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Title: Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Abstract

The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (104) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 10 8 to 3 × 10 7  cm −2 , determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [2];  [3];  [3];  [3]; ORCiD logo [4]; ORCiD logo [5]; ORCiD logo [1]
+ Show Author Affiliations
  1. Department of Materials Science and Engineering University of California, Los Angeles Los Angeles CA 90095 USA
  2. Adroit Materials, Inc. Apex NC 27518 USA
  3. Department of Material Science and Engineering North Carolina State University Raleigh NC 27606 USA
  4. Institute of High Pressure Physics Polish Academy of Sciences Warsaw 01-142 Poland
  5. Center for Nanoscale Materials Argonne National Laboratory Lemont IL 60439 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1601917
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Name: Physica Status Solidi B. Basic Solid State Physics Journal Volume: 257 Journal Issue: 4; Journal ID: ISSN 0370-1972
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Wang, Yekan, Huynh, Kenny, Liao, Michael E., Yu, Hsuan-Ming, Bai, Tingyu, Tweedie, James, Breckenridge, Mathew Hayden, Collazo, Ramon, Sitar, Zlatko, Bockowski, Michal, Liu, Yuzi, and Goorsky, Mark S.. Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates. Germany: N. p., 2020. Web. doi:10.1002/pssb.201900705.
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Wang, Yekan, Huynh, Kenny, Liao, Michael E., Yu, Hsuan-Ming, Bai, Tingyu, Tweedie, James, Breckenridge, Mathew Hayden, Collazo, Ramon, Sitar, Zlatko, Bockowski, Michal, Liu, Yuzi, & Goorsky, Mark S.. Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates. Germany. https://doi.org/10.1002/pssb.201900705
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Wang, Yekan, Huynh, Kenny, Liao, Michael E., Yu, Hsuan-Ming, Bai, Tingyu, Tweedie, James, Breckenridge, Mathew Hayden, Collazo, Ramon, Sitar, Zlatko, Bockowski, Michal, Liu, Yuzi, and Goorsky, Mark S.. Wed . "Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates". Germany. https://doi.org/10.1002/pssb.201900705.
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@article{osti_1601917,
title = {Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates},
author = {Wang, Yekan and Huynh, Kenny and Liao, Michael E. and Yu, Hsuan-Ming and Bai, Tingyu and Tweedie, James and Breckenridge, Mathew Hayden and Collazo, Ramon and Sitar, Zlatko and Bockowski, Michal and Liu, Yuzi and Goorsky, Mark S.},
abstractNote = {The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (104) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 10 8 to 3 × 10 7  cm −2 , determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.},
doi = {10.1002/pssb.201900705},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = 4,
volume = 257,
place = {Germany},
year = {2020},
month = {2}
}
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https://doi.org/10.1002/pssb.201900705
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