Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping
Abstract
n-type conductivity of β-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of β-Ga2O3 single crystals using UV–vis-NIR absorption and Hall effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze and Czochralski method in mixed Ar + O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in β-Ga2O3 with a measured electron concentration ~2 × 1019 cm-3, mobility 80–65 cm2 V-1 s-1, and resistivity down to 5 mΩ cm in our samples. The concentration of Hf was measured to be 1.3 × 1019 atoms cm-3 using glow discharge mass spectroscopy on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 × 1019 cm-3).
- Authors:
-
- Washington State Univ., Pullman, WA (United States)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Univ. of Utah, Salt Lake City, UT (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1601954
- Report Number(s):
- LLNL-JRNL-793748
Journal ID: ISSN 0268-1242; 993525
- Grant/Contract Number:
- AC52-07NA27344
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Semiconductor Science and Technology
- Additional Journal Information:
- Journal Volume: 35; Journal Issue: 4; Journal ID: ISSN 0268-1242
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Saleh, Muad, Varley, Joel B., Jesenovec, Jani, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Swain, Santosh, and Lynn, Kelvin. Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping. United States: N. p., 2020.
Web. doi:10.1088/1361-6641/ab75a6.
Saleh, Muad, Varley, Joel B., Jesenovec, Jani, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Swain, Santosh, & Lynn, Kelvin. Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping. United States. https://doi.org/10.1088/1361-6641/ab75a6
Saleh, Muad, Varley, Joel B., Jesenovec, Jani, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Swain, Santosh, and Lynn, Kelvin. Thu .
"Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping". United States. https://doi.org/10.1088/1361-6641/ab75a6. https://www.osti.gov/servlets/purl/1601954.
@article{osti_1601954,
title = {Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping},
author = {Saleh, Muad and Varley, Joel B. and Jesenovec, Jani and Bhattacharyya, Arkka and Krishnamoorthy, Sriram and Swain, Santosh and Lynn, Kelvin},
abstractNote = {n-type conductivity of β-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of β-Ga2O3 single crystals using UV–vis-NIR absorption and Hall effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze and Czochralski method in mixed Ar + O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in β-Ga2O3 with a measured electron concentration ~2 × 1019 cm-3, mobility 80–65 cm2 V-1 s-1, and resistivity down to 5 mΩ cm in our samples. The concentration of Hf was measured to be 1.3 × 1019 atoms cm-3 using glow discharge mass spectroscopy on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 × 1019 cm-3).},
doi = {10.1088/1361-6641/ab75a6},
journal = {Semiconductor Science and Technology},
number = 4,
volume = 35,
place = {United States},
year = {2020},
month = {3}
}
Web of Science
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