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Title: Advances in terahertz solid-state physics and devices

Abstract

Terahertz (THz) science and technology have attracted tremendous attention owing to their potential applications in areas including high-speed communications, nondestructive evaluation, biological and medical sensing, and national security.1,2 Terahertz waves bridge electronics and photonics, as well as classical and quantum physics, making them equally attractive for fundamental studies of novel physical phenomena. To realize a broad range of real terahertz applications, it is essential to develop compact solid- state devices for terahertz sources, detectors, modulators, and compact systems. These devices often employ quantum materials and heterostructures and can incorporate other features including carrier transfer using atomic layer epitaxy, micro- and electromechanical systems, plasmonic resonators, and metamaterials. To optimize these devices, we have to understand and control ultrafast carrier dynamics in these advanced materials. Furthermore, we have organized a Special Topic in the Journal of Applied Physics to highlight the state-of-the-art in terahertz solid-state devices while also unveiling the properties of these materials on an ultrafast timescale.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [3]
  1. Virginia Diodes, Inc., Charlottesville, VA (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Sorbonne Univ., Univ. Paris-Diderot, Paris (France)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1599038
Report Number(s):
LA-UR-19-29705
Journal ID: ISSN 0021-8979; TRN: US2103753
Grant/Contract Number:  
89233218CNA000001
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 11; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; Material Science; Electromagnetic radiation detectors; Superlattices; Terahertz radiation; Thermomechanical analysis; Condensed matter physics; Lasers; Field effect transistors; Antennas

Citation Formats

Hesler, Jeffrey, Prasankumar, Rohit Prativadi, and Tignon, Jerome. Advances in terahertz solid-state physics and devices. United States: N. p., 2019. Web. doi:10.1063/1.5122975.
Hesler, Jeffrey, Prasankumar, Rohit Prativadi, & Tignon, Jerome. Advances in terahertz solid-state physics and devices. United States. https://doi.org/10.1063/1.5122975
Hesler, Jeffrey, Prasankumar, Rohit Prativadi, and Tignon, Jerome. Wed . "Advances in terahertz solid-state physics and devices". United States. https://doi.org/10.1063/1.5122975. https://www.osti.gov/servlets/purl/1599038.
@article{osti_1599038,
title = {Advances in terahertz solid-state physics and devices},
author = {Hesler, Jeffrey and Prasankumar, Rohit Prativadi and Tignon, Jerome},
abstractNote = {Terahertz (THz) science and technology have attracted tremendous attention owing to their potential applications in areas including high-speed communications, nondestructive evaluation, biological and medical sensing, and national security.1,2 Terahertz waves bridge electronics and photonics, as well as classical and quantum physics, making them equally attractive for fundamental studies of novel physical phenomena. To realize a broad range of real terahertz applications, it is essential to develop compact solid- state devices for terahertz sources, detectors, modulators, and compact systems. These devices often employ quantum materials and heterostructures and can incorporate other features including carrier transfer using atomic layer epitaxy, micro- and electromechanical systems, plasmonic resonators, and metamaterials. To optimize these devices, we have to understand and control ultrafast carrier dynamics in these advanced materials. Furthermore, we have organized a Special Topic in the Journal of Applied Physics to highlight the state-of-the-art in terahertz solid-state devices while also unveiling the properties of these materials on an ultrafast timescale.},
doi = {10.1063/1.5122975},
journal = {Journal of Applied Physics},
number = 11,
volume = 126,
place = {United States},
year = {2019},
month = {9}
}

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