On quantum-dot lasing at gain peak with linewidth enhancement factor $α$H = 0

Chow, Weng W.; Zhang, Zeyu; Norman, Justin C.; Liu, Songtao; Bowers, John E.

doi:10.1063/1.5133075

Title: On quantum-dot lasing at gain peak with linewidth enhancement factor $$α$$_H = 0

Abstract

This paper describes an investigation of the linewidth enhancement factor α_H in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing α_H. In particular, the feasibility of lasing at the gain peak with α_H = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.

Authors:

Chow, Weng W. ^[1];

^[2]; Norman, Justin C. ^[2];

^[2]; Bowers, John E. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of California, Santa Barbara, CA (United States)

Publication Date:: 2020-02-03

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); US Army Space and Missile Defense Command (USASMDC); Directed Energy Joint Transition Office (DE-JTO); USDOE Office of Science (SC)

OSTI Identifier:: 1601268

Alternate Identifier(s):: OSTI ID: 1597122

Report Number(s):: SAND-2020-1617J
Journal ID: ISSN 2378-0967; 683703; TRN: US2103776

Grant/Contract Number:: AC04-94AL85000; AR000067; NA0003525; 214971

Resource Type:: Accepted Manuscript

Journal Name:: APL Photonics

Additional Journal Information:: Journal Volume: 5; Journal Issue: 2; Journal ID: ISSN 2378-0967

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Chow, Weng W., Zhang, Zeyu, Norman, Justin C., Liu, Songtao, and Bowers, John E. On quantum-dot lasing at gain peak with linewidth enhancement factor $α$H = 0.  United States: N. p., 2020. 
Web.  doi:10.1063/1.5133075.

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                    Chow, Weng W., Zhang, Zeyu, Norman, Justin C., Liu, Songtao, & Bowers, John E. On quantum-dot lasing at gain peak with linewidth enhancement factor $α$H = 0.  United States.  https://doi.org/10.1063/1.5133075

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                    Chow, Weng W., Zhang, Zeyu, Norman, Justin C., Liu, Songtao, and Bowers, John E. Mon .  
"On quantum-dot lasing at gain peak with linewidth enhancement factor $α$H = 0".  United States.  https://doi.org/10.1063/1.5133075.  https://www.osti.gov/servlets/purl/1601268.

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@article{osti_1601268,

  title        = {On quantum-dot lasing at gain peak with linewidth enhancement factor $α$H = 0},

  author       = {Chow, Weng W. and Zhang, Zeyu and Norman, Justin C. and Liu, Songtao and Bowers, John E.},

  abstractNote = {This paper describes an investigation of the linewidth enhancement factor αH in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing αH. In particular, the feasibility of lasing at the gain peak with αH = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.},

  doi          = {10.1063/1.5133075},

  journal      = {APL Photonics},

  number       = 2,

  volume       = 5,

  place        = {United States},

  year         = {2020},

  month        = {2}

}

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Title: On quantum-dot lasing at gain peak with linewidth enhancement factor $$α$$H = 0

Abstract

Citation Formats

High-speed modulation of semiconductor lasers journal, December 1985

Regimes of feedback effects in 1.5-µm distributed feedback lasers journal, January 1986

Excitation-induced dephasing in semiconductor quantum dots journal, December 2004

High-speed modulation of semiconductor lasers journal, January 1985

Anomalous carrier-induced dispersion in quantum-dot active media journal, July 2002

Fundamental line broadening of single‐mode (GaAl)As diode lasers journal, April 1981

Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. II. Experiment journal, January 1990

Multidimensional quantum well laser and temperature dependence of its threshold current journal, June 1982

Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers journal, June 1980

Quantum dot lasers for silicon photonics [Invited] journal, January 2015

The role of auger recombination in inas 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure journal, September 2003

Room temperature lasing from InGaAs quantum dots journal, January 1996

On the physics of semiconductor quantum dots for applications in lasers and quantum optics journal, May 2013

Large linewidth reduction in semiconductor lasers based on atom-like gain material journal, January 2019

Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor journal, June 2018

Polarons in semiconductor quantum dots and their role in the quantum kinetics of carrier relaxation journal, March 2005

