High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

doi:10.1364/OE.381601

Title: High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

Authors:

Powell, Keith;

; Desai, Smit; Austin, Mitchell; Deng, Jiangdong; Sinclair, Neil; Lončar, Marko; Yi, Xiaoke

Publication Date:: 2020-02-07

Sponsoring Org.:: USDOE

OSTI Identifier:: 1598400

Grant/Contract Number:: SC0019219

Resource Type:: Published Article

Journal Name:: Optics Express

Additional Journal Information:: Journal Name: Optics Express Journal Volume: 28 Journal Issue: 4; Journal ID: ISSN 1094-4087

Publisher:: Optical Society of America

Country of Publication:: United States

Language:: English

Citation Formats


                    Powell, Keith, Shams-Ansari, Amirhassan, Desai, Smit, Austin, Mitchell, Deng, Jiangdong, Sinclair, Neil, Lončar, Marko, and Yi, Xiaoke. High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing.  United States: N. p., 2020. 
        Web.  doi:10.1364/OE.381601.

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                    Powell, Keith, Shams-Ansari, Amirhassan, Desai, Smit, Austin, Mitchell, Deng, Jiangdong, Sinclair, Neil, Lončar, Marko, & Yi, Xiaoke. High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing.  United States.  doi:10.1364/OE.381601.

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                    Powell, Keith, Shams-Ansari, Amirhassan, Desai, Smit, Austin, Mitchell, Deng, Jiangdong, Sinclair, Neil, Lončar, Marko, and Yi, Xiaoke. Fri .  
        "High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing".  United States.  doi:10.1364/OE.381601.

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@article{osti_1598400,

  title        = {High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing},

  author       = {Powell, Keith and Shams-Ansari, Amirhassan and Desai, Smit and Austin, Mitchell and Deng, Jiangdong and Sinclair, Neil and Lončar, Marko and Yi, Xiaoke},

  abstractNote = {},

  doi          = {10.1364/OE.381601},

  journal      = {Optics Express},

  number       = 4,

  volume       = 28,

  place        = {United States},

  year         = {2020},

  month        = {2}

}

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DOI: 10.1364/OE.381601

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Works referenced in this record:

Enhanced second-harmonic generation in AlGaAs microring resonators
journal, January 2007

Yang, Zhenshan; Chak, Philip; Bristow, Alan D.
Optics Letters, Vol. 32, Issue 7
DOI: 10.1364/OL.32.000826

Solid-state single-photon emitters
journal, September 2016

Aharonovich, Igor; Englund, Dirk; Toth, Milos
Nature Photonics, Vol. 10, Issue 10
DOI: 10.1038/nphoton.2016.186

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
journal, July 2015

Fuchs, F.; Stender, B.; Trupke, M.
Nature Communications, Vol. 6, Issue 1
DOI: 10.1038/ncomms8578

A Roadmap for Integrated Photonics
journal, January 2018

Glick, Madeleine; Kimmerling, Lionel C.; Pfahl, Robert C.
Optics and Photonics News, Vol. 29, Issue 3
DOI: 10.1364/OPN.29.3.000036

β-SiC-on insulator waveguide structures for modulators and sensor systems
journal, October 2000

Vonsovici, Adrian; Reed, Graham T.; Evans, Alan G. R.
Materials Science in Semiconductor Processing, Vol. 3, Issue 5-6
DOI: 10.1016/S1369-8001(00)00060-3

Integration of Single-Photon Emitters into 3C-SiC Microdisk Resonators
journal, February 2017

Lohrmann, Alexander; Karle, Timothy James; Sewani, Vikas Kanayalal
ACS Photonics, Vol. 4, Issue 3
DOI: 10.1021/acsphotonics.6b00913

Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics
journal, February 2019

Whiteley, Samuel J.; Wolfowicz, Gary; Anderson, Christopher P.
Nature Physics, Vol. 15, Issue 5
DOI: 10.1038/s41567-019-0420-0

Thermal expansion coefficient of 3C–SiC
journal, November 1995

Talwar, D. N.; Sherbondy, Joseph C.
Applied Physics Letters, Vol. 67, Issue 22
DOI: 10.1063/1.115227

Four wave mixing in 3C SiC ring resonators
journal, June 2018

Martini, Francesco; Politi, Alberto
Applied Physics Letters, Vol. 112, Issue 25
DOI: 10.1063/1.5034456

Fabrication of High- Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC
journal, August 2015

Bracher, David O.; Hu, Evelyn L.
Nano Letters, Vol. 15, Issue 9
DOI: 10.1021/acs.nanolett.5b02542

Optical nonlinearities in high-confinement silicon carbide waveguides
journal, January 2015

Cardenas, Jaime; Yu, Mengjie; Okawachi, Yoshitomo
Optics Letters, Vol. 40, Issue 17
DOI: 10.1364/OL.40.004138

Linear integrated optics in 3C silicon carbide
journal, January 2017

Martini, Francesco; Politi, Alberto
Optics Express, Vol. 25, Issue 10
DOI: 10.1364/OE.25.010735

