Quantifying Large Lattice Relaxations in Photovoltaic Devices

doi:10.1103/PhysRevApplied.13.024025

Title: Quantifying Large Lattice Relaxations in Photovoltaic Devices

Authors:

; Patikirige, Yasas; Kweon, Kyoung E.;

;

; Varley, Joel B.; Lordi, Vincenzo; Bansal, Shubhra

Publication Date:: 2020-02-11

Sponsoring Org.:: USDOE

OSTI Identifier:: 1599488

Grant/Contract Number:: AC52-07NA27344; EE-0007750

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Applied

Additional Journal Information:: Journal Name: Physical Review Applied Journal Volume: 13 Journal Issue: 2; Journal ID: ISSN 2331-7019

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Nardone, Marco, Patikirige, Yasas, Kweon, Kyoung E., Walkons, Curtis, Magorian Friedlmeier, Theresa, Varley, Joel B., Lordi, Vincenzo, and Bansal, Shubhra. Quantifying Large Lattice Relaxations in Photovoltaic Devices.  United States: N. p., 2020. 
        Web.  doi:10.1103/PhysRevApplied.13.024025.

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                    Nardone, Marco, Patikirige, Yasas, Kweon, Kyoung E., Walkons, Curtis, Magorian Friedlmeier, Theresa, Varley, Joel B., Lordi, Vincenzo, & Bansal, Shubhra. Quantifying Large Lattice Relaxations in Photovoltaic Devices.  United States.  doi:10.1103/PhysRevApplied.13.024025.

Copy to clipboard


                    Nardone, Marco, Patikirige, Yasas, Kweon, Kyoung E., Walkons, Curtis, Magorian Friedlmeier, Theresa, Varley, Joel B., Lordi, Vincenzo, and Bansal, Shubhra. Tue .  
        "Quantifying Large Lattice Relaxations in Photovoltaic Devices".  United States.  doi:10.1103/PhysRevApplied.13.024025.

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@article{osti_1599488,

  title        = {Quantifying Large Lattice Relaxations in Photovoltaic Devices},

  author       = {Nardone, Marco and Patikirige, Yasas and Kweon, Kyoung E. and Walkons, Curtis and Magorian Friedlmeier, Theresa and Varley, Joel B. and Lordi, Vincenzo and Bansal, Shubhra},

  abstractNote = {},

  doi          = {10.1103/PhysRevApplied.13.024025},

  journal      = {Physical Review Applied},

  number       = 2,

  volume       = 13,

  place        = {United States},

  year         = {2020},

  month        = {2}

}

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DOI: 10.1103/PhysRevApplied.13.024025

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Works referenced in this record:

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Title: Quantifying Large Lattice Relaxations in Photovoltaic Devices

Citation Formats

Some Properties of a Double Acceptor Center in CdTe journal, May 1964

Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study journal, July 1985

Advanced electrical simulation of thin film solar cells journal, May 2013

Kinetics of persistent photoconductivity in crystalline III–V semiconductors journal, May 2017

Projector augmented-wave method journal, December 1994

Correcting overbinding in local-density-approximation calculations journal, June 1999

Impact of heat-light soaking on potassium fluoride treated CIGS solar cells with CdS buffer layer journal, November 2017

Hybrid functionals based on a screened Coulomb potential journal, May 2003

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe journal, October 2002

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal, July 1996

Electrostatic interactions between charged defects in supercells journal, December 2010

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals journal, May 2018

Reversible conductivity changes in discharge‐produced amorphous Si journal, August 1977

Nature of AX Centers in Antimony-Doped Cadmium Telluride Nanobelts journal, January 2015

Conductivity storage in CdS journal, December 1968

Quantitative analysis of the persistent photoconductivity effect in Cu(In,Ga)Se 2 journal, April 2018

Intrinsic D X Centers in Ternary Chalcopyrite Semiconductors journal, January 2008

Single-crystal Cu(In,Ga)Se 2 solar cells grown on GaAs substrates journal, July 2018

Open-circuit and doping transients of Cu(In,Ga)Se 2 solar cells with varying Ga content journal, February 2015

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

Electronic aspects of the optical-absorption spectrum of the EL 2 defect in GaAs journal, April 1992

Understanding defect-related issues limiting efficiency of CIGS solar cells journal, August 2009

First-principles calculations for point defects in solids journal, March 2014

Effects of long-term heat-light soaking on Cu(In,Ga)Se 2 solar cells with KF postdeposition treatment journal, August 2017

Light-induced changes in the minority carrier diffusion length of Cu(In,Ga)Se2 absorber material journal, April 2017

Solar cell efficiency tables (version 52) journal, June 2018

Effects of RbF postdeposition treatment and heat-light soaking on the metastable acceptor activation of CuInSe 2 thin film photovoltaic devices journal, August 2018

Light- and bias-induced metastabilities in Cu(In,Ga)Se[sub 2] based solar cells caused by the (V[sub Se]-V[sub Cu]) vacancy complex journal, January 2006

