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Title: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm

Abstract

Abstract Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s −1 non‐return‐to‐zero signal modulation by directly probing the chip.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [4];  [5];  [3];  [2];  [6];  [7];  [8]
+ Show Author Affiliations
  1. Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA
  2. State Key Laboratory of Modern Optical Instrumentation College of Optical Science and Engineering Zhejiang University Hangzhou 310027 P. R. China
  3. Materials Department University of California Santa Barbara Santa Barbara CA 93106 USA
  4. Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA
  5. Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA, Department of Electronic Engineering The Chinese University of Hong Kong Shatin Hong Kong P. R. China
  6. Department of Electronic Engineering The Chinese University of Hong Kong Shatin Hong Kong P. R. China
  7. Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA, Materials Department University of California Santa Barbara Santa Barbara CA 93106 USA
  8. Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA, Materials Department University of California Santa Barbara Santa Barbara CA 93106 USA, Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1598055
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Laser & Photonics Reviews
Additional Journal Information:
Journal Name: Laser & Photonics Reviews Journal Volume: 14 Journal Issue: 3; Journal ID: ISSN 1863-8880
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Wan, Yating, Zhang, Sen, Norman, Justin C., Kennedy, MJ, He, William, Tong, Yeyu, Shang, Chen, He, Jian‐Jun, Tsang, Hon Ki, Gossard, Arthur C., and Bowers, John E. Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm. Germany: N. p., 2020. Web. doi:10.1002/lpor.201900348.
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Wan, Yating, Zhang, Sen, Norman, Justin C., Kennedy, MJ, He, William, Tong, Yeyu, Shang, Chen, He, Jian‐Jun, Tsang, Hon Ki, Gossard, Arthur C., & Bowers, John E. Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm. Germany. https://doi.org/10.1002/lpor.201900348
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Wan, Yating, Zhang, Sen, Norman, Justin C., Kennedy, MJ, He, William, Tong, Yeyu, Shang, Chen, He, Jian‐Jun, Tsang, Hon Ki, Gossard, Arthur C., and Bowers, John E. Wed . "Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm". Germany. https://doi.org/10.1002/lpor.201900348.
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@article{osti_1598055,
title = {Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm},
author = {Wan, Yating and Zhang, Sen and Norman, Justin C. and Kennedy, MJ and He, William and Tong, Yeyu and Shang, Chen and He, Jian‐Jun and Tsang, Hon Ki and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {Abstract Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s −1 non‐return‐to‐zero signal modulation by directly probing the chip.},
doi = {10.1002/lpor.201900348},
journal = {Laser & Photonics Reviews},
number = 3,
volume = 14,
place = {Germany},
year = {Wed Feb 05 00:00:00 EST 2020},
month = {Wed Feb 05 00:00:00 EST 2020}
}
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Journal Article:
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https://doi.org/10.1002/lpor.201900348
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