Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films

Lin, Meng-Kai; Villaos, Rovi Angelo B.; Hlevyack, Joseph A.; Chen, Peng; Liu, Ro-Ya; Hsu, Chia-Hsiu; Avila, José; Mo, Sung-Kwan; Chuang, Feng-Chuan; Chiang, T. -C.

doi:10.1103/PhysRevLett.124.036402

Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin ${PtTe}_{2}$ Films

Journal Article · 24 January 2020 · Physical Review Letters

DOI: https://doi.org/10.1103/PhysRevLett.124.036402 · OSTI ID:1598478

Lin, Meng-Kai ^[1];

; Hlevyack, Joseph A.;

;

; Hsu, Chia-Hsiu; Avila, José;

;

University of Illinois at Urbana-Champaign

Platinum ditelluride (PtTe2), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two tri-atomic layers (TLs) with a negative gap of -0.36 eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79 eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.

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Research Organization:: Univ. of Illinois, Chicago, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46383

OSTI ID:: 1598478

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 3 Vol. 124; ISSN 0031-9007; ISSN PRLTAO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe 2 Films

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Title: Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin ${PtTe}_{2}$ Films