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Title: Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping

Abstract

n-type conductivity of β-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of β-Ga2O3 single crystals using UV–vis-NIR absorption and Hall effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze and Czochralski method in mixed Ar + O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in β-Ga2O3 with a measured electron concentration ~2 × 1019 cm-3, mobility 80–65 cm2 V-1 s-1, and resistivity down to 5 mΩ cm in our samples. The concentration of Hf was measured to be 1.3 × 1019 atoms cm-3 using glow discharge mass spectroscopy on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 × 1019 cm-3).

Authors:
ORCiD logo [1];  [2];  [1]; ORCiD logo [3]; ORCiD logo [3];  [1];  [1]
+ Show Author Affiliations
  1. Washington State Univ., Pullman, WA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  3. Univ. of Utah, Salt Lake City, UT (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1601954
Report Number(s):
LLNL-JRNL-793748
Journal ID: ISSN 0268-1242; 993525
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Semiconductor Science and Technology
Additional Journal Information:
Journal Volume: 35; Journal Issue: 4; Journal ID: ISSN 0268-1242
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Saleh, Muad, Varley, Joel B., Jesenovec, Jani, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Swain, Santosh, and Lynn, Kelvin. Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping. United States: N. p., 2020. Web. doi:10.1088/1361-6641/ab75a6.
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Saleh, Muad, Varley, Joel B., Jesenovec, Jani, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Swain, Santosh, & Lynn, Kelvin. Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping. United States. doi:https://doi.org/10.1088/1361-6641/ab75a6
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Saleh, Muad, Varley, Joel B., Jesenovec, Jani, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Swain, Santosh, and Lynn, Kelvin. Thu . "Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping". United States. doi:https://doi.org/10.1088/1361-6641/ab75a6. https://www.osti.gov/servlets/purl/1601954.
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@article{osti_1601954,
title = {Degenerate doping in B-Ga2O3 Single Crystals through Hf-doping},
author = {Saleh, Muad and Varley, Joel B. and Jesenovec, Jani and Bhattacharyya, Arkka and Krishnamoorthy, Sriram and Swain, Santosh and Lynn, Kelvin},
abstractNote = {n-type conductivity of β-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of β-Ga2O3 single crystals using UV–vis-NIR absorption and Hall effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze and Czochralski method in mixed Ar + O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in β-Ga2O3 with a measured electron concentration ~2 × 1019 cm-3, mobility 80–65 cm2 V-1 s-1, and resistivity down to 5 mΩ cm in our samples. The concentration of Hf was measured to be 1.3 × 1019 atoms cm-3 using glow discharge mass spectroscopy on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 × 1019 cm-3).},
doi = {10.1088/1361-6641/ab75a6},
journal = {Semiconductor Science and Technology},
number = 4,
volume = 35,
place = {United States},
year = {2020},
month = {3}
}
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DOI:  https://doi.org/10.1088/1361-6641/ab75a6
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