Highly Enhanced Curie Temperature in Ga‐Implanted Fe 3 GeTe 2 van der Waals Material

Yang, Mengmeng; Li, Qian; Chopdekar, Rajesh V.; Stan, Camelia; Cabrini, Stefano; Choi, Jun Woo; Wang, Sheng; Wang, Tianye; Gao, Nan; Scholl, Andreas; Tamura, Nobumichi; Hwang, Chanyong; Wang, Feng; Qiu, Ziqiang

doi:10.1002/qute.202000017

Title: Highly Enhanced Curie Temperature in Ga‐Implanted Fe ₃ GeTe ₂ van der Waals Material

Authors:

Yang, Mengmeng ^[1]; Li, Qian ^[1]; Chopdekar, Rajesh V. ^[2]; Stan, Camelia ^[2]; Cabrini, Stefano ^[2]; Choi, Jun Woo ^[3]; Wang, Sheng ^[1]; Wang, Tianye ^[1]; Gao, Nan ^[1]; Scholl, Andreas ^[2]; Tamura, Nobumichi ^[2]; Hwang, Chanyong ^[4]; Wang, Feng ^[1];

^[1]

Department of PhysicsUniversity of California Berkeley CA 94720 USA
Advanced Light Source and Molecular FoundryLawrence Berkeley National Laboratory Berkeley CA 94720 USA
Center for SpintronicsKorea Institute of Science and Technology Seoul 02792 Korea
Korea Research Institute of Standards and Science Yuseong Daejeon 305‐340 Republic of Korea

Publication Date:: 2020-04-01

Sponsoring Org.:: USDOE

OSTI Identifier:: 1599526

Grant/Contract Number:: DE‐AC02‐05CH1123

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Advanced Quantum Technologies

Additional Journal Information:: Journal Name: Advanced Quantum Technologies Journal Volume: 3 Journal Issue: 4; Journal ID: ISSN 2511-9044

Publisher:: Wiley Blackwell (John Wiley & Sons)

Country of Publication:: Germany

Language:: English

Citation Formats


                    Yang, Mengmeng, Li, Qian, Chopdekar, Rajesh V., Stan, Camelia, Cabrini, Stefano, Choi, Jun Woo, Wang, Sheng, Wang, Tianye, Gao, Nan, Scholl, Andreas, Tamura, Nobumichi, Hwang, Chanyong, Wang, Feng, and Qiu, Ziqiang. Highly Enhanced Curie Temperature in Ga‐Implanted Fe 3 GeTe 2 van der Waals Material.  Germany: N. p., 2020. 
        Web.  doi:10.1002/qute.202000017.

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                    Yang, Mengmeng, Li, Qian, Chopdekar, Rajesh V., Stan, Camelia, Cabrini, Stefano, Choi, Jun Woo, Wang, Sheng, Wang, Tianye, Gao, Nan, Scholl, Andreas, Tamura, Nobumichi, Hwang, Chanyong, Wang, Feng, & Qiu, Ziqiang. Highly Enhanced Curie Temperature in Ga‐Implanted Fe 3 GeTe 2 van der Waals Material.  Germany.  doi:https://doi.org/10.1002/qute.202000017

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                    Yang, Mengmeng, Li, Qian, Chopdekar, Rajesh V., Stan, Camelia, Cabrini, Stefano, Choi, Jun Woo, Wang, Sheng, Wang, Tianye, Gao, Nan, Scholl, Andreas, Tamura, Nobumichi, Hwang, Chanyong, Wang, Feng, and Qiu, Ziqiang. Wed .  
        "Highly Enhanced Curie Temperature in Ga‐Implanted Fe 3 GeTe 2 van der Waals Material".  Germany.  doi:https://doi.org/10.1002/qute.202000017.

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@article{osti_1599526,

  title        = {Highly Enhanced Curie Temperature in Ga‐Implanted Fe 3 GeTe 2 van der Waals Material},

  author       = {Yang, Mengmeng and Li, Qian and Chopdekar, Rajesh V. and Stan, Camelia and Cabrini, Stefano and Choi, Jun Woo and Wang, Sheng and Wang, Tianye and Gao, Nan and Scholl, Andreas and Tamura, Nobumichi and Hwang, Chanyong and Wang, Feng and Qiu, Ziqiang},

  abstractNote = {},

  doi          = {10.1002/qute.202000017},

  journal      = {Advanced Quantum Technologies},

  number       = 4,

  volume       = 3,

  place        = {Germany},

  year         = {2020},

  month        = {4}

}

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DOI: https://doi.org/10.1002/qute.202000017

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Title: Highly Enhanced Curie Temperature in Ga‐Implanted Fe 3 GeTe 2 van der Waals Material

Citation Formats

Amorphization Induced by Focused Ion Beam Milling in Metallic and Electronic Materials journal, August 2013

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Toward Two-Dimensional All-Carbon Heterostructures via Ion Beam Patterning of Single-Layer Graphene journal, July 2015

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Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr 2 Ge 2 Te 6 journal, May 2018

Fe3GeTe2 and Ni3GeTe2 – Two New Layered Transition-Metal Compounds: Crystal Structures, HRTEM Investigations, and Magnetic and Electrical Properties journal, April 2006

Effects of hydrostatic pressure on spin-lattice coupling in two-dimensional ferromagnetic Cr 2 Ge 2 Te 6 journal, February 2018

Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride journal, September 2018

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Title: Highly Enhanced Curie Temperature in Ga‐Implanted Fe ₃ GeTe ₂ van der Waals Material

Amorphization Induced by Focused Ion Beam Milling in Metallic and Electronic Materials
journal, August 2013

Controlling magnetism in 2D CrI3 by electrostatic doping
journal, May 2018

Dynamics and efficiency of magnetic vortex circulation reversal
journal, March 2015

Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals
journal, April 2017

The use of a Ga ⁺ focused ion beam to modify graphene for device applications
journal, May 2012

3D Mesoporous van der Waals Heterostructures for Trifunctional Energy Electrocatalysis
journal, December 2017

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journal, March 2018

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journal, July 2015

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Pressure-induced spin reorientation transition in layered ferromagnetic insulator ${Cr}_{2} {Ge}_{2} {Te}_{6}$
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Fe3GeTe2 and Ni3GeTe2 – Two New Layered Transition-Metal Compounds: Crystal Structures, HRTEM Investigations, and Magnetic and Electrical Properties
journal, April 2006

Effects of hydrostatic pressure on spin-lattice coupling in two-dimensional ferromagnetic Cr ₂ Ge ₂ Te ₆
journal, February 2018

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journal, September 2018

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journal, August 2018

Magnetic Properties of Layered Itinerant Electron Ferromagnet Fe ₃ GeTe ₂
journal, December 2013

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journal, February 2018

Strong anisotropy and magnetostriction in the two-dimensional Stoner ferromagnet ${Fe}_{3} {GeTe}_{2}$
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journal, March 2009

Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit
journal, June 2017

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journal, October 2019

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journal, October 2003

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journal, July 2003

XAS and XMCD studies of amorphous FeCo-based ribbons
journal, June 2011

Interface electronic structures of ${BaTiO}_{3} @ X$ nanoparticles ( $X = γ {-Fe}_{2} O_{3}$ , ${Fe}_{3} O_{4}$ , $α {-Fe}_{2} O_{3}$ , and Fe) investigated by XAS and XMCD
journal, January 2009

Two-dimensional magnetic crystals and emergent heterostructure devices
journal, February 2019

Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy
journal, September 2017