Chirped multiple InAs quantum dot structure for wide spectrum device applications journal, May 2005

Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers journal, October 2015

Excitation dependences of gain and carrier-induced refractive index change in quantum-dot lasers journal, January 2007

Nature of wavelength chirping in directly modulated semiconductor lasers journal, January 1984

Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications journal, November 2019

Filamentation and linewidth enhancement factor In InGaAs quantum dot lasers conference, January 2001

Effects of modulation p doping in InAs quantum dot lasers on silicon journal, August 2018

External optical feedback effects on semiconductor injection laser properties journal, March 1980

Low threshold, large To injection laser emission from (InGa)As quantum dots journal, August 1994

Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers journal, October 2002

Quantum dots: promises and accomplishments journal, September 2011

A Review of High-Performance Quantum Dot Lasers on Silicon journal, April 2019

1.3- $\mu$ m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon journal, March 2019

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure journal, March 2003

Technique for measurement of the gain spectra of semiconductor diode lasers journal, December 1984

Observations of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operation journal, August 1977

Theory of the linewidth of semiconductor lasers journal, February 1982

Many-body effects in the gain spectra of highly excited quantum-dot lasers journal, August 2001

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors journal, December 2000

Semiclassical theory of noise in semiconductor lasers - Part II journal, June 1983

Polarons in semiconductor quantum-dots and their role in the quantum kinetics of carrier relaxation text, January 2004

Title: On quantum-dot lasing at gain peak with linewidth enhancement factor $$α$$_H = 0

High-speed modulation of semiconductor lasers
journal, December 1985

Regimes of feedback effects in 1.5-µm distributed feedback lasers
journal, January 1986

Excitation-induced dephasing in semiconductor quantum dots
journal, December 2004

High-speed modulation of semiconductor lasers
journal, January 1985

Anomalous carrier-induced dispersion in quantum-dot active media
journal, July 2002

Fundamental line broadening of single‐mode (GaAl)As diode lasers
journal, April 1981

Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. II. Experiment
journal, January 1990

Multidimensional quantum well laser and temperature dependence of its threshold current
journal, June 1982

Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers
journal, June 1980

Quantum dot lasers for silicon photonics [Invited]
journal, January 2015

The role of auger recombination in inas 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure
journal, September 2003

Room temperature lasing from InGaAs quantum dots
journal, January 1996

On the physics of semiconductor quantum dots for applications in lasers and quantum optics
journal, May 2013

Large linewidth reduction in semiconductor lasers based on atom-like gain material
journal, January 2019

Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor
journal, June 2018

Polarons in semiconductor quantum dots and their role in the quantum kinetics of carrier relaxation
journal, March 2005

Chirped multiple InAs quantum dot structure for wide spectrum device applications
journal, May 2005

Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers
journal, October 2015

Excitation dependences of gain and carrier-induced refractive index change in quantum-dot lasers
journal, January 2007

Nature of wavelength chirping in directly modulated semiconductor lasers
journal, January 1984

Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications
journal, November 2019

Filamentation and linewidth enhancement factor In InGaAs quantum dot lasers
conference, January 2001

Effects of modulation p doping in InAs quantum dot lasers on silicon
journal, August 2018

External optical feedback effects on semiconductor injection laser properties
journal, March 1980

Low threshold, large To injection laser emission from (InGa)As quantum dots
journal, August 1994

Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers
journal, October 2002

Quantum dots: promises and accomplishments
journal, September 2011

A Review of High-Performance Quantum Dot Lasers on Silicon
journal, April 2019

1.3- $\mu$ m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon
journal, March 2019

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure
journal, March 2003

Technique for measurement of the gain spectra of semiconductor diode lasers
journal, December 1984

Observations of self-focusing in stripe geometry semiconductor lasers and the development of a comprehensive model of their operation
journal, August 1977

Theory of the linewidth of semiconductor lasers
journal, February 1982

Many-body effects in the gain spectra of highly excited quantum-dot lasers
journal, August 2001

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
journal, December 2000

Semiclassical theory of noise in semiconductor lasers - Part II
journal, June 1983

Polarons in semiconductor quantum-dots and their role in the quantum kinetics of carrier relaxation
text, January 2004