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Title: Influence of Charge Transport Layers on Capacitance Measured in Halide Perovskite Solar Cells

Abstract

Capacitance-based techniques were previously used to measure the electrical properties of halide perovskite solar cells (PSCs) such as defect activation energy and density, carrier concentration, and dielectric constant, which provide key information for evaluating the device performance. Herein, we show that capacitance-based techniques cannot be used to reliably analyze the properties of defects in the perovskite layer or at its interface, since the high-frequency capacitance signature is due to the response of charge carriers in the hole-transport layer (HTL). For HTL-free PSCs, the high-frequency capacitance can be considered as the geometric capacitance for analyzing the dielectric constant of the perovskite layer, since there is no trapping and de-trapping of charge carriers in the perovskite layer. We also find that the low-frequency capacitance signature can be used to calculate the activation energy of the ionic conductivity of the perovskite layer, but the overlapping effects with charge transport materials must be avoided.

Authors:
 [1];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [2]
  1. Univ. of Toledo, OH (United States); Univ. of Tikrit (Iraq)
  2. Univ. of Toledo, OH (United States)
  3. National Cheng Kung Univ., Tainan City (Taiwan)
Publication Date:
Research Org.:
Univ. of Toledo, OH (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; Air Force Research Laboratory (AFRL); National Science Foundation (NSF)
OSTI Identifier:
1599340
Alternate Identifier(s):
OSTI ID: 1704032
Grant/Contract Number:  
EE0008753; FA9453-18-2-0037; DMR-1807818
Resource Type:
Accepted Manuscript
Journal Name:
Joule
Additional Journal Information:
Journal Volume: 4; Journal Issue: 3; Journal ID: ISSN 2542-4351
Publisher:
Elsevier - Cell Press
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; admittance spectroscopy; capacitance-voltage; perovskite solar cells; n-i-pp-i-n; charge transport layers; dielectric constant; capacitance signatures; temperature dependence

Citation Formats

Awni, Rasha A., Song, Zhaoning, Chen, Cong, Li, Chongwen, Wang, Changlei, Razooqi, Mohammed A., Chen, Lei, Wang, Xiaoming, Ellingson, Randy J., Li, Jian V., and Yan, Yanfa. Influence of Charge Transport Layers on Capacitance Measured in Halide Perovskite Solar Cells. United States: N. p., 2020. Web. doi:10.1016/j.joule.2020.01.012.
Awni, Rasha A., Song, Zhaoning, Chen, Cong, Li, Chongwen, Wang, Changlei, Razooqi, Mohammed A., Chen, Lei, Wang, Xiaoming, Ellingson, Randy J., Li, Jian V., & Yan, Yanfa. Influence of Charge Transport Layers on Capacitance Measured in Halide Perovskite Solar Cells. United States. https://doi.org/10.1016/j.joule.2020.01.012
Awni, Rasha A., Song, Zhaoning, Chen, Cong, Li, Chongwen, Wang, Changlei, Razooqi, Mohammed A., Chen, Lei, Wang, Xiaoming, Ellingson, Randy J., Li, Jian V., and Yan, Yanfa. Wed . "Influence of Charge Transport Layers on Capacitance Measured in Halide Perovskite Solar Cells". United States. https://doi.org/10.1016/j.joule.2020.01.012. https://www.osti.gov/servlets/purl/1599340.
@article{osti_1599340,
title = {Influence of Charge Transport Layers on Capacitance Measured in Halide Perovskite Solar Cells},
author = {Awni, Rasha A. and Song, Zhaoning and Chen, Cong and Li, Chongwen and Wang, Changlei and Razooqi, Mohammed A. and Chen, Lei and Wang, Xiaoming and Ellingson, Randy J. and Li, Jian V. and Yan, Yanfa},
abstractNote = {Capacitance-based techniques were previously used to measure the electrical properties of halide perovskite solar cells (PSCs) such as defect activation energy and density, carrier concentration, and dielectric constant, which provide key information for evaluating the device performance. Herein, we show that capacitance-based techniques cannot be used to reliably analyze the properties of defects in the perovskite layer or at its interface, since the high-frequency capacitance signature is due to the response of charge carriers in the hole-transport layer (HTL). For HTL-free PSCs, the high-frequency capacitance can be considered as the geometric capacitance for analyzing the dielectric constant of the perovskite layer, since there is no trapping and de-trapping of charge carriers in the perovskite layer. We also find that the low-frequency capacitance signature can be used to calculate the activation energy of the ionic conductivity of the perovskite layer, but the overlapping effects with charge transport materials must be avoided.},
doi = {10.1016/j.joule.2020.01.012},
journal = {Joule},
number = 3,
volume = 4,
place = {United States},
year = {Wed Feb 12 00:00:00 EST 2020},
month = {Wed Feb 12 00:00:00 EST 2020}
}

Journal Article:

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Cited by: 31 works
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