Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling
Abstract
Abstract Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.
- Authors:
-
[5]
- National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190 China, CAS Center for Excellence in Topological Quantum Computation and School of Physics University of Chinese Academy of Sciences Beijing 100049 China
- Institute of Science and Technology Austria Am Campus 1 Klosterneuburg 3400 Austria
- Frontier Institute of Science and Technology Xi'an Jiaotong University Xi'an 710054 China
- Department of Physics University of Basel Klingelbergstrasse 82 Basel CH‐4056 Switzerland
- National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190 China, CAS Center for Excellence in Topological Quantum Computation and School of Physics University of Chinese Academy of Sciences Beijing 100049 China, Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China
- National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190 China
- Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China
- Department of Materials Science and Engineering University of Utah Salt Lake City UT 84112 USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1602072
- Alternate Identifier(s):
- OSTI ID: 1602074
- Grant/Contract Number:
- DE‐FG02‐04ER46148
- Resource Type:
- Published Article
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Name: Advanced Materials Journal Volume: 32 Journal Issue: 16; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Gao, Fei, Wang, Jian‐Huan, Watzinger, Hannes, Hu, Hao, Rančić, Marko J., Zhang, Jie‐Yin, Wang, Ting, Yao, Yuan, Wang, Gui‐Lei, Kukučka, Josip, Vukušić, Lada, Kloeffel, Christoph, Loss, Daniel, Liu, Feng, Katsaros, Georgios, and Zhang, Jian‐Jun. Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling. Germany: N. p., 2020.
Web. doi:10.1002/adma.201906523.
Gao, Fei, Wang, Jian‐Huan, Watzinger, Hannes, Hu, Hao, Rančić, Marko J., Zhang, Jie‐Yin, Wang, Ting, Yao, Yuan, Wang, Gui‐Lei, Kukučka, Josip, Vukušić, Lada, Kloeffel, Christoph, Loss, Daniel, Liu, Feng, Katsaros, Georgios, & Zhang, Jian‐Jun. Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling. Germany. https://doi.org/10.1002/adma.201906523
Gao, Fei, Wang, Jian‐Huan, Watzinger, Hannes, Hu, Hao, Rančić, Marko J., Zhang, Jie‐Yin, Wang, Ting, Yao, Yuan, Wang, Gui‐Lei, Kukučka, Josip, Vukušić, Lada, Kloeffel, Christoph, Loss, Daniel, Liu, Feng, Katsaros, Georgios, and Zhang, Jian‐Jun. Thu .
"Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling". Germany. https://doi.org/10.1002/adma.201906523.
@article{osti_1602072,
title = {Site‐Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling},
author = {Gao, Fei and Wang, Jian‐Huan and Watzinger, Hannes and Hu, Hao and Rančić, Marko J. and Zhang, Jie‐Yin and Wang, Ting and Yao, Yuan and Wang, Gui‐Lei and Kukučka, Josip and Vukušić, Lada and Kloeffel, Christoph and Loss, Daniel and Liu, Feng and Katsaros, Georgios and Zhang, Jian‐Jun},
abstractNote = {Abstract Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.},
doi = {10.1002/adma.201906523},
journal = {Advanced Materials},
number = 16,
volume = 32,
place = {Germany},
year = {Thu Feb 27 00:00:00 EST 2020},
month = {Thu Feb 27 00:00:00 EST 2020}
}
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https://doi.org/10.1002/adma.201906523
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