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Title: Transport studies in a gate-tunable three-terminal Josephson junction

Abstract

Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically protected quantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase and voltage bias. Although conventional, two-terminal Josephson junctions have been studied extensively, multiterminal devices have received relatively little attention to date. Motivated in part by the possibility to ultimately observe topological phenomena in multiterminal Josephson devices, as well as their potential for coupling gatemon qubits, here we describe the superconducting features of a top-gated mesoscopic three-terminal Josephson device. The device is based on an InAs two-dimensional electron gas proximitized by epitaxial aluminum. We map out the transport properties of the device as a function of bias currents, top gate voltage, and magnetic field. Finally, we find a very good agreement between the zero-field experimental phase diagram and a resistively and capacitively shunted junction computational model.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [1]
  1. Univ. of Minnesota, Minneapolis, MN (United States)
  2. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Univ. of Minnesota, Minneapolis, MN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
OSTI Identifier:
1601233
Alternate Identifier(s):
OSTI ID: 1601702
Grant/Contract Number:  
SC0019274; DMR-1554609; ECCS-1542202
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 101; Journal Issue: 5; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Josephson effect; mesoscopics; superconductivity; transport phenomena; devices; III-V semiconductors; Josephson junctions; narrow band gap systems; quantum wells; topological materials; two-dimensional electron system; dilutoin refrigerator; evaporation; lithography; molecular beam epitaxy; resistivity measurements

Citation Formats

Graziano, Gino V., Lee, Joon Sue, Pendharkar, Mihir, Palmstrøm, Chris J., and Pribiag, Vlad S. Transport studies in a gate-tunable three-terminal Josephson junction. United States: N. p., 2020. Web. doi:10.1103/PhysRevB.101.054510.
Graziano, Gino V., Lee, Joon Sue, Pendharkar, Mihir, Palmstrøm, Chris J., & Pribiag, Vlad S. Transport studies in a gate-tunable three-terminal Josephson junction. United States. doi:https://doi.org/10.1103/PhysRevB.101.054510
Graziano, Gino V., Lee, Joon Sue, Pendharkar, Mihir, Palmstrøm, Chris J., and Pribiag, Vlad S. Mon . "Transport studies in a gate-tunable three-terminal Josephson junction". United States. doi:https://doi.org/10.1103/PhysRevB.101.054510. https://www.osti.gov/servlets/purl/1601233.
@article{osti_1601233,
title = {Transport studies in a gate-tunable three-terminal Josephson junction},
author = {Graziano, Gino V. and Lee, Joon Sue and Pendharkar, Mihir and Palmstrøm, Chris J. and Pribiag, Vlad S.},
abstractNote = {Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically protected quantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase and voltage bias. Although conventional, two-terminal Josephson junctions have been studied extensively, multiterminal devices have received relatively little attention to date. Motivated in part by the possibility to ultimately observe topological phenomena in multiterminal Josephson devices, as well as their potential for coupling gatemon qubits, here we describe the superconducting features of a top-gated mesoscopic three-terminal Josephson device. The device is based on an InAs two-dimensional electron gas proximitized by epitaxial aluminum. We map out the transport properties of the device as a function of bias currents, top gate voltage, and magnetic field. Finally, we find a very good agreement between the zero-field experimental phase diagram and a resistively and capacitively shunted junction computational model.},
doi = {10.1103/PhysRevB.101.054510},
journal = {Physical Review B},
number = 5,
volume = 101,
place = {United States},
year = {2020},
month = {2}
}

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