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Title: Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires

Journal Article · · 2D Materials
ORCiD logo [1];  [2];  [3];  [4]
  1. Vanderbilt Univ., Nashville, TN (United States); Vanderbilt University
  2. National Institute of Advanced Industrial Science and Technology (AIST), Fukushima (Japan); Southern University of Science and Technology, Shenzhen (China)
  3. National Institute of Advanced Industrial Science and Technology (AIST), Fukushima (Japan); Univ. of Tokyo (Japan)
  4. Vanderbilt Univ., Nashville, TN (United States)

While the exfoliation of almost all layered materials results in a monolayer with the same atomic geometry as its bulk counterpart, the exfoliation of PdSe2 results in a monolayer with a different atomic geometry and a new stoichiometry, Pd2Se3, which is a fusion of two PdSe2 monolayers mediated by Se emission. Here we first report first-principles calculations of lateral junctions between a PdSe2 bilayer and a Pd2Se3 monolayer. In this work, we find that, while several distinct junction geometries are possible, they all exhibit empty interface states below the conduction band. As a result, light n-type doping of either or both sides, e.g. by halogen atoms replacing Se atoms, leads to a remotely-doped interface, i.e. a 1D conducting nanowire that runs along the junction, in between the two semiconductors. We have fabricated such junctions inside a scanning transmission electron microscope (STEM), but doping and transport measurements are not currently practical.

Research Organization:
Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC); Japan Science and Technology Agency (JST); Japan Society for the Promotion of Science (JSPS)
Grant/Contract Number:
FG02-09ER46554
OSTI ID:
1597894
Journal Information:
2D Materials, Journal Name: 2D Materials Journal Issue: 3 Vol. 5; ISSN 2053-1583
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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