Computational generation of voids in -Si and -Si:H by cavitation at low density
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1599504
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Name: Physical Review Materials Journal Volume: 4 Journal Issue: 2; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Guerrero, Enrique, and Strubbe, David A. Computational generation of voids in a -Si and a -Si:H by cavitation at low density. United States: N. p., 2020.
Web. doi:10.1103/PhysRevMaterials.4.025601.
Guerrero, Enrique, & Strubbe, David A. Computational generation of voids in a -Si and a -Si:H by cavitation at low density. United States. https://doi.org/10.1103/PhysRevMaterials.4.025601
Guerrero, Enrique, and Strubbe, David A. Thu .
"Computational generation of voids in a -Si and a -Si:H by cavitation at low density". United States. https://doi.org/10.1103/PhysRevMaterials.4.025601.
@article{osti_1599504,
title = {Computational generation of voids in a -Si and a -Si:H by cavitation at low density},
author = {Guerrero, Enrique and Strubbe, David A.},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.4.025601},
journal = {Physical Review Materials},
number = 2,
volume = 4,
place = {United States},
year = {Thu Feb 13 00:00:00 EST 2020},
month = {Thu Feb 13 00:00:00 EST 2020}
}
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https://doi.org/10.1103/PhysRevMaterials.4.025601
https://doi.org/10.1103/PhysRevMaterials.4.025601
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