Spectral dependence and Hall effect of persistent photoconductivity in polycrystalline Cu(In,Ga)Se2 thin films journal, April 2002

Time‐dependent open‐circuit voltage in CuInSe 2 /CdS solar cells: Theory and experiment journal, May 1987

Persistent photocurrent in amorphous chalcogenides journal, December 1986

Persistent photoconductivity in Cu(In,Ga)Se2 heterojunctions and thin films prepared by sequential deposition journal, July 1998

Creation and relaxation of light- and bias-induced metastabilities in Cu(In,Ga)Se2 journal, September 2009

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP journal, January 1977

Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon journal, January 2005

The metastable changes of the trap spectra of CuInSe 2 ‐based photovoltaic devices journal, November 1996

Characterization Method for the Relaxation Process of Metastable Defect States in Cu(In,Ga)Se 2 Thin Films with Photoisothermal Capacitance Transient Spectroscopy journal, February 2011

Electron-beam induced degradation in CdTe photovoltaics journal, August 2000

Self‐compensation through a large lattice relaxation in p ‐type ZnSe journal, August 1989

Large and persistent photoconductivity due to hole-hole correlation in CdS journal, August 2018

Investigation of the metastability behavior of CIGS based solar cells with ZnMgO–Zn(S,O,OH) window-buffer layers journal, August 2011

Self-Consistent Equations Including Exchange and Correlation Effects journal, November 1965

Some Properties of a Double Acceptor Center in CdTe
journal, May 1964

Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
journal, July 1985

Advanced electrical simulation of thin film solar cells
journal, May 2013

Kinetics of persistent photoconductivity in crystalline III–V semiconductors
journal, May 2017

Projector augmented-wave method
journal, December 1994

Correcting overbinding in local-density-approximation calculations
journal, June 1999

Impact of heat-light soaking on potassium fluoride treated CIGS solar cells with CdS buffer layer
journal, November 2017

Hybrid functionals based on a screened Coulomb potential
journal, May 2003

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
journal, October 2002

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Electrostatic interactions between charged defects in supercells
journal, December 2010

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals
journal, May 2018

Reversible conductivity changes in discharge‐produced amorphous Si
journal, August 1977

Nature of AX Centers in Antimony-Doped Cadmium Telluride Nanobelts
journal, January 2015

Conductivity storage in CdS
journal, December 1968

Quantitative analysis of the persistent photoconductivity effect in Cu(In,Ga)Se ₂
journal, April 2018

Intrinsic $D X$ Centers in Ternary Chalcopyrite Semiconductors
journal, January 2008

Single-crystal Cu(In,Ga)Se ₂ solar cells grown on GaAs substrates
journal, July 2018

Open-circuit and doping transients of Cu(In,Ga)Se ₂ solar cells with varying Ga content
journal, February 2015

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Electronic aspects of the optical-absorption spectrum of the EL 2 defect in GaAs
journal, April 1992

Understanding defect-related issues limiting efficiency of CIGS solar cells
journal, August 2009

First-principles calculations for point defects in solids
journal, March 2014

Effects of long-term heat-light soaking on Cu(In,Ga)Se ₂ solar cells with KF postdeposition treatment
journal, August 2017

Light-induced changes in the minority carrier diffusion length of Cu(In,Ga)Se2 absorber material
journal, April 2017

Solar cell efficiency tables (version 52)
journal, June 2018

Effects of RbF postdeposition treatment and heat-light soaking on the metastable acceptor activation of CuInSe ₂ thin film photovoltaic devices
journal, August 2018

Light- and bias-induced metastabilities in Cu(In,Ga)Se[sub 2] based solar cells caused by the (V[sub Se]-V[sub Cu]) vacancy complex
journal, January 2006

Spectral dependence and Hall effect of persistent photoconductivity in polycrystalline Cu(In,Ga)Se2 thin films
journal, April 2002

Time‐dependent open‐circuit voltage in CuInSe ₂ /CdS solar cells: Theory and experiment
journal, May 1987

Persistent photocurrent in amorphous chalcogenides
journal, December 1986

Persistent photoconductivity in Cu(In,Ga)Se2 heterojunctions and thin films prepared by sequential deposition
journal, July 1998

Creation and relaxation of light- and bias-induced metastabilities in Cu(In,Ga)Se2
journal, September 2009

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
journal, January 1977

Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon
journal, January 2005

The metastable changes of the trap spectra of CuInSe ₂ ‐based photovoltaic devices
journal, November 1996

Characterization Method for the Relaxation Process of Metastable Defect States in Cu(In,Ga)Se ₂ Thin Films with Photoisothermal Capacitance Transient Spectroscopy
journal, February 2011

Electron-beam induced degradation in CdTe photovoltaics
journal, August 2000

Self‐compensation through a large lattice relaxation in p ‐type ZnSe
journal, August 1989

Large and persistent photoconductivity due to hole-hole correlation in CdS
journal, August 2018

Investigation of the metastability behavior of CIGS based solar cells with ZnMgO–Zn(S,O,OH) window-buffer layers
journal, August 2011

Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965