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Title: High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb

Abstract

Polar metals are an intriguing class of materials that simultaneously host free carriers and polar structural distortions. Despite the name “polar metal,” however, most well-studied polar metals are poor electrical conductors. Here, we demonstrate the molecular beam epitaxial growth of LaPtSb and LaAuGe, two polar metal compounds whose electrical resistivity is an order of magnitude lower than the well studied oxide polar metals. These materials belong to a broad family of ABC intermetallics adopting the stuffed wurtzite structure, also known as hexagonal Heusler compounds. Scanning transmission electron microscopy reveals a polar structure with unidirectionally buckled BC (PtSb and AuGe) planes. Magnetotransport measurements demonstrate good metallic behavior with low residual resistivity (ρ LaAuGe = 59.05 μΩ cm and ρ LaAPtSb = 27.81 μΩ·cm at 2 K) and high carrier density (n h ~ 10 21 cm -3). Photoemission spectroscopy measurements confirm the band metallicity and are in quantitative agreement with density functional theory (DFT) calculations. Through DFT-chemical pressure and crystal orbital Hamilton population analyses, the atomic packing factor is found to support the polar buckling of the structure although the degree of direct interlayer B–C bonding is limited by repulsion at the A–C contacts. Furthermore, when combined with predicted ferroelectric hexagonalmore » Heuslers, these materials provide a new platform for fully epitaxial, multiferroic heterostructures.« less

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
US Army Research Office (ARO); National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division; Univ. of Wisconsin Materials Research Science and Engineering Center (MRSEC)
OSTI Identifier:
1599066
Alternate Identifier(s):
OSTI ID: 1579457
Grant/Contract Number:  
AC02-06CH11357; W911NF-17-1-0254; DMR-1752797; FG02-08ER46547; DMR-0703406; DMR-1720415; DMR-1809594
Resource Type:
Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 7; Journal Issue: 12; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Electronic transport; Ferroelectricity; Crystal structure; Photoelectron spectroscopy; Epitaxy; Density functional theory; Heterostructures

Citation Formats

Du, Dongxue, Lim, Amber, Zhang, Chenyu, Strohbeen, Patrick J., Shourov, Estiaque H., Rodolakis, Fanny, McChesney, Jessica L., Voyles, Paul, Fredrickson, Daniel C., and Kawasaki, Jason K. High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb. United States: N. p., 2019. Web. doi:10.1063/1.5132339.
Du, Dongxue, Lim, Amber, Zhang, Chenyu, Strohbeen, Patrick J., Shourov, Estiaque H., Rodolakis, Fanny, McChesney, Jessica L., Voyles, Paul, Fredrickson, Daniel C., & Kawasaki, Jason K. High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb. United States. doi:10.1063/1.5132339.
Du, Dongxue, Lim, Amber, Zhang, Chenyu, Strohbeen, Patrick J., Shourov, Estiaque H., Rodolakis, Fanny, McChesney, Jessica L., Voyles, Paul, Fredrickson, Daniel C., and Kawasaki, Jason K. Mon . "High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb". United States. doi:10.1063/1.5132339. https://www.osti.gov/servlets/purl/1599066.
@article{osti_1599066,
title = {High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb},
author = {Du, Dongxue and Lim, Amber and Zhang, Chenyu and Strohbeen, Patrick J. and Shourov, Estiaque H. and Rodolakis, Fanny and McChesney, Jessica L. and Voyles, Paul and Fredrickson, Daniel C. and Kawasaki, Jason K.},
abstractNote = {Polar metals are an intriguing class of materials that simultaneously host free carriers and polar structural distortions. Despite the name “polar metal,” however, most well-studied polar metals are poor electrical conductors. Here, we demonstrate the molecular beam epitaxial growth of LaPtSb and LaAuGe, two polar metal compounds whose electrical resistivity is an order of magnitude lower than the well studied oxide polar metals. These materials belong to a broad family of ABC intermetallics adopting the stuffed wurtzite structure, also known as hexagonal Heusler compounds. Scanning transmission electron microscopy reveals a polar structure with unidirectionally buckled BC (PtSb and AuGe) planes. Magnetotransport measurements demonstrate good metallic behavior with low residual resistivity (ρLaAuGe = 59.05 μΩ cm and ρLaAPtSb = 27.81 μΩ·cm at 2 K) and high carrier density (nh ~ 1021 cm-3). Photoemission spectroscopy measurements confirm the band metallicity and are in quantitative agreement with density functional theory (DFT) calculations. Through DFT-chemical pressure and crystal orbital Hamilton population analyses, the atomic packing factor is found to support the polar buckling of the structure although the degree of direct interlayer B–C bonding is limited by repulsion at the A–C contacts. Furthermore, when combined with predicted ferroelectric hexagonal Heuslers, these materials provide a new platform for fully epitaxial, multiferroic heterostructures.},
doi = {10.1063/1.5132339},
journal = {APL Materials},
number = 12,
volume = 7,
place = {United States},
year = {2019},
month = {12}
}

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Works referenced in this record:

A ferroelectric-like structural transition in a metal
journal, September 2013

  • Shi, Youguo; Guo, Yanfeng; Wang, Xia
  • Nature Materials, Vol. 12, Issue 11
  • DOI: 10.1038/nmat3754

