Title: Growth of GaAs on single-crystal layered-2D Bi2Se3

Journal Article · · Journal of Crystal Growth
 [1];  [2];  [3];  [2]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
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This article demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi2Se3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi2Se3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi2Se3 to form Ga2Se3, which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga-Bi2Se3 interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1598126
Report Number(s):
NREL/JA-5900-74782
Journal Information:
Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 534; ISSN 0022-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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Integration of bulk materials with two-dimensional materials for physical coupling and applications journal May 2019
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Thermochemistry of the Ga-Se System journal January 2015

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14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
characterization
layered 2D materials
metalorganic chemical vapor deposition
semiconducting II-VI materials
semiconducting III-V materials
semiconducting gallium arsenide