On quantum-dot lasing at gain peak with linewidth enhancement factor $$α$$H = 0
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. of California, Santa Barbara, CA (United States)
This paper describes an investigation of the linewidth enhancement factor αH in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing αH. In particular, the feasibility of lasing at the gain peak with αH = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E); US Army Space and Missile Defense Command (USASMDC); Directed Energy Joint Transition Office (DE-JTO); USDOE Office of Science (SC)
- Grant/Contract Number:
- AC04-94AL85000; AR000067; NA0003525; 214971
- OSTI ID:
- 1601268
- Alternate ID(s):
- OSTI ID: 1597122
- Report Number(s):
- SAND-2020-1617J; 683703; TRN: US2103776
- Journal Information:
- APL Photonics, Vol. 5, Issue 2; ISSN 2378-0967
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 15 works
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