Observation of Quasi-Two-Dimensional Polar Domains and Ferroelastic Switching in a Metal, Ca 3 Ru 2 O 7
journal, April 2018


Chemical Pressure Schemes for the Prediction of Soft Phonon Modes: A Chemist’s Guide to the Vibrations of Solid State Materials
journal, April 2016


Surface and electronic structure of epitaxial PtLuSb (001) thin films
journal, May 2014

  • Patel, Sahil J.; Kawasaki, Jason K.; Logan, John
  • Applied Physics Letters, Vol. 104, Issue 20
  • DOI: 10.1063/1.4879475

A simple electron counting model for half-Heusler surfaces
journal, June 2018

  • Kawasaki, Jason K.; Sharan, Abhishek; Johansson, Linda I. M.
  • Science Advances, Vol. 4, Issue 6
  • DOI: 10.1126/sciadv.aar5832

Artificial two-dimensional polar metal at room temperature
journal, April 2018


Ferroelectric-like metallic state in electron doped BaTiO3
journal, August 2015

  • Fujioka, J.; Doi, A.; Okuyama, D.
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep13207

Polar metals by geometric design
journal, April 2016


Polar metal phase stabilized in strained La-doped BaTiO3films
journal, July 2017


Discerning Chemical Pressure amidst Weak Potentials: Vibrational Modes and Dumbbell/Atom Substitution in Intermetallic Aluminides
journal, September 2018

  • Hilleke, Katerina P.; Fredrickson, Daniel C.
  • The Journal of Physical Chemistry A, Vol. 122, Issue 42
  • DOI: 10.1021/acs.jpca.8b07419

Electronically enhanced layer buckling and Au-Au dimerization in epitaxial LaAuSb films
journal, February 2019


Heusler interfaces—Opportunities beyond spintronics?
journal, August 2019


The surface composition and spin polarization of NiMnSb epitaxial thin films
journal, March 2000


Structure, 119Sn solid state NMR and Mössbauer spectroscopy of RECuSn ()
journal, November 2006


Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)
journal, July 2003

  • Bach, P.; Bader, A. S.; Rüster, C.
  • Applied Physics Letters, Vol. 83, Issue 3
  • DOI: 10.1063/1.1594286

The crystal structure, magnetic susceptibility, electrical resistivity, specific heat, and electronic band structure of RAuGe (R = Sc, Y, La, Lu)
journal, February 1997

  • Schnelle, W.; Pöttgen, R.; Kremer, R. K.
  • Journal of Physics: Condensed Matter, Vol. 9, Issue 7
  • DOI: 10.1088/0953-8984/9/7/009

Nonreciprocal responses from non-centrosymmetric quantum materials
journal, September 2018


RE Pt X compounds with structures related to AlB 2 - and MgAgAs-type ( RE = Y, Rare earth element; X = P, As, Sb)
journal, January 1986


Coexistence of polar distortion and metallicity in PbTi 1 x Nb x O 3
journal, October 2017


Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds
journal, January 2008


Crystal orbital Hamilton populations (COHP): energy-resolved visualization of chemical bonding in solids based on density-functional calculations
journal, August 1993

  • Dronskowski, Richard; Bloechl, Peter E.
  • The Journal of Physical Chemistry, Vol. 97, Issue 33
  • DOI: 10.1021/j100135a014

Polar metals as electrodes to suppress the critical-thickness limit in ferroelectric nanocapacitors
journal, November 2018

  • Puggioni, Danilo; Giovannetti, Gianluca; Rondinelli, James M.
  • Journal of Applied Physics, Vol. 124, Issue 17
  • DOI: 10.1063/1.5049607

REInCd, REAsPd and RESbPt compounds (RE ≡ rare earth element)
journal, March 1981


AlB2-related intermetallic compounds – a comprehensive view based on group-subgroup relations
journal, January 2001

  • Hoffmann, R. -D.; Pöttgen, Rainer
  • Zeitschrift für Kristallographie - Crystalline Materials, Vol. 216, Issue 3
  • DOI: 10.1524/zkri.216.3.127.20327

Metallic and nonmetallic conductivity of thin epitaxial silver films
journal, May 1992


Surface morphology and electric conductivity of epitaxial Cu(100) films grown on H‐terminated Si(100)
journal, May 1996

  • Krastev, E. T.; Voice, L. D.; Tobin, R. G.
  • Journal of Applied Physics, Vol. 79, Issue 9
  • DOI: 10.1063/1.361508

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates
journal, May 2018


Ferroelectric switching of a two-dimensional metal
journal, July 2018


Chemical Pressure-Driven Incommensurability in CaPd 5 : Clues to High-Pressure Chemistry Offered by Complex Intermetallics
journal, June 2016


Semiconducting half-Heusler and LiGaGe structure type compounds
journal, May 2009

  • Casper, Frederick; Seshadri, Ram; Felser, Claudia
  • physica status solidi (a), Vol. 206, Issue 5
  • DOI: 10.1002/pssa.200881223

Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures
journal, January 2014

  • Kawasaki, Jason K.; Johansson, Linda I. M.; Schultz, Brian D.
  • Applied Physics Letters, Vol. 104, Issue 2
  • DOI: 10.1063/1.4862191