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Title: Growth of GaAs on single-crystal layered-2D Bi2Se3

Abstract

This article demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi2Se3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi2Se3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi2Se3 to form Ga2Se3, which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga-Bi2Se3 interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.

Authors:
 [1];  [2];  [3];  [2]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1598126
Alternate Identifier(s):
OSTI ID: 1702100
Report Number(s):
NREL/JA-5900-74782
Journal ID: ISSN 0022-0248
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 534; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; metalorganic chemical vapor deposition; layered 2D materials; semiconducting gallium arsenide; semiconducting III-V materials; semiconducting II-VI materials; characterization

Citation Formats

McMahon, William E., Melamed, Celeste L., Tamboli, Adele C., Toberer, Eric S., and Norman, Andrew. Growth of GaAs on single-crystal layered-2D Bi2Se3. United States: N. p., 2019. Web. https://doi.org/10.1016/j.jcrysgro.2019.125457.
McMahon, William E., Melamed, Celeste L., Tamboli, Adele C., Toberer, Eric S., & Norman, Andrew. Growth of GaAs on single-crystal layered-2D Bi2Se3. United States. https://doi.org/10.1016/j.jcrysgro.2019.125457
McMahon, William E., Melamed, Celeste L., Tamboli, Adele C., Toberer, Eric S., and Norman, Andrew. Mon . "Growth of GaAs on single-crystal layered-2D Bi2Se3". United States. https://doi.org/10.1016/j.jcrysgro.2019.125457. https://www.osti.gov/servlets/purl/1598126.
@article{osti_1598126,
title = {Growth of GaAs on single-crystal layered-2D Bi2Se3},
author = {McMahon, William E. and Melamed, Celeste L. and Tamboli, Adele C. and Toberer, Eric S. and Norman, Andrew},
abstractNote = {This article demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi2Se3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi2Se3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi2Se3 to form Ga2Se3, which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga-Bi2Se3 interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.},
doi = {10.1016/j.jcrysgro.2019.125457},
journal = {Journal of Crystal Growth},
number = C,
volume = 534,
place = {United States},
year = {2019},
month = {12}
}