Hydrogenated Amorphous Silicon Carbide Optical Waveguide for Telecommunication Wavelength Applications
journal, December 2010

Shoji, Yuya; Nakanishi, Koichi; Sakakibara, Youichi
Applied Physics Express, Vol. 3, Issue 12
DOI: 10.1143/APEX.3.122201

Oxidation-induced improvement in the sidewall morphology and cross-sectional profile of silicon wire waveguides
journal, January 2004

Takahashi, Jun-ichi; Tsuchizawa, Tai; Watanabe, Toshifumi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 5
DOI: 10.1116/1.1800359

Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD
journal, February 2013

Zhuang, Hao; Zhang, Lei; Staedler, Thorsten
Chemical Vapor Deposition, Vol. 19, Issue 1-3
DOI: 10.1002/cvde.201207011

Single-photon emitting diode in silicon carbide
journal, July 2015

Lohrmann, A.; Iwamoto, N.; Bodrog, Z.
Nature Communications, Vol. 6, Issue 1
DOI: 10.1038/ncomms8783

Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications
journal, July 2011

Daves, W.; Krauss, A.; Behnel, N.
Thin Solid Films, Vol. 519, Issue 18
DOI: 10.1016/j.tsf.2011.02.089

A silicon carbide room-temperature single-photon source
journal, November 2013

Castelletto, S.; Johnson, B. C.; Ivády, V.
Nature Materials, Vol. 13, Issue 2
DOI: 10.1038/nmat3806

Photoluminescence From Er ⁻ Implanted 4h And 6h-SiC
journal, January 2001

Uekusa, Shin-ichiro; Goto, Takayuki
MRS Proceedings, Vol. 692
DOI: 10.1557/PROC-692-H6.13.1

Low-Stress CMOS-Compatible Silicon Carbide Surface-Micromachining Technology—Part I: Process Development and Characterization
journal, June 2011

Nabki, Frederic; Dusatko, Tomas A.; Vengallatore, Srikar
Journal of Microelectromechanical Systems, Vol. 20, Issue 3
DOI: 10.1109/JMEMS.2011.2111355

High quality SiC microdisk resonators fabricated from monolithic epilayer wafers
journal, February 2014

Magyar, Andrew P.; Bracher, David; Lee, Jonathan C.
Applied Physics Letters, Vol. 104, Issue 5
DOI: 10.1063/1.4863932

SiC, a new material for mirrors 1: High power lasers; 2: VUV applications
journal, January 1976

Choyke, W. J.; Farich, R. F.; Hoffman, R. A.
Applied Optics, Vol. 15, Issue 9
DOI: 10.1364/AO.15.002006

Ultrahigh-Q photonic crystal nanocavities based on 4H silicon carbide
journal, January 2019

Song, Bong-Shik; Asano, Takashi; Jeon, Seungwoo
Optica, Vol. 6, Issue 8
DOI: 10.1364/OPTICA.6.000991

High-Q-factor nanobeam photonic crystal cavities in bulk silicon carbide
journal, December 2018

Song, Bong-Shik; Jeon, Seungwoo; Kim, Heungjoon
Applied Physics Letters, Vol. 113, Issue 23
DOI: 10.1063/1.5058194

Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K
journal, July 1984

Okada, Yasumasa; Tokumaru, Yozo
Journal of Applied Physics, Vol. 56, Issue 2, p. 314-320
DOI: 10.1063/1.333965

High-Q microresonators integrated with microheaters on a 3C-SiC-on-insulator platform
journal, January 2019

Wu, Xi; Fan, Tianren; Eftekhar, Ali A.
Optics Letters, Vol. 44, Issue 20
DOI: 10.1364/OL.44.004941

Second-harmonic generation and linear electro-optical coefficients of SiC polytypes and nanotubes
journal, July 2008

Wu, I. J.; Guo, G. Y.
Physical Review B, Vol. 78, Issue 3
DOI: 10.1103/PhysRevB.78.035447

A rapid and cost-effective metallization technique for 3C–SiC MEMS using direct wire bonding
journal, January 2018

Md Foisal, Abu Riduan; Phan, Hoang-Phuong; Dinh, Toan
RSC Advances, Vol. 8, Issue 28
DOI: 10.1039/C8RA00734A

Mechanical properties of epitaxial 3C silicon carbide thin films
journal, August 2005

Jackson, K. M.; Dunning, J.; Zorman, C. A.
Journal of Microelectromechanical Systems, Vol. 14, Issue 4
DOI: 10.1109/JMEMS.2005.847933

Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition
journal, January 2016

Bosi, M.; Attolini, G.; Negri, M.
CrystEngComm, Vol. 18, Issue 15
DOI: 10.1039/C6CE00280C

Losses in single-mode silicon-on-insulator strip waveguides and bends
journal, January 2004

Vlasov, Yurii A.; McNab, Sharee J.
Optics Express, Vol. 12, Issue 8
DOI: 10.1364/OPEX.12.001622

Bright and photostable single-photon emitter in silicon carbide
journal, January 2016

Lienhard, Benjamin; Schröder, Tim; Mouradian, Sara
Optica, Vol. 3, Issue 7
DOI: 10.1364/OPTICA.3.000768

Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation
journal, June 2015

Sharma, Yogesh K.; Li, Fan; Fisher, C. A.
Materials Science Forum, Vol. 821-823
DOI: 10.4028/www.scientific.net/MSF.821-823.464

Second-harmonic generation using -quasi-phasematching in a GaAs whispering-gallery-mode microcavity
journal, January 2014

Kuo, Paulina S.; Bravo-Abad, Jorge; Solomon, Glenn S.
Nature Communications, Vol. 5, Issue 1
DOI: 10.1038/ncomms4109

Dispersion of nonresonant third-order nonlinearities in Silicon Carbide
journal, January 2017

De Leonardis, Francesco; Soref, Richard A.; Passaro, Vittorio M. N.
Scientific Reports, Vol. 7, Issue 1
DOI: 10.1038/srep40924

Fabrication of ultralow-loss Si/SiO_2 waveguides by roughness reduction
journal, January 2001

Lee, Kevin K.; Lim, Desmond R.; Kimerling, Lionel C.
Optics Letters, Vol. 26, Issue 23
DOI: 10.1364/OL.26.001888

Silicon carbide microdisk resonator
journal, January 2013

Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X. -L.
Optics Letters, Vol. 38, Issue 8
DOI: 10.1364/OL.38.001304

Photonic crystal cavities in cubic (3C) polytype silicon carbide films
journal, January 2013

Radulaski, Marina; Babinec, Thomas M.; Buckley, Sonia
Optics Express, Vol. 21, Issue 26
DOI: 10.1364/OE.21.032623

High Q silicon carbide microdisk resonator
journal, May 2014

Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X. -L.
Applied Physics Letters, Vol. 104, Issue 18
DOI: 10.1063/1.4875707

Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers
journal, August 2016

Wang, Chun; Huang, Nan; Zhuang, Hao
Surface and Coatings Technology, Vol. 299
DOI: 10.1016/j.surfcoat.2016.04.070

Roadmap on silicon photonics
journal, June 2016

Thomson, David; Zilkie, Aaron; Bowers, John E.
Journal of Optics, Vol. 18, Issue 7
DOI: 10.1088/2040-8978/18/7/073003

Linear electro‐optic effect in cubic silicon carbide
journal, October 1991

Tang, Xiao; Irvine, Kenneth G.; Zhang, Dongping
Applied Physics Letters, Vol. 59, Issue 16
DOI: 10.1063/1.106165

Thermal oxidation of 3C silicon carbide single‐crystal layers on silicon
journal, October 1984

Fung, C. D.; Kopanski, J. J.
Applied Physics Letters, Vol. 45, Issue 7
DOI: 10.1063/1.95394

Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model
journal, September 2000

Lee, Kevin K.; Lim, Desmond R.; Luan, Hsin-Chiao
Applied Physics Letters, Vol. 77, Issue 11
DOI: 10.1063/1.1308532

High Q SiC microresonators
journal, January 2013

Cardenas, Jaime; Zhang, Mian; Phare, Christopher T.
Optics Express, Vol. 21, Issue 14
DOI: 10.1364/OE.21.016882

High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator
journal, January 2019

Zheng, Yi; Pu, Minhao; Yi, Ailun
Optics Express, Vol. 27, Issue 9
DOI: 10.1364/OE.27.013053

High-Q integrated photonic microresonators on 3C-SiC-on-insulator (SiCOI) platform
journal, January 2018

Fan, Tianren; Moradinejad, Hesam; Wu, Xi
Optics Express, Vol. 26, Issue 20
DOI: 10.1364/OE.26.025814

Visible Photoluminescence from Cubic (3C) Silicon Carbide Microdisks Coupled to High Quality Whispering Gallery Modes
journal, December 2014

Radulaski, Marina; Babinec, Thomas M.; Müller, Kai
ACS Photonics, Vol. 2, Issue 1
DOI: 10.1021/ph500384p

Fabrication of a CMOS compatible pressure sensor for harsh environments
journal, August 2004

Pakula, L. S.; Yang, H.; Pham, H. T. M.
Journal of Micromechanics and Microengineering, Vol. 14, Issue 11
DOI: 10.1088/0960-1317/14/11/007

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Title: High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

Citation Formats

Enhanced second-harmonic generation in AlGaAs microring resonators journal, January 2007

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Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model journal, September 2000

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Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
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Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics
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Four wave mixing in 3C SiC ring resonators
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Optical nonlinearities in high-confinement silicon carbide waveguides
journal, January 2015

Linear integrated optics in 3C silicon carbide
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Hydrogenated Amorphous Silicon Carbide Optical Waveguide for Telecommunication Wavelength Applications
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Oxidation-induced improvement in the sidewall morphology and cross-sectional profile of silicon wire waveguides
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Low Temperature Hetero-Epitaxial Growth of 3C-SiC Films on Si Utilizing Microwave Plasma CVD
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Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications
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Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model
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High-quality factor, high-confinement microring resonators in 4H-silicon carbide-on-insulator
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High-Q integrated photonic microresonators on 3C-SiC-on-insulator (SiCOI) platform
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