Iridium-related complexes in Czochralski-grown β-Ga 2O3

Ritter, Jacob R.; Lynn, Kelvin G.; McCluskey, Matthew D.

doi:10.1063/1.5129781

Title: Iridium-related complexes in Czochralski-grown β-Ga ₂O₃

Abstract

Gallium oxide is a promising semiconductor for its potential as a material in the field of power electronics. The effects of iridium impurities on undoped, Mg-doped, and Ca-doped gallium oxides were investigated with IR spectroscopy. In undoped and Ca-doped β-Ga₂O₃, IR peaks at 3313, 3450, and 3500 cm^-1 are tentatively assigned to O–H bond-stretching modes of IrH complexes. Mg-, Ca-, and Fe-doped samples show an Ir⁴⁺ electronic transition feature at 5148 cm^-1. By measuring the strength of this feature vs photoexcitation, the Ir^3+/4+ donor level was determined to lie 2.2–2.3 eV below the conduction band minimum. Ga₂O₃:Mg also has a range of sidebands between 5100 and 5200 cm^-1, attributed to IrMg pairs. Polarized IR measurements show that the 5248 cm^-1 peak is anisotropic, weakest for light polarized along the c axis, consistent with Lenyk et al. [J. Appl. Phys. 125, 045703 (2019)].

Authors:

Ritter, Jacob R. ^[1];

^[1];

^[1]

Washington State Univ., Pullman, WA (United States)

Publication Date:: 2019-12-14

Research Org.:: Washington State Univ., Pullman, WA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

OSTI Identifier:: 1601481

Alternate Identifier(s):: OSTI ID: 1579390

Grant/Contract Number:: FG02-07ER46386

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 126; Journal Issue: 22; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Ritter, Jacob R., Lynn, Kelvin G., and McCluskey, Matthew D. Iridium-related complexes in Czochralski-grown β-Ga 2O3.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5129781.

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                    Ritter, Jacob R., Lynn, Kelvin G., & McCluskey, Matthew D. Iridium-related complexes in Czochralski-grown β-Ga 2O3.  United States.  https://doi.org/10.1063/1.5129781

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                    Ritter, Jacob R., Lynn, Kelvin G., and McCluskey, Matthew D. Sat .  
"Iridium-related complexes in Czochralski-grown β-Ga 2O3".  United States.  https://doi.org/10.1063/1.5129781.  https://www.osti.gov/servlets/purl/1601481.

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@article{osti_1601481,

  title        = {Iridium-related complexes in Czochralski-grown β-Ga 2O3},

  author       = {Ritter, Jacob R. and Lynn, Kelvin G. and McCluskey, Matthew D.},

  abstractNote = {Gallium oxide is a promising semiconductor for its potential as a material in the field of power electronics. The effects of iridium impurities on undoped, Mg-doped, and Ca-doped gallium oxides were investigated with IR spectroscopy. In undoped and Ca-doped β-Ga2O3, IR peaks at 3313, 3450, and 3500 cm-1 are tentatively assigned to O–H bond-stretching modes of IrH complexes. Mg-, Ca-, and Fe-doped samples show an Ir4+ electronic transition feature at 5148 cm-1. By measuring the strength of this feature vs photoexcitation, the Ir3+/4+ donor level was determined to lie 2.2–2.3 eV below the conduction band minimum. Ga2O3:Mg also has a range of sidebands between 5100 and 5200 cm-1, attributed to IrMg pairs. Polarized IR measurements show that the 5248 cm-1 peak is anisotropic, weakest for light polarized along the c axis, consistent with Lenyk et al. [J. Appl. Phys. 125, 045703 (2019)].},

  doi          = {10.1063/1.5129781},

  journal      = {Journal of Applied Physics},

  number       = 22,

  volume       = 126,

  place        = {United States},

  year         = {2019},

  month        = {12}

}

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Works referencing / citing this record:

Optical transitions for impurities in Ga ₂ O ₃ as determined by photo-induced electron paramagnetic resonance spectroscopy
journal, February 2020

