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Title: On quantum-dot lasing at gain peak with linewidth enhancement factor $α$ H = 0

Abstract

This paper describes an investigation of the linewidth enhancement factor α H in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing α H. In particular, the feasibility of lasing at the gain peak with α H = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.

Authors:
 [1]; ORCiD logo [2];  [2]; ORCiD logo [2];  [2]
+ Show Author Affiliations
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); US Army Space and Missile Defense Command (USASMDC); Directed Energy Joint Transition Office (DE-JTO); USDOE Office of Science (SC)
OSTI Identifier:
1601268
Alternate Identifier(s):
OSTI ID: 1597122
Report Number(s):
[SAND-2020-1617J]
[Journal ID: ISSN 2378-0967; 683703]
Grant/Contract Number:  
[AC04-94AL85000; AR000067; NA0003525; 214971]
Resource Type:
Accepted Manuscript
Journal Name:
APL Photonics
Additional Journal Information:
[ Journal Volume: 5; Journal Issue: 2]; Journal ID: ISSN 2378-0967
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Chow, Weng W., Zhang, Zeyu, Norman, Justin C., Liu, Songtao, and Bowers, John E. On quantum-dot lasing at gain peak with linewidth enhancement factor $α$H = 0. United States: N. p., 2020. Web. doi:10.1063/1.5133075.
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Chow, Weng W., Zhang, Zeyu, Norman, Justin C., Liu, Songtao, & Bowers, John E. On quantum-dot lasing at gain peak with linewidth enhancement factor $α$H = 0. United States. doi:10.1063/1.5133075.
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Chow, Weng W., Zhang, Zeyu, Norman, Justin C., Liu, Songtao, and Bowers, John E. Mon . "On quantum-dot lasing at gain peak with linewidth enhancement factor $α$H = 0". United States. doi:10.1063/1.5133075. https://www.osti.gov/servlets/purl/1601268.
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@article{osti_1601268,
title = {On quantum-dot lasing at gain peak with linewidth enhancement factor $α$H = 0},
author = {Chow, Weng W. and Zhang, Zeyu and Norman, Justin C. and Liu, Songtao and Bowers, John E.},
abstractNote = {This paper describes an investigation of the linewidth enhancement factor αH in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing αH. In particular, the feasibility of lasing at the gain peak with αH = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.},
doi = {10.1063/1.5133075},
journal = {APL Photonics},
number = [2],
volume = [5],
place = {United States},
year = {2020},
month = {2}
}
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Journal Article:
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DOI:  10.1063/1.5133075
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