Thermoelectric transport of the half-filled lowest Landau level in a p -type Ge/SiGe heterostructure

Liu, Xiaoxue; Lu, Tzu-Ming; Harris, Charles Thomas; Lu, Fang-Liang; Liu, Chia-You; Li, Jiun-Yun; Liu, Chee Wee; Du, Rui-Rui

doi:10.1103/PhysRevB.101.075304

Title: Thermoelectric transport of the half-filled lowest Landau level in a $p$ -type Ge/SiGe heterostructure

Journal Article · 12 February 2020 · Physical Review B

DOI: https://doi.org/10.1103/PhysRevB.101.075304 · OSTI ID:1601273

Liu, Xiaoxue ^[1]; Lu, Tzu-Ming ^[2]; Harris, Charles Thomas ^[2]; Lu, Fang-Liang ^[3]; Liu, Chia-You ^[3]; Li, Jiun-Yun ^[3]; Liu, Chee Wee ^[3]; Du, Rui-Rui ^[1]

Rice Univ., Houston, TX (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT)
National Taiwan Univ., Taipei, Taiwan (Republic of China); National Nano Device Lab., Hsinchu, Taiwan (Republic of China)

In this work, we investigate the thermoelectric transport properties of the half-filled lowest Landau level $v = 1 / 2$ in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower ${S_{x x}}^{d}$ at $v = 1 / 2$ shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal ${S_{x y}}^{d}$ of $v = 1 / 2$ is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field).

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Welch Foundation; USDOE National Nuclear Security Administration (NNSA); Ministry of Science and Technology (Taiwan); Ministry of Education (Taiwan)

Grant/Contract Number:: AC04-94AL85000; DMR-1508644; C-1682; NA0003525; 106-2112-M-002-009-; 107-2218-E-002-044; 107-2622-8-002-018; NTU-CC-108L891701; NTU-07L7818; NTU-107L891702

OSTI ID:: 1601273

Alternate ID(s):: OSTI ID: 1599513

Report Number(s):: SAND-2020-1875J; PRBMDO; 683891; TRN: US2103623

Journal Information:: Physical Review B, Vol. 101, Issue 7; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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