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Title: Epitaxial Regrowth and Hole Shape Engineering for Photonic Crystal Surface Emitting Lasers (PCSELs)

Abstract

In the present research, epitaxial regrowth by molecular beam epitaxy (MBE) is investigated as a fabrication process for void-semiconductor photonic crystal (PhC) surface emitting lasers (PCSELs). The PhC is patterned by electron beam lithography (EBL) and inductively coupled plasma (ICP) etch and is subsequently regrown by molecular beam epitaxy to embed a series of voids in bulk semiconductor. Experiments are conducted to investigate the effects of regrowth on air-hole morphology. The resulting voids have a distinct teardrop shape with the radius and depth of the etched hole playing a very critical role in the final regrown void’s dimensions. We demonstrate that specific hole diameters can encourage deposition to the bottom of the voids or to their sidewalls, allowing us to engineer the shape of the void more precisely as is required by the PCSEL design. A 980 nm InGaAs quantum well laser structure is optimized for low threshold lasing at the design wavelength and full device structures are patterned and regrown. An optically pumped PCSEL is demonstrated from this process.

Authors:
 [1];  [2];  [2];  [3];  [1];  [2];  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials (CHTM)
  2. Univ. of Texas, Arlington, TX (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1601262
Alternate Identifier(s):
OSTI ID: 1601492
Report Number(s):
SAND2020-1361J
Journal ID: ISSN 0022-0248; 683615
Grant/Contract Number:  
AC04-94AL85000; NA-0003525
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 535; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Nanostructures; Molecular beam epitaxy; Semiconducting gallium arsenide; Laser diodes

Citation Formats

Reilly, Kevin, Kalapala, Akhil, Yeom, Seuongwon, Addamane, Sadhvikas Jayachandra, Renteria, Emma, Zhou, Weidong, and Balakrishnan, Ganesh. Epitaxial Regrowth and Hole Shape Engineering for Photonic Crystal Surface Emitting Lasers (PCSELs). United States: N. p., 2020. Web. https://doi.org/10.1016/j.jcrysgro.2020.125531.
Reilly, Kevin, Kalapala, Akhil, Yeom, Seuongwon, Addamane, Sadhvikas Jayachandra, Renteria, Emma, Zhou, Weidong, & Balakrishnan, Ganesh. Epitaxial Regrowth and Hole Shape Engineering for Photonic Crystal Surface Emitting Lasers (PCSELs). United States. https://doi.org/10.1016/j.jcrysgro.2020.125531
Reilly, Kevin, Kalapala, Akhil, Yeom, Seuongwon, Addamane, Sadhvikas Jayachandra, Renteria, Emma, Zhou, Weidong, and Balakrishnan, Ganesh. Mon . "Epitaxial Regrowth and Hole Shape Engineering for Photonic Crystal Surface Emitting Lasers (PCSELs)". United States. https://doi.org/10.1016/j.jcrysgro.2020.125531. https://www.osti.gov/servlets/purl/1601262.
@article{osti_1601262,
title = {Epitaxial Regrowth and Hole Shape Engineering for Photonic Crystal Surface Emitting Lasers (PCSELs)},
author = {Reilly, Kevin and Kalapala, Akhil and Yeom, Seuongwon and Addamane, Sadhvikas Jayachandra and Renteria, Emma and Zhou, Weidong and Balakrishnan, Ganesh},
abstractNote = {In the present research, epitaxial regrowth by molecular beam epitaxy (MBE) is investigated as a fabrication process for void-semiconductor photonic crystal (PhC) surface emitting lasers (PCSELs). The PhC is patterned by electron beam lithography (EBL) and inductively coupled plasma (ICP) etch and is subsequently regrown by molecular beam epitaxy to embed a series of voids in bulk semiconductor. Experiments are conducted to investigate the effects of regrowth on air-hole morphology. The resulting voids have a distinct teardrop shape with the radius and depth of the etched hole playing a very critical role in the final regrown void’s dimensions. We demonstrate that specific hole diameters can encourage deposition to the bottom of the voids or to their sidewalls, allowing us to engineer the shape of the void more precisely as is required by the PCSEL design. A 980 nm InGaAs quantum well laser structure is optimized for low threshold lasing at the design wavelength and full device structures are patterned and regrown. An optically pumped PCSEL is demonstrated from this process.},
doi = {10.1016/j.jcrysgro.2020.125531},
journal = {Journal of Crystal Growth},
number = C,
volume = 535,
place = {United States},
year = {2020},
month = {1}
}

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