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Title: On quantum-dot lasing at gain peak with linewidth enhancement factor $$α$$H = 0

Journal Article · · APL Photonics
DOI: https://doi.org/10.1063/1.5133075 · OSTI ID:1601268

This paper describes an investigation of the linewidth enhancement factor αH in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing αH. In particular, the feasibility of lasing at the gain peak with αH = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); US Army Space and Missile Defense Command (USASMDC); Directed Energy Joint Transition Office (DE-JTO); USDOE Office of Science (SC)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1601268
Report Number(s):
SAND--2020-1617J; 683703
Journal Information:
APL Photonics, Journal Name: APL Photonics Journal Issue: 2 Vol. 5; ISSN 2378-0967
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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