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Title: Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors

Abstract

A general problem for semiconductor applications is that very slow deposition on expensive single-crystal substrates yields high crystalline quality with excellent electro-optical properties, but at prohibitive costs and throughput for many applications. In contrast, rapid deposition on inexpensive substrates or nanocrystalline films yields low costs, but comparatively inferior crystallinity, carrier transport, and recombination. Here, we present methods to deposit single-crystal material at rates 2-3 orders of magnitude faster than state-of-the-art epitaxy with low-cost methods without compromising crystalline or electro-optical quality. For example, single-crystal CdTe and CdZnTe films that would take several days to grow by molecular-beam epitaxy are deposited in 8 minutes by close-spaced sublimation, yet retain the same crystalline quality measured by X-ray diffraction rocking curves. The fast deposition is coupled with effective n- and p-type in-situ doping by In, P, and As. The epitaxy can be extended to nanocrystalline substrates. For example, we recrystallize thin CdTe films on glass to deposit large grains with low defect density. The results provide new research paths for photovoltaics, detectors, infrared imaging, flexible electronics, and other applications.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1600908
Report Number(s):
[NREL/JA-5K00-72302]
[Journal ID: ISSN 2045-2322]
Grant/Contract Number:  
[AC36-08GO28308]
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
[ Journal Volume: 10; Journal Issue: 1]; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CdTe; crystal growth; epitaxy; photovoltaics

Citation Formats

Colegrove, Eric M, Albin, David S, Moutinho, Helio R, Amarasinghe, Mahisha, Burst, James M, and Metzger, Wyatt K. Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors. United States: N. p., 2020. Web. doi:10.1038/s41598-020-59083-3.
Colegrove, Eric M, Albin, David S, Moutinho, Helio R, Amarasinghe, Mahisha, Burst, James M, & Metzger, Wyatt K. Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors. United States. doi:10.1038/s41598-020-59083-3.
Colegrove, Eric M, Albin, David S, Moutinho, Helio R, Amarasinghe, Mahisha, Burst, James M, and Metzger, Wyatt K. Wed . "Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors". United States. doi:10.1038/s41598-020-59083-3. https://www.osti.gov/servlets/purl/1600908.
@article{osti_1600908,
title = {Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors},
author = {Colegrove, Eric M and Albin, David S and Moutinho, Helio R and Amarasinghe, Mahisha and Burst, James M and Metzger, Wyatt K},
abstractNote = {A general problem for semiconductor applications is that very slow deposition on expensive single-crystal substrates yields high crystalline quality with excellent electro-optical properties, but at prohibitive costs and throughput for many applications. In contrast, rapid deposition on inexpensive substrates or nanocrystalline films yields low costs, but comparatively inferior crystallinity, carrier transport, and recombination. Here, we present methods to deposit single-crystal material at rates 2-3 orders of magnitude faster than state-of-the-art epitaxy with low-cost methods without compromising crystalline or electro-optical quality. For example, single-crystal CdTe and CdZnTe films that would take several days to grow by molecular-beam epitaxy are deposited in 8 minutes by close-spaced sublimation, yet retain the same crystalline quality measured by X-ray diffraction rocking curves. The fast deposition is coupled with effective n- and p-type in-situ doping by In, P, and As. The epitaxy can be extended to nanocrystalline substrates. For example, we recrystallize thin CdTe films on glass to deposit large grains with low defect density. The results provide new research paths for photovoltaics, detectors, infrared imaging, flexible electronics, and other applications.},
doi = {10.1038/s41598-020-59083-3},
journal = {Scientific Reports},
number = [1],
volume = [10],
place = {United States},
year = {2020},
month = {2}
}

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