Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices

Suchalkin, Sergey; Ermolaev, Maksim; Valla, Tonica; Kipshidze, Gela; Smirnov, Dmitry; Moon, Seongphill; Ozerov, Mykhaylo; Jiang, Zhigang; Jiang, Yuxuan; Svensson, Stefan P.; Sarney, Wendy L.; Belenky, Gregory

doi:10.1063/1.5128634

Title: Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices

Abstract

A Dirac-type energy spectrum was demonstrated in gapless ultrashort-period metamorphic InAsSb/InSb superlattices by angle-resolved photoemission spectroscopy (ARPES) measurements. The Fermi velocity value of 7.4 × 105 m/s in a gapless superlattice with a period of 6.2 nm is in good agreement with the results of magnetoabsorption experiments. An “inverted” bandgap opens in the center of the Brillouin zone at higher temperatures and in the superlattice with a larger period. The ARPES data indicate the presence of a surface electron accumulation layer.

Authors:

^[1];

^[2]; Kipshidze, Gela ^[1]; Smirnov, Dmitry ^[3]; Moon, Seongphill ^[3];

^[3];

^[4]; Jiang, Yuxuan ^[4]; Svensson, Stefan P. ^[5]; Sarney, Wendy L. ^[5]; Belenky, Gregory ^[1]

Stony Brook Univ., NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Georgia Inst. of Technology, Atlanta, GA (United States)
Army Research Lab., Adelphi, MD (United States)

Publication Date:: Tue Jan 21 00:00:00 EST 2020

Research Org.:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); National Science Foundation (NSF)

OSTI Identifier:: 1597253

Alternate Identifier(s):: OSTI ID: 1592798

Report Number(s):: BNL-213579-2020-JAAM
Journal ID: ISSN 0003-6951; TRN: US2103069

Grant/Contract Number:: SC0012704; W911TA-16-2-0053; FG02-07ER46451; DMR-1157490; DMR-1644779; AC02-98CH10886

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 116; Journal Issue: 3; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Suchalkin, Sergey, Ermolaev, Maksim, Valla, Tonica, Kipshidze, Gela, Smirnov, Dmitry, Moon, Seongphill, Ozerov, Mykhaylo, Jiang, Zhigang, Jiang, Yuxuan, Svensson, Stefan P., Sarney, Wendy L., and Belenky, Gregory. Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices.  United States: N. p., 2020. 
Web.  doi:10.1063/1.5128634.

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                    Suchalkin, Sergey, Ermolaev, Maksim, Valla, Tonica, Kipshidze, Gela, Smirnov, Dmitry, Moon, Seongphill, Ozerov, Mykhaylo, Jiang, Zhigang, Jiang, Yuxuan, Svensson, Stefan P., Sarney, Wendy L., & Belenky, Gregory. Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices.  United States.  https://doi.org/10.1063/1.5128634

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                    Suchalkin, Sergey, Ermolaev, Maksim, Valla, Tonica, Kipshidze, Gela, Smirnov, Dmitry, Moon, Seongphill, Ozerov, Mykhaylo, Jiang, Zhigang, Jiang, Yuxuan, Svensson, Stefan P., Sarney, Wendy L., and Belenky, Gregory. Tue .  
"Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices".  United States.  https://doi.org/10.1063/1.5128634.  https://www.osti.gov/servlets/purl/1597253.

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@article{osti_1597253,

  title        = {Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices},

  author       = {Suchalkin, Sergey and Ermolaev, Maksim and Valla, Tonica and Kipshidze, Gela and Smirnov, Dmitry and Moon, Seongphill and Ozerov, Mykhaylo and Jiang, Zhigang and Jiang, Yuxuan and Svensson, Stefan P. and Sarney, Wendy L. and Belenky, Gregory},

  abstractNote = {A Dirac-type energy spectrum was demonstrated in gapless ultrashort-period metamorphic InAsSb/InSb superlattices by angle-resolved photoemission spectroscopy (ARPES) measurements. The Fermi velocity value of 7.4 × 105 m/s in a gapless superlattice with a period of 6.2 nm is in good agreement with the results of magnetoabsorption experiments. An “inverted” bandgap opens in the center of the Brillouin zone at higher temperatures and in the superlattice with a larger period. The ARPES data indicate the presence of a surface electron accumulation layer.},

  doi          = {10.1063/1.5128634},

  journal      = {Applied Physics Letters},

  number       = 3,

  volume       = 116,

  place        = {United States},

  year         = {Tue Jan 21 00:00:00 EST 2020},

  month        = {Tue Jan 21 00:00:00 EST 2020}

}

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Title: Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices

