Absence of Evidence of Electrical Switching of the Antiferromagnetic Néel Vector

Chiang, C. C.; Huang, S. Y.; Qu, D.; Wu, P. H.; Chien, C. L.

doi:10.1103/PhysRevLett.123.227203

Title: Absence of Evidence of Electrical Switching of the Antiferromagnetic Néel Vector

Abstract

Much theoretical and experimental concern has been focused on the electrical switching of the antiferromagnetic (AFM) Néel vector via spin-orbit torque. Measurements employing multiterminal patterned structures of Pt=AFM show recurring signals of the supposedly planar Hall effect and magnetoresistance, implying AFM switching. We show in this Letter that similar signals have been observed in structures with and without the AFM layer, and of an even larger magnitude using different metals and substrates. These may not be the conclusive evidence of spin-orbit torque switching of AFM, but the thermal artifacts of patterned metal structure on substrate. Furthermore, large current densities in the metallic devices, beyond the Ohmic regime, can generate unintended anisotropic thermal gradients and voltages. AFM switching requires unequivocal detection of the AFM N´eel vector before and after SOT switching.

Authors:

Chiang, C. C. ^[1];

^[2]; Qu, D. ^[3]; Wu, P. H. ^[2];

^[4]

Academia Sinica, Taipei (Taiwan)
National Taiwan Univ., Taipei (Taiwan)
Johns Hopkins Univ., Baltimore, MD (United States)
Academia Sinica, Taipei (Taiwan); National Taiwan Univ., Taipei (Taiwan); Johns Hopkins Univ., Baltimore, MD (United States)

Publication Date:: 2019-11-27

Research Org.:: Johns Hopkins Univ., Baltimore, MD (United States); Univ. of California, Riverside, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC); Ministry of Science and Technology of Taiwan

Contributing Org.:: King Abdullah University of Science and Technology (KAUST)

OSTI Identifier:: 1597411

Grant/Contract Number:: SC0009390; SC0012670; OSR2017-CRG6-3427.01

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 123; Journal Issue: 22; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Chiang, C. C., Huang, S. Y., Qu, D., Wu, P. H., and Chien, C. L. Absence of Evidence of Electrical Switching of the Antiferromagnetic Néel Vector.  United States: N. p., 2019. 
Web.  doi:10.1103/PhysRevLett.123.227203.

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                    Chiang, C. C., Huang, S. Y., Qu, D., Wu, P. H., & Chien, C. L. Absence of Evidence of Electrical Switching of the Antiferromagnetic Néel Vector.  United States.  https://doi.org/10.1103/PhysRevLett.123.227203

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                    Chiang, C. C., Huang, S. Y., Qu, D., Wu, P. H., and Chien, C. L. Wed .  
"Absence of Evidence of Electrical Switching of the Antiferromagnetic Néel Vector".  United States.  https://doi.org/10.1103/PhysRevLett.123.227203.  https://www.osti.gov/servlets/purl/1597411.

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@article{osti_1597411,

  title        = {Absence of Evidence of Electrical Switching of the Antiferromagnetic Néel Vector},

  author       = {Chiang, C. C. and Huang, S. Y. and Qu, D. and Wu, P. H. and Chien, C. L.},

  abstractNote = {Much theoretical and experimental concern has been focused on the electrical switching of the antiferromagnetic (AFM) Néel vector via spin-orbit torque. Measurements employing multiterminal patterned structures of Pt=AFM show recurring signals of the supposedly planar Hall effect and magnetoresistance, implying AFM switching. We show in this Letter that similar signals have been observed in structures with and without the AFM layer, and of an even larger magnitude using different metals and substrates. These may not be the conclusive evidence of spin-orbit torque switching of AFM, but the thermal artifacts of patterned metal structure on substrate. Furthermore, large current densities in the metallic devices, beyond the Ohmic regime, can generate unintended anisotropic thermal gradients and voltages. AFM switching requires unequivocal detection of the AFM N´eel vector before and after SOT switching.},

  doi          = {10.1103/PhysRevLett.123.227203},

  journal      = {Physical Review Letters},

  number       = 22,

  volume       = 123,

  place        = {United States},

  year         = {2019},

  month        = {11}

}

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Works referencing / citing this record:

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices
journal, March 2020

Yan, Han; Feng, Zexin; Qin, Peixin
Advanced Materials, Vol. 32, Issue 12
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Similar Records

Title: Absence of Evidence of Electrical Switching of the Antiferromagnetic Néel Vector

Abstract

Citation Formats

Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO journal, July 2017

Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum journal, May 2012

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance journal, January 2018

Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system journal, February 2016

Spin currents and spin–orbit torques in ferromagnetic trilayers journal, March 2018

Antiferromagnetic spintronics journal, February 2018

Absence of the Thermal Hall Effect in Anomalous Nernst and Spin Seebeck Effects journal, December 2016

Spin transfer torques journal, April 2008

Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy journal, August 2015

Cr -induced Perpendicular Magnetic Anisotropy and Field-Free Spin-Orbit-Torque Switching journal, June 2019

Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect journal, August 2012

Field-free magnetization reversal by spin-Hall effect and exchange bias journal, March 2016

Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents journal, March 2018

Electrical Switching of Antiferromagnetic Mn 2 Au and the Role of Thermal Activation journal, June 2018

Strong Orientation-Dependent Spin-Orbit Torque in Thin Films of the Antiferromagnet Mn 2 Au journal, May 2018

Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films journal, July 2018

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection journal, August 2011

Enhancement of the anomalous Nernst effect in ferromagnetic thin films journal, November 2017

Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures journal, January 2018

Spin torque control of antiferromagnetic moments in NiO journal, September 2018

Platinum as a Thermal Conductivity Standard journal, February 1964

Electrical switching of an antiferromagnet journal, January 2016

Exchange bias journal, February 1999

Field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures journal, July 2016

Current-Induced Switching of Domains in Magnetic Multilayer Devices journal, August 1999

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields journal, May 2014

Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films text, January 2018

Magnetization switching by spin-orbit torque in an antiferromagnet/ferromagnet bilayer system text, January 2015

Field-free magnetization reversal by spin-Hall effect and exchange bias text, January 2015

Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films text, January 2017

Antidamping torque-induced switching in biaxial antiferromagnetic insulators text, January 2018

Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices journal, March 2020

Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO
journal, July 2017

Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
journal, May 2012

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance
journal, January 2018

Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system
journal, February 2016

Spin currents and spin–orbit torques in ferromagnetic trilayers
journal, March 2018

Antiferromagnetic spintronics
journal, February 2018

Absence of the Thermal Hall Effect in Anomalous Nernst and Spin Seebeck Effects
journal, December 2016

Spin transfer torques
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Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy
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$Cr$ -induced Perpendicular Magnetic Anisotropy and Field-Free Spin-Orbit-Torque Switching
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Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect
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Field-free magnetization reversal by spin-Hall effect and exchange bias
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Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents
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Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films
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Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
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Enhancement of the anomalous Nernst effect in ferromagnetic thin films
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journal, January 2018

Spin torque control of antiferromagnetic moments in NiO
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Platinum as a Thermal Conductivity Standard
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Magnetization switching by spin-orbit torque in an antiferromagnet/ferromagnet bilayer system
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Field-free magnetization reversal by spin-Hall effect and exchange bias
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