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Title: Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective

Abstract

Compared to graphene with semimetallic features, two-dimensional (2D) silicon carbide (Si–C) materials constitute another highly promising family for opto-electronic applications owing to their intrinsic electronic gaps.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3]
  1. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
  2. School of Chemistry and Materials Engineering, Changshu Institute of Technology, Changshu, P. R. China
  3. Theoretical Physics and Chemistry of Materials, Los Alamos National Laboratory, Los Alamos, USA, Skolkovo Institute of Science and Technology
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1598716
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 12 Journal Issue: 7; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Zhou, Liujiang, Dong, Huilong, and Tretiak, Sergei. Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective. United Kingdom: N. p., 2020. Web. doi:10.1039/C9NR08755A.
Zhou, Liujiang, Dong, Huilong, & Tretiak, Sergei. Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective. United Kingdom. doi:10.1039/C9NR08755A.
Zhou, Liujiang, Dong, Huilong, and Tretiak, Sergei. Thu . "Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective". United Kingdom. doi:10.1039/C9NR08755A.
@article{osti_1598716,
title = {Recent advances of novel ultrathin two-dimensional silicon carbides from a theoretical perspective},
author = {Zhou, Liujiang and Dong, Huilong and Tretiak, Sergei},
abstractNote = {Compared to graphene with semimetallic features, two-dimensional (2D) silicon carbide (Si–C) materials constitute another highly promising family for opto-electronic applications owing to their intrinsic electronic gaps.},
doi = {10.1039/C9NR08755A},
journal = {Nanoscale},
number = 7,
volume = 12,
place = {United Kingdom},
year = {2020},
month = {2}
}

Journal Article:
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