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Title: Iridium-related complexes in Czochralski-grown β-Ga 2O3

Abstract

Gallium oxide is a promising semiconductor for its potential as a material in the field of power electronics. The effects of iridium impurities on undoped, Mg-doped, and Ca-doped gallium oxides were investigated with IR spectroscopy. In undoped and Ca-doped β-Ga2O3, IR peaks at 3313, 3450, and 3500 cm-1 are tentatively assigned to O–H bond-stretching modes of IrH complexes. Mg-, Ca-, and Fe-doped samples show an Ir4+ electronic transition feature at 5148 cm-1. By measuring the strength of this feature vs photoexcitation, the Ir3+/4+ donor level was determined to lie 2.2–2.3 eV below the conduction band minimum. Ga2O3:Mg also has a range of sidebands between 5100 and 5200 cm-1, attributed to IrMg pairs. Polarized IR measurements show that the 5248 cm-1 peak is anisotropic, weakest for light polarized along the c axis, consistent with Lenyk et al. [J. Appl. Phys. 125, 045703 (2019)].

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Washington State Univ., Pullman, WA (United States)
Publication Date:
Research Org.:
Washington State Univ., Pullman, WA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1601481
Alternate Identifier(s):
OSTI ID: 1579390
Grant/Contract Number:  
FG02-07ER46386
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 22; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ritter, Jacob R., Lynn, Kelvin G., and McCluskey, Matthew D. Iridium-related complexes in Czochralski-grown β-Ga 2O3. United States: N. p., 2019. Web. doi:10.1063/1.5129781.
Ritter, Jacob R., Lynn, Kelvin G., & McCluskey, Matthew D. Iridium-related complexes in Czochralski-grown β-Ga 2O3. United States. doi:https://doi.org/10.1063/1.5129781
Ritter, Jacob R., Lynn, Kelvin G., and McCluskey, Matthew D. Sat . "Iridium-related complexes in Czochralski-grown β-Ga 2O3". United States. doi:https://doi.org/10.1063/1.5129781. https://www.osti.gov/servlets/purl/1601481.
@article{osti_1601481,
title = {Iridium-related complexes in Czochralski-grown β-Ga 2O3},
author = {Ritter, Jacob R. and Lynn, Kelvin G. and McCluskey, Matthew D.},
abstractNote = {Gallium oxide is a promising semiconductor for its potential as a material in the field of power electronics. The effects of iridium impurities on undoped, Mg-doped, and Ca-doped gallium oxides were investigated with IR spectroscopy. In undoped and Ca-doped β-Ga2O3, IR peaks at 3313, 3450, and 3500 cm-1 are tentatively assigned to O–H bond-stretching modes of IrH complexes. Mg-, Ca-, and Fe-doped samples show an Ir4+ electronic transition feature at 5148 cm-1. By measuring the strength of this feature vs photoexcitation, the Ir3+/4+ donor level was determined to lie 2.2–2.3 eV below the conduction band minimum. Ga2O3:Mg also has a range of sidebands between 5100 and 5200 cm-1, attributed to IrMg pairs. Polarized IR measurements show that the 5248 cm-1 peak is anisotropic, weakest for light polarized along the c axis, consistent with Lenyk et al. [J. Appl. Phys. 125, 045703 (2019)].},
doi = {10.1063/1.5129781},
journal = {Journal of Applied Physics},
number = 22,
volume = 126,
place = {United States},
year = {2019},
month = {12}
}

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    Works referencing / citing this record:

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