Iridium-related complexes in Czochralski-grown β-Ga 2O3

Ritter, Jacob R.; Lynn, Kelvin G.; McCluskey, Matthew D.

doi:10.1063/1.5129781

Title: Iridium-related complexes in Czochralski-grown β-Ga ₂O₃

Journal Article · 14 December 2019 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5129781 · OSTI ID:1601481

Ritter, Jacob R. ^[1];

^[1];

^[1]

Washington State Univ., Pullman, WA (United States)

Gallium oxide is a promising semiconductor for its potential as a material in the field of power electronics. The effects of iridium impurities on undoped, Mg-doped, and Ca-doped gallium oxides were investigated with IR spectroscopy. In undoped and Ca-doped β-Ga₂O₃, IR peaks at 3313, 3450, and 3500 cm^-1 are tentatively assigned to O–H bond-stretching modes of IrH complexes. Mg-, Ca-, and Fe-doped samples show an Ir⁴⁺ electronic transition feature at 5148 cm^-1. By measuring the strength of this feature vs photoexcitation, the Ir^3+/4+ donor level was determined to lie 2.2–2.3 eV below the conduction band minimum. Ga₂O₃:Mg also has a range of sidebands between 5100 and 5200 cm^-1, attributed to IrMg pairs. Polarized IR measurements show that the 5248 cm^-1 peak is anisotropic, weakest for light polarized along the c axis, consistent with Lenyk et al. [J. Appl. Phys. 125, 045703 (2019)].

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Research Organization:: Washington State Univ., Pullman, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46386

OSTI ID:: 1601481

Alternate ID(s):: OSTI ID: 1579390

Journal Information:: Journal of Applied Physics, Vol. 126, Issue 22; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 31 works

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