Bhandari, Suman; Zvanut, M. E.
Journal of Applied Physics, Vol. 127, Issue 6
DOI: 10.1063/1.5140193

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Title: Iridium-related complexes in Czochralski-grown β-Ga 2O3

Abstract

Citation Formats

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy journal, February 2012

Large-size β-Ga2O3 single crystals and wafers journal, October 2004

Iron and intrinsic deep level states in Ga 2 O 3 journal, January 2018

Infrared absorption and magnetic circular dichroism of Cs2ZrCl6:Ir4+ journal, December 1975

Scaling-Up of Bulk β-Ga 2 O 3 Single Crystals by the Czochralski Method journal, September 2016

Structure and vibrational properties of the dominant O-H center in β-Ga 2 O 3 journal, June 2018

Ir 4+ ions in β-Ga 2 O 3 crystals: An unintentional deep donor journal, January 2019

Development of gallium oxide power devices: Development of gallium oxide power devices journal, November 2013

On the bulk β-Ga2O3 single crystals grown by the Czochralski method journal, October 2014

Electron paramagnetic resonance study of neutral Mg acceptors in β-Ga 2 O 3 crystals journal, August 2017

Local-Vibrational-Mode Absorption of Two O-H Centres in GaP journal, December 1998

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Anisotropy of electrical and optical properties in β-Ga2O3 single crystals journal, August 1997

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Paramagnetic resonance and near-infrared optical absorption of SrTiO 3 :Ir 4+ journal, March 1984

Correlation between blue luminescence intensity and resistivity in β -Ga 2 O 3 single crystals journal, July 2013

Optical Absorption, Fluorescence, and Electron Spin Resonance of Ir4+ on Octahedral Sites in Y3Ga5O12 journal, February 1976

Electrical properties of β -Ga 2 O 3 single crystals grown by the Czochralski method journal, September 2011

Optical transitions for impurities in Ga 2 O 3 as determined by photo-induced electron paramagnetic resonance spectroscopy journal, February 2020

Title: Iridium-related complexes in Czochralski-grown β-Ga ₂O₃

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
journal, February 2012

Large-size β-Ga2O3 single crystals and wafers
journal, October 2004

Iron and intrinsic deep level states in Ga ₂ O ₃
journal, January 2018

Infrared absorption and magnetic circular dichroism of Cs2ZrCl6:Ir4+
journal, December 1975

Scaling-Up of Bulk β-Ga ₂ O ₃ Single Crystals by the Czochralski Method
journal, September 2016

Structure and vibrational properties of the dominant O-H center in β-Ga ₂ O ₃
journal, June 2018

Ir ⁴⁺ ions in β-Ga ₂ O ₃ crystals: An unintentional deep donor
journal, January 2019

Development of gallium oxide power devices: Development of gallium oxide power devices
journal, November 2013

On the bulk β-Ga2O3 single crystals grown by the Czochralski method
journal, October 2014

Electron paramagnetic resonance study of neutral Mg acceptors in β-Ga ₂ O ₃ crystals
journal, August 2017

Local-Vibrational-Mode Absorption of Two O-H Centres in GaP
journal, December 1998

Infrared spectroscopy of hydrogen in ZnO
journal, November 2002

Crystal Structure of β‐Ga ₂ O ₃
journal, September 1960

Anisotropy of electrical and optical properties in β-Ga2O3 single crystals
journal, August 1997

Hydrogen passivation of calcium and magnesium doped [beta]-Ga2O3
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Compensation and hydrogen passivation of magnesium acceptors in β-Ga ₂ O ₃
journal, July 2018

Paramagnetic resonance and near-infrared optical absorption of SrTiO ₃ :Ir ⁴⁺
journal, March 1984

Correlation between blue luminescence intensity and resistivity in β -Ga ₂ O ₃ single crystals
journal, July 2013

Optical Absorption, Fluorescence, and Electron Spin Resonance of Ir4+ on Octahedral Sites in Y3Ga5O12
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