Asymmetric Lattice Disorder Induced at Oxide Interfaces
Abstract
Control of order-disorder phase transitions is a fundamental materials science challenge, underpinning the development of energy storage technologies such as solid oxide fuel cells and batteries, ultra-high temperature ceramics, and durable nuclear waste forms. At present, the development of promising complex oxides for these applications is hindered by a poor understanding of how interfaces affect lattice disordering processes and defect transport. Here we explore the evolution of local disorder in ion-irradiated La2Ti2O7/SrTiO3 thin film heterostructures using a combination of high-resolution scanning transmission electron microscopy (STEM), position-averaged convergent beam electron diffraction (PACBED), electron energy loss spectroscopy (STEM-EELS), and ab initio theory calculations. We observe highly non-uniform lattice disordering driven by asymmetric oxygen vacancy formation across the interface. Our calculations indicate that this asymmetry results from differences in the polyhedral connectivity and vacancy formation energies of the two interface components, suggesting ways to manipulate lattice disorder in functional oxide heterostructures.
- Authors:
-
- Energy and Environment DirectoratePacific Northwest National Laboratory Richland WA 99352 USA
- Physical and Computational Sciences DirectoratePacific Northwest National Laboratory Richland WA 99352 USA
- Environmental Molecular Sciences LaboratoryPacific Northwest National Laboratory Richland WA 99352 USA
- Department of Nuclear EngineeringTexas A&,M University College Station TX 77843 USA
- Publication Date:
- Research Org.:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Org.:
- USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Biological and Environmental Research (BER)
- OSTI Identifier:
- 1600867
- Alternate Identifier(s):
- OSTI ID: 1600871; OSTI ID: 1603102
- Report Number(s):
- PNNL-SA-148989
Journal ID: ISSN 2196-7350
- Grant/Contract Number:
- AC05-76RL01830
- Resource Type:
- Published Article
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Name: Advanced Materials Interfaces; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley-VCH
- Country of Publication:
- Germany
- Language:
- English
- Subject:
- ab initio; ion irradiation; order‐disorder phase transitions; oxide interfaces; thin film heterostructures; 24 POWER TRANSMISSION AND DISTRIBUTION
Citation Formats
Spurgeon, Steven R., Kaspar, Tiffany C., Shutthanandan, Vaithiyalingam, Gigax, Jonathan, Shao, Lin, and Sassi, Michel. Asymmetric Lattice Disorder Induced at Oxide Interfaces. Germany: N. p., 2020.
Web. doi:10.1002/admi.201901944.
Spurgeon, Steven R., Kaspar, Tiffany C., Shutthanandan, Vaithiyalingam, Gigax, Jonathan, Shao, Lin, & Sassi, Michel. Asymmetric Lattice Disorder Induced at Oxide Interfaces. Germany. https://doi.org/10.1002/admi.201901944
Spurgeon, Steven R., Kaspar, Tiffany C., Shutthanandan, Vaithiyalingam, Gigax, Jonathan, Shao, Lin, and Sassi, Michel. Thu .
"Asymmetric Lattice Disorder Induced at Oxide Interfaces". Germany. https://doi.org/10.1002/admi.201901944.
@article{osti_1600867,
title = {Asymmetric Lattice Disorder Induced at Oxide Interfaces},
author = {Spurgeon, Steven R. and Kaspar, Tiffany C. and Shutthanandan, Vaithiyalingam and Gigax, Jonathan and Shao, Lin and Sassi, Michel},
abstractNote = {Control of order-disorder phase transitions is a fundamental materials science challenge, underpinning the development of energy storage technologies such as solid oxide fuel cells and batteries, ultra-high temperature ceramics, and durable nuclear waste forms. At present, the development of promising complex oxides for these applications is hindered by a poor understanding of how interfaces affect lattice disordering processes and defect transport. Here we explore the evolution of local disorder in ion-irradiated La2Ti2O7/SrTiO3 thin film heterostructures using a combination of high-resolution scanning transmission electron microscopy (STEM), position-averaged convergent beam electron diffraction (PACBED), electron energy loss spectroscopy (STEM-EELS), and ab initio theory calculations. We observe highly non-uniform lattice disordering driven by asymmetric oxygen vacancy formation across the interface. Our calculations indicate that this asymmetry results from differences in the polyhedral connectivity and vacancy formation energies of the two interface components, suggesting ways to manipulate lattice disorder in functional oxide heterostructures.},
doi = {10.1002/admi.201901944},
journal = {Advanced Materials Interfaces},
number = ,
volume = ,
place = {Germany},
year = {2020},
month = {2}
}
https://doi.org/10.1002/admi.201901944
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