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Title: Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [2];  [3];  [3];  [3]; ORCiD logo [4]; ORCiD logo [5]; ORCiD logo [1]
  1. Department of Materials Science and EngineeringUniversity of California, Los Angeles Los Angeles CA 90095 USA
  2. Adroit Materials, Inc. Apex NC 27518 USA
  3. Department of Material Science and EngineeringNorth Carolina State University Raleigh NC 27606 USA
  4. Institute of High Pressure PhysicsPolish Academy of Sciences Warsaw 01-142 Poland
  5. Center for Nanoscale MaterialsArgonne National Laboratory Lemont IL 60439 USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1601917
Grant/Contract Number:  
[AR0001116]
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
[Journal Name: Physica Status Solidi B. Basic Solid State Physics]; Journal ID: ISSN 0370-1972
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Wang, Yekan, Huynh, Kenny, Liao, Michael E., Yu, Hsuan-Ming, Bai, Tingyu, Tweedie, James, Breckenridge, Mathew Hayden, Collazo, Ramon, Sitar, Zlatko, Bockowski, Michal, Liu, Yuzi, and Goorsky, Mark S. Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates. Germany: N. p., 2020. Web. doi:10.1002/pssb.201900705.
Wang, Yekan, Huynh, Kenny, Liao, Michael E., Yu, Hsuan-Ming, Bai, Tingyu, Tweedie, James, Breckenridge, Mathew Hayden, Collazo, Ramon, Sitar, Zlatko, Bockowski, Michal, Liu, Yuzi, & Goorsky, Mark S. Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates. Germany. doi:10.1002/pssb.201900705.
Wang, Yekan, Huynh, Kenny, Liao, Michael E., Yu, Hsuan-Ming, Bai, Tingyu, Tweedie, James, Breckenridge, Mathew Hayden, Collazo, Ramon, Sitar, Zlatko, Bockowski, Michal, Liu, Yuzi, and Goorsky, Mark S. Wed . "Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates". Germany. doi:10.1002/pssb.201900705.
@article{osti_1601917,
title = {Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates},
author = {Wang, Yekan and Huynh, Kenny and Liao, Michael E. and Yu, Hsuan-Ming and Bai, Tingyu and Tweedie, James and Breckenridge, Mathew Hayden and Collazo, Ramon and Sitar, Zlatko and Bockowski, Michal and Liu, Yuzi and Goorsky, Mark S.},
abstractNote = {},
doi = {10.1002/pssb.201900705},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = ,
volume = ,
place = {Germany},
year = {2020},
month = {2}
}

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This content will become publicly available on February 25, 2021
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