Title: Highly Enhanced Curie Temperature in Ga‐Implanted Fe 3 GeTe 2 van der Waals Material

Journal Article · · Advanced Quantum Technologies
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  1. Department of Physics University of California Berkeley CA 94720 USA
  2. Advanced Light Source and Molecular Foundry Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
  3. Center for Spintronics Korea Institute of Science and Technology Seoul 02792 Korea
  4. Korea Research Institute of Standards and Science Yuseong Daejeon 305‐340 Republic of Korea
+ Show Author Affiliations

Abstract Among many efforts in the research of van der Waals (vdW) magnetic materials, increasing the Curie temperature above room temperature has been at the center of research in developing spintronics technology using vdW materials. Here an effective and reliable method of increasing the Curie temperature of ferromagnetic Fe 3 GeTe 2 vdW materials by Ga implantation is reported. It is found that implanting Ga into Fe 3 GeTe 2 by the amount of 10 −3 Ga Å −3 could greatly enhance the Fe 3 GeTe 2 Curie temperature by almost 100%. Spatially resolved microdiffraction and element‐resolved X‐ray absorption spectroscopy show little changes in the Fe 3 GeTe 2 crystal structure and Fe valence state. In addition, the Ga implantation changes the Fe 3 GeTe 2 magnetization from out‐of‐plane direction at low temperature to in‐plane direction at high temperature. The result opens a new opportunity for tailoring the magnetic properties of vdW materials beyond room temperature.

Sponsoring Organization:
USDOE
OSTI ID:
1599526
Journal Information:
Advanced Quantum Technologies, Journal Name: Advanced Quantum Technologies Journal Issue: 4 Vol. 3; ISSN 2511-9044
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

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