Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

Wan, Yating; Zhang, Sen; Norman, Justin C.; Kennedy, MJ; He, William; Tong, Yeyu; Shang, Chen; He, Jian‐Jun; Tsang, Hon Ki; Gossard, Arthur C.; Bowers, John E.

doi:10.1002/lpor.201900348

Title: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

Journal Article · 04 February 2020 · Laser & Photonics Reviews

DOI: https://doi.org/10.1002/lpor.201900348 · OSTI ID:1598055

^[1]; Zhang, Sen ^[2]; Norman, Justin C. ^[3]; Kennedy, MJ ^[4]; He, William ^[4]; Tong, Yeyu ^[5]; Shang, Chen ^[3]; He, Jian‐Jun ^[2]; Tsang, Hon Ki ^[6]; Gossard, Arthur C. ^[7]; Bowers, John E. ^[8]

Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA
State Key Laboratory of Modern Optical Instrumentation College of Optical Science and Engineering Zhejiang University Hangzhou 310027 P. R. China
Materials Department University of California Santa Barbara Santa Barbara CA 93106 USA
Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA
Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA, Department of Electronic Engineering The Chinese University of Hong Kong Shatin Hong Kong P. R. China
Department of Electronic Engineering The Chinese University of Hong Kong Shatin Hong Kong P. R. China
Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA, Materials Department University of California Santa Barbara Santa Barbara CA 93106 USA
Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA, Materials Department University of California Santa Barbara Santa Barbara CA 93106 USA, Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA

Abstract Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s ⁻¹ non‐return‐to‐zero signal modulation by directly probing the chip.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; AR0001042

OSTI ID:: 1598055

Alternate ID(s):: OSTI ID: 1799134

Journal Information:: Laser & Photonics Reviews, Journal Name: Laser & Photonics Reviews Journal Issue: 3 Vol. 14; ISSN 1863-8880

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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