Abstract

Citation Formats

Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids journal, February 1979

Engineering Dirac Materials: Metamorphic InAs 1– x Sb x /InAs 1– y Sb y Superlattices with Ultralow Bandgap journal, December 2017

Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface journal, September 1999

Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap journal, March 2019

Classification of stable three-dimensional Dirac semimetals with nontrivial topology journal, September 2014

Interband magneto-optics of InAs 1-x Sb x journal, July 1992

Determination of band gap and effective masses in InAs/Ga 1− x In x Sb superlattices journal, July 1992

Three-dimensional character of semimetallic InAs-GaSb superlattices journal, August 1981

Electronic properties of unstrained unrelaxed narrow gap InAs x Sb 1− x alloys journal, February 2016

Properties of unrelaxed InAs 1−X Sb X alloys grown on compositionally graded buffers journal, October 2011

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy journal, December 2015

Phase diagram of Bi2Sr2CaCu2O8+δ revisited journal, December 2018

Interband Magnetoabsorption in InAs and InSb journal, February 1967

Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers journal, November 2018

Lattice parameter engineering for III–V long wave infrared photonics journal, September 2015

Band parameters for III–V compound semiconductors and their alloys journal, June 2001

Atomic ordering in III/V semiconductor alloys journal, July 1991

Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process journal, November 2002

Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices journal, July 1983

Cyclotron resonance of single-valley Dirac fermions in nearly gapless HgTe quantum wells journal, June 2014

Effect of a skin-deep surface zone on the formation of a two-dimensional electron gas at a semiconductor surface journal, September 2016

Topological Phases in InAs 1 − x Sb x : From Novel Topological Semimetal to Majorana Wire journal, August 2016

Full-band envelope-function approach for type-II broken-gap superlattices journal, July 2009

Triple Point Topological Metals journal, July 2016

Influence of lattice expansion on the topological band order of InAsxSb1−x (x=0, 0.25, 0.5, 0.75, 1) alloys journal, April 2015

Band gap of InAs 1 − x Sb x with native lattice constant journal, December 2012

Energy spectrum and optical absorption of superlattices under strong band inversion conditions journal, April 2019

Triple Point Topological Metals text, January 2016

Cyclotron resonance of single valley Dirac fermions in gapless HgTe quantum well text, January 2013

Effect of a skin-deep surface zone on formation of two-dimensional electron gas at a semiconductor surface text, January 2016

Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids
journal, February 1979

Engineering Dirac Materials: Metamorphic InAs 1– x Sb x /InAs 1– y Sb y Superlattices with Ultralow Bandgap
journal, December 2017

Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
journal, September 1999

Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap
journal, March 2019

Classification of stable three-dimensional Dirac semimetals with nontrivial topology
journal, September 2014

Interband magneto-optics of InAs 1-x Sb x
journal, July 1992

Determination of band gap and effective masses in InAs/Ga 1− x In x Sb superlattices
journal, July 1992

Three-dimensional character of semimetallic InAs-GaSb superlattices
journal, August 1981

Electronic properties of unstrained unrelaxed narrow gap InAs x Sb 1− x alloys
journal, February 2016

Properties of unrelaxed InAs 1−X Sb X alloys grown on compositionally graded buffers
journal, October 2011

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
journal, December 2015

Phase diagram of Bi2Sr2CaCu2O8+δ revisited
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Interband Magnetoabsorption in InAs and InSb
journal, February 1967

Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers
journal, November 2018

Lattice parameter engineering for III–V long wave infrared photonics
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Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

Atomic ordering in III/V semiconductor alloys
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journal, November 2002

Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices
journal, July 1983

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