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Title: Self-trapped hole and impurity-related broad luminescence in β -Ga 2 O 3

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [2]
  1. Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, N-0318 Oslo, Norway
  2. Lawrence Livermore National Laboratory, Livermore, California 94550, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1600049
Grant/Contract Number:  
[AC52-07NA27344]
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
[Journal Name: Journal of Applied Physics Journal Volume: 127 Journal Issue: 7]; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Frodason, Y. K., Johansen, K. M., Vines, L., and Varley, J. B. Self-trapped hole and impurity-related broad luminescence in β -Ga 2 O 3. United States: N. p., 2020. Web. doi:10.1063/1.5140742.
Frodason, Y. K., Johansen, K. M., Vines, L., & Varley, J. B. Self-trapped hole and impurity-related broad luminescence in β -Ga 2 O 3. United States. doi:10.1063/1.5140742.
Frodason, Y. K., Johansen, K. M., Vines, L., and Varley, J. B. Fri . "Self-trapped hole and impurity-related broad luminescence in β -Ga 2 O 3". United States. doi:10.1063/1.5140742.
@article{osti_1600049,
title = {Self-trapped hole and impurity-related broad luminescence in β -Ga 2 O 3},
author = {Frodason, Y. K. and Johansen, K. M. and Vines, L. and Varley, J. B.},
abstractNote = {},
doi = {10.1063/1.5140742},
journal = {Journal of Applied Physics},
number = [7],
volume = [127],
place = {United States},
year = {2020},
month = {2}
}

Journal Article:
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