High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb
Abstract
Polar metals are an intriguing class of materials that simultaneously host free carriers and polar structural distortions. Despite the name “polar metal,” however, most well-studied polar metals are poor electrical conductors. Here, we demonstrate the molecular beam epitaxial growth of LaPtSb and LaAuGe, two polar metal compounds whose electrical resistivity is an order of magnitude lower than the well studied oxide polar metals. These materials belong to a broad family of ABC intermetallics adopting the stuffed wurtzite structure, also known as hexagonal Heusler compounds. Scanning transmission electron microscopy reveals a polar structure with unidirectionally buckled BC (PtSb and AuGe) planes. Magnetotransport measurements demonstrate good metallic behavior with low residual resistivity (ρLaAuGe = 59.05 μΩ cm and ρLaAPtSb = 27.81 μΩ·cm at 2 K) and high carrier density (nh ~ 1021 cm-3). Photoemission spectroscopy measurements confirm the band metallicity and are in quantitative agreement with density functional theory (DFT) calculations. Through DFT-chemical pressure and crystal orbital Hamilton population analyses, the atomic packing factor is found to support the polar buckling of the structure although the degree of direct interlayer B–C bonding is limited by repulsion at the A–C contacts. Furthermore, when combined with predicted ferroelectric hexagonal Heuslers, these materials provide amore »
- Authors:
-
[1];
[1];
[2];
[2];
[1];
[1];
[1]
- Univ. of Wisconsin, Madison, WI (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- US Army Research Office (ARO); National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Univ. of Wisconsin Materials Research Science and Engineering Center (MRSEC)
- OSTI Identifier:
- 1599066
- Alternate Identifier(s):
- OSTI ID: 1579457
- Grant/Contract Number:
- AC02-06CH11357; W911NF-17-1-0254; DMR-1752797; FG02-08ER46547; DMR-0703406; DMR-1720415; DMR-1809594
- Resource Type:
- Accepted Manuscript
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 12; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Electronic transport; Ferroelectricity; Crystal structure; Photoelectron spectroscopy; Epitaxy; Density functional theory; Heterostructures
Citation Formats
Du, Dongxue, Lim, Amber, Zhang, Chenyu, Strohbeen, Patrick J., Shourov, Estiaque H., Rodolakis, Fanny, McChesney, Jessica L., Voyles, Paul, Fredrickson, Daniel C., and Kawasaki, Jason K. High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb. United States: N. p., 2019.
Web. doi:10.1063/1.5132339.
Du, Dongxue, Lim, Amber, Zhang, Chenyu, Strohbeen, Patrick J., Shourov, Estiaque H., Rodolakis, Fanny, McChesney, Jessica L., Voyles, Paul, Fredrickson, Daniel C., & Kawasaki, Jason K. High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb. United States. https://doi.org/10.1063/1.5132339
Du, Dongxue, Lim, Amber, Zhang, Chenyu, Strohbeen, Patrick J., Shourov, Estiaque H., Rodolakis, Fanny, McChesney, Jessica L., Voyles, Paul, Fredrickson, Daniel C., and Kawasaki, Jason K. Mon .
"High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb". United States. https://doi.org/10.1063/1.5132339. https://www.osti.gov/servlets/purl/1599066.
@article{osti_1599066,
title = {High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb},
author = {Du, Dongxue and Lim, Amber and Zhang, Chenyu and Strohbeen, Patrick J. and Shourov, Estiaque H. and Rodolakis, Fanny and McChesney, Jessica L. and Voyles, Paul and Fredrickson, Daniel C. and Kawasaki, Jason K.},
abstractNote = {Polar metals are an intriguing class of materials that simultaneously host free carriers and polar structural distortions. Despite the name “polar metal,” however, most well-studied polar metals are poor electrical conductors. Here, we demonstrate the molecular beam epitaxial growth of LaPtSb and LaAuGe, two polar metal compounds whose electrical resistivity is an order of magnitude lower than the well studied oxide polar metals. These materials belong to a broad family of ABC intermetallics adopting the stuffed wurtzite structure, also known as hexagonal Heusler compounds. Scanning transmission electron microscopy reveals a polar structure with unidirectionally buckled BC (PtSb and AuGe) planes. Magnetotransport measurements demonstrate good metallic behavior with low residual resistivity (ρLaAuGe = 59.05 μΩ cm and ρLaAPtSb = 27.81 μΩ·cm at 2 K) and high carrier density (nh ~ 1021 cm-3). Photoemission spectroscopy measurements confirm the band metallicity and are in quantitative agreement with density functional theory (DFT) calculations. Through DFT-chemical pressure and crystal orbital Hamilton population analyses, the atomic packing factor is found to support the polar buckling of the structure although the degree of direct interlayer B–C bonding is limited by repulsion at the A–C contacts. Furthermore, when combined with predicted ferroelectric hexagonal Heuslers, these materials provide a new platform for fully epitaxial, multiferroic heterostructures.},
doi = {10.1063/1.5132339},
journal = {APL Materials},
number = 12,
volume = 7,
place = {United States},
year = {Mon Dec 16 00:00:00 EST 2019},
month = {Mon Dec 16 00:00:00 EST 2019}
}
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