Growth of GaAs on single-crystal layered-2D Bi2Se3

McMahon, William E.; Melamed, Celeste L.; Tamboli, Adele C.; Toberer, Eric S.; Norman, Andrew

doi:10.1016/j.jcrysgro.2019.125457

Title: Growth of GaAs on single-crystal layered-2D Bi₂Se₃

Abstract

This article demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi₂Se₃ (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi₂Se₃ (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi₂Se₃ to form Ga₂Se₃, which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga-Bi₂Se₃ interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.

Authors:

McMahon, William E. ^[1]; Melamed, Celeste L. ^[2]; Tamboli, Adele C. ^[3]; Toberer, Eric S. ^[2];

^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Colorado School of Mines, Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)

Publication Date:: 2019-12-23

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1598126

Alternate Identifier(s):: OSTI ID: 1702100

Report Number(s):: NREL/JA-5900-74782
Journal ID: ISSN 0022-0248; TRN: US2103234

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Crystal Growth

Additional Journal Information:: Journal Volume: 534; Journal Issue: C; Journal ID: ISSN 0022-0248

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; metalorganic chemical vapor deposition; layered 2D materials; semiconducting gallium arsenide; semiconducting III-V materials; semiconducting II-VI materials; characterization

Citation Formats


                    McMahon, William E., Melamed, Celeste L., Tamboli, Adele C., Toberer, Eric S., and Norman, Andrew. Growth of GaAs on single-crystal layered-2D Bi2Se3.  United States: N. p., 2019. 
Web.  doi:10.1016/j.jcrysgro.2019.125457.

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                    McMahon, William E., Melamed, Celeste L., Tamboli, Adele C., Toberer, Eric S., & Norman, Andrew. Growth of GaAs on single-crystal layered-2D Bi2Se3.  United States.  https://doi.org/10.1016/j.jcrysgro.2019.125457

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                    McMahon, William E., Melamed, Celeste L., Tamboli, Adele C., Toberer, Eric S., and Norman, Andrew. Mon .  
"Growth of GaAs on single-crystal layered-2D Bi2Se3".  United States.  https://doi.org/10.1016/j.jcrysgro.2019.125457.  https://www.osti.gov/servlets/purl/1598126.

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@article{osti_1598126,

  title        = {Growth of GaAs on single-crystal layered-2D Bi2Se3},

  author       = {McMahon, William E. and Melamed, Celeste L. and Tamboli, Adele C. and Toberer, Eric S. and Norman, Andrew},

  abstractNote = {This article demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi2Se3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi2Se3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi2Se3 to form Ga2Se3, which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga-Bi2Se3 interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.},

  doi          = {10.1016/j.jcrysgro.2019.125457},

  journal      = {Journal of Crystal Growth},

  number       = C,

  volume       = 534,

  place        = {United States},

  year         = {2019},

  month        = {12}

}

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Title: Growth of GaAs on single-crystal layered-2D Bi2Se3

Abstract

Citation Formats

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Title: Growth of GaAs on single-crystal layered-2D Bi₂Se₃

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