Advances in terahertz solid-state physics and devices

Hesler, Jeffrey; Prasankumar, Rohit Prativadi; Tignon, Jerome

doi:10.1063/1.5122975

Title: Advances in terahertz solid-state physics and devices

Journal Article · 18 September 2019 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5122975 · OSTI ID:1599038

Hesler, Jeffrey ^[1];

^[2];

^[3]

Virginia Diodes, Inc., Charlottesville, VA (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sorbonne Univ., Univ. Paris-Diderot, Paris (France)

Terahertz (THz) science and technology have attracted tremendous attention owing to their potential applications in areas including high-speed communications, nondestructive evaluation, biological and medical sensing, and national security.1,2 Terahertz waves bridge electronics and photonics, as well as classical and quantum physics, making them equally attractive for fundamental studies of novel physical phenomena. To realize a broad range of real terahertz applications, it is essential to develop compact solid- state devices for terahertz sources, detectors, modulators, and compact systems. These devices often employ quantum materials and heterostructures and can incorporate other features including carrier transfer using atomic layer epitaxy, micro- and electromechanical systems, plasmonic resonators, and metamaterials. To optimize these devices, we have to understand and control ultrafast carrier dynamics in these advanced materials. Furthermore, we have organized a Special Topic in the Journal of Applied Physics to highlight the state-of-the-art in terahertz solid-state devices while also unveiling the properties of these materials on an ultrafast timescale.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: 89233218CNA000001

OSTI ID:: 1599038

Report Number(s):: LA-UR-19-29705; TRN: US2103753

Journal Information:: Journal of Applied Physics, Vol. 126, Issue 11; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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References (40)

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