Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective
Abstract
Compared to graphene with semimetallic features, two-dimensional (2D) silicon carbide (Si–C) materials constitute another highly promising family for opto-electronic applications owing to their intrinsic electronic gaps.
- Authors:
-
[1];
[2];
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
- School of Chemistry and Materials Engineering, Changshu Institute of Technology, Changshu, P. R. China
- Theoretical Physics and Chemistry of Materials, Los Alamos National Laboratory, Los Alamos, USA, Skolkovo Institute of Science and Technology
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1598716
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Nanoscale
- Additional Journal Information:
- Journal Name: Nanoscale Journal Volume: 12 Journal Issue: 7; Journal ID: ISSN 2040-3364
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Zhou, Liujiang, Dong, Huilong, and Tretiak, Sergei. Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective. United Kingdom: N. p., 2020.
Web. doi:10.1039/C9NR08755A.
Zhou, Liujiang, Dong, Huilong, & Tretiak, Sergei. Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective. United Kingdom. https://doi.org/10.1039/C9NR08755A
Zhou, Liujiang, Dong, Huilong, and Tretiak, Sergei. Thu .
"Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective". United Kingdom. https://doi.org/10.1039/C9NR08755A.
@article{osti_1598716,
title = {Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective},
author = {Zhou, Liujiang and Dong, Huilong and Tretiak, Sergei},
abstractNote = {Compared to graphene with semimetallic features, two-dimensional (2D) silicon carbide (Si–C) materials constitute another highly promising family for opto-electronic applications owing to their intrinsic electronic gaps.},
doi = {10.1039/C9NR08755A},
journal = {Nanoscale},
number = 7,
volume = 12,
place = {United Kingdom},
year = {Thu Feb 20 00:00:00 EST 2020},
month = {Thu Feb 20 00:00:00 EST 2020}
}
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https://doi.org/10.1039/C9NR08755A
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