skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High-field spatial imaging of charge transport in silicon at low temperature

Authors:
ORCiD logo [1];  [1]; ORCiD logo [2];  [3]; ORCiD logo [4];  [3];  [1];  [3]; ORCiD logo [1];  [5]; ORCiD logo [1];  [6]
  1. Department of Physics, Stanford University, Stanford, California 94305, USA
  2. Fermi National Accelerator Laboratory, Center for Particle Astrophysics, Batavia, Illinois 60510, USA, Kavli Institute for Cosmological Physics, University of Chicago, Chicago, Illinois 60637, USA
  3. SLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025, USA
  4. Department of Physics, Stanford University, Stanford, California 94305, USA, SLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025, USA
  5. Department of Physics, San Diego State University, San Diego, California 92182, USA
  6. Department of Physics, Santa Clara University, Santa Clara, California 95053, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1598914
Grant/Contract Number:  
1161130-110-SDDTA; DEAC02-76SF00515; AC02-07CH11359
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Name: AIP Advances Journal Volume: 10 Journal Issue: 2; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Stanford, C., Moffatt, R. A., Kurinsky, N. A., Brink, P. L., Cabrera, B., Cherry, M., Insulla, F., Kelsey, M., Ponce, F., Sundqvist, K., Yellin, S., and Young, B. A. High-field spatial imaging of charge transport in silicon at low temperature. United States: N. p., 2020. Web. doi:10.1063/1.5131171.
Stanford, C., Moffatt, R. A., Kurinsky, N. A., Brink, P. L., Cabrera, B., Cherry, M., Insulla, F., Kelsey, M., Ponce, F., Sundqvist, K., Yellin, S., & Young, B. A. High-field spatial imaging of charge transport in silicon at low temperature. United States. doi:10.1063/1.5131171.
Stanford, C., Moffatt, R. A., Kurinsky, N. A., Brink, P. L., Cabrera, B., Cherry, M., Insulla, F., Kelsey, M., Ponce, F., Sundqvist, K., Yellin, S., and Young, B. A. Sat . "High-field spatial imaging of charge transport in silicon at low temperature". United States. doi:10.1063/1.5131171.
@article{osti_1598914,
title = {High-field spatial imaging of charge transport in silicon at low temperature},
author = {Stanford, C. and Moffatt, R. A. and Kurinsky, N. A. and Brink, P. L. and Cabrera, B. and Cherry, M. and Insulla, F. and Kelsey, M. and Ponce, F. and Sundqvist, K. and Yellin, S. and Young, B. A.},
abstractNote = {},
doi = {10.1063/1.5131171},
journal = {AIP Advances},
number = 2,
volume = 10,
place = {United States},
year = {2020},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5131171

Save / Share:

Works referenced in this record:

Energy band structure in p-type germanium and silicon
journal, September 1956


First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector
journal, August 2018