manthila, Anderson, George, Zhang, Congyan, Musa, Rajib, Walter, Jackson, Yu, Ming, Sumanasekera, Gamini, & Jasinski, Jacek B. Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors. United Kingdom. doi:10.1039/C9CP06547D.
Rajapakse, Manthila, Anderson, George, Zhang, Congyan, Musa, Rajib, Walter, Jackson, Yu, Ming, Sumanasekera, Gamini, and Jasinski, Jacek B. Wed . "Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors". United Kingdom. doi:10.1039/C9CP06547D.
@article{osti_1602312,
title = {Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors},
author = {Rajapakse, Manthila and Anderson, George and Zhang, Congyan and Musa, Rajib and Walter, Jackson and Yu, Ming and Sumanasekera, Gamini and Jasinski, Jacek B.},
abstractNote = {Phosphorene-based field effect transistors are fabricated and are shown to be highly sensitive gas and photodetectors. The sensing mechanism is explained using a Schottky barrier model at the phosphorene/metal contact interface.},
doi = {10.1039/C9CP06547D},
journal = {Physical Chemistry Chemical Physics. PCCP (Print)},
number = 10,
volume = 22,
place = {United Kingdom},
year = {2020},
month = {3}
}

Journal Article:
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This content will become publicly available on February 21, 2021
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