skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

This content will become publicly available on January 21, 2021

Title: Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices

Abstract

A Dirac-type energy spectrum was shown in gapless ultra-short-period metamorphic InAsSb/InSb superlattices by angle-resolved photoemission spectroscopy (ARPES) measurements. The Fermi velocity value 7.4x10 5 m/s in a gapless superlattice with a period of 6.2nm is in a good agreement with the results of magneto-absorption experiments. An “inverted” bandgap opens in the center of the Brillouin zone at higher temperatures and in the superlattice with a larger period. The ARPES data suggest the presence of a surface electron accumulation layer.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2];  [1];  [3];  [3]; ORCiD logo [3]; ORCiD logo [4];  [4];  [5];  [5];  [1]
  1. Stony Brook Univ., NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  4. Georgia Inst. of Technology, Atlanta, GA (United States)
  5. Army Research Lab., Adelphi, MD (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Army Research Office (ARO); National Science Foundation (NSF)
OSTI Identifier:
1597253
Alternate Identifier(s):
OSTI ID: 1592798
Report Number(s):
BNL-213579-2020-JAAM
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
SC0012704; W911TA-16-2-0053; FG02-07ER46451; DMR-1157490; DMR-1644779; AC02-98CH10886
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 3; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Suchalkin, Sergey, Ermolaev, Maksim, Valla, Tonica, Kipshidze, Gela, Smirnov, Dmitry, Moon, Seongphill, Ozerov, Mykhaylo, Jiang, Zhigang, Jiang, Yuxuan, Svensson, Stefan P., Sarney, Wendy L., and Belenky, Gregory. Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices. United States: N. p., 2020. Web. doi:10.1063/1.5128634.
Suchalkin, Sergey, Ermolaev, Maksim, Valla, Tonica, Kipshidze, Gela, Smirnov, Dmitry, Moon, Seongphill, Ozerov, Mykhaylo, Jiang, Zhigang, Jiang, Yuxuan, Svensson, Stefan P., Sarney, Wendy L., & Belenky, Gregory. Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices. United States. doi:10.1063/1.5128634.
Suchalkin, Sergey, Ermolaev, Maksim, Valla, Tonica, Kipshidze, Gela, Smirnov, Dmitry, Moon, Seongphill, Ozerov, Mykhaylo, Jiang, Zhigang, Jiang, Yuxuan, Svensson, Stefan P., Sarney, Wendy L., and Belenky, Gregory. Tue . "Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices". United States. doi:10.1063/1.5128634.
@article{osti_1597253,
title = {Dirac energy spectrum and inverted bandgap in metamorphic InAsSb/InSb superlattices},
author = {Suchalkin, Sergey and Ermolaev, Maksim and Valla, Tonica and Kipshidze, Gela and Smirnov, Dmitry and Moon, Seongphill and Ozerov, Mykhaylo and Jiang, Zhigang and Jiang, Yuxuan and Svensson, Stefan P. and Sarney, Wendy L. and Belenky, Gregory},
abstractNote = {A Dirac-type energy spectrum was shown in gapless ultra-short-period metamorphic InAsSb/InSb superlattices by angle-resolved photoemission spectroscopy (ARPES) measurements. The Fermi velocity value 7.4x105 m/s in a gapless superlattice with a period of 6.2nm is in a good agreement with the results of magneto-absorption experiments. An “inverted” bandgap opens in the center of the Brillouin zone at higher temperatures and in the superlattice with a larger period. The ARPES data suggest the presence of a surface electron accumulation layer.},
doi = {10.1063/1.5128634},
journal = {Applied Physics Letters},
number = 3,
volume = 116,
place = {United States},
year = {2020},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on January 21, 2021
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Properties of unrelaxed InAs 1−X Sb X alloys grown on compositionally graded buffers
journal, October 2011

  • Belenky, G.; Donetsky, D.; Kipshidze, G.
  • Applied Physics Letters, Vol. 99, Issue 14
  • DOI: 10.1063/1.3650473

Lattice parameter engineering for III–V long wave infrared photonics
journal, September 2015

  • Belenky, G.; Lin, Y.; Kipshidze, G.
  • Electronics Letters, Vol. 51, Issue 19
  • DOI: 10.1049/el.2015.2572

Engineering Dirac Materials: Metamorphic InAs 1– x Sb x /InAs 1– y Sb y Superlattices with Ultralow Bandgap
journal, December 2017


Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156

Band gap of InAs 1 − x Sb x with native lattice constant
journal, December 2012


Electronic properties of unstrained unrelaxed narrow gap InAs x Sb 1− x alloys
journal, February 2016


Interband magneto-optics of InAs 1-x Sb x
journal, July 1992

  • Smith, S. N.; Phillips, C. C.; Thomas, R. H.
  • Semiconductor Science and Technology, Vol. 7, Issue 7
  • DOI: 10.1088/0268-1242/7/7/005

Metamorphic narrow-gap InSb/InAsSb superlattices with ultra-thin layers
journal, November 2018

  • Ermolaev, Maksim; Suchalkin, Sergey; Belenky, Gregory
  • Applied Physics Letters, Vol. 113, Issue 21
  • DOI: 10.1063/1.5051767

Influence of lattice expansion on the topological band order of InAsxSb1−x (x=0, 0.25, 0.5, 0.75, 1) alloys
journal, April 2015


Topological Phases in InAs 1 x Sb x : From Novel Topological Semimetal to Majorana Wire
journal, August 2016


Triple Point Topological Metals
journal, July 2016


Determination of band gap and effective masses in InAs/Ga 1− x In x Sb superlattices
journal, July 1992

  • Omaggio, J. P.; Meyer, J. R.; Wagner, R. J.
  • Applied Physics Letters, Vol. 61, Issue 2
  • DOI: 10.1063/1.108219

Interband Magnetoabsorption in InAs and InSb
journal, February 1967


Three-dimensional character of semimetallic InAs-GaSb superlattices
journal, August 1981


Phase diagram of Bi2Sr2CaCu2O8+δ revisited
journal, December 2018


Full-band envelope-function approach for type-II broken-gap superlattices
journal, July 2009


Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
journal, December 2015

  • Webster, P. T.; Riordan, N. A.; Liu, S.
  • Journal of Applied Physics, Vol. 118, Issue 24
  • DOI: 10.1063/1.4939293

Temperature dependent Hall effect in InAsSb with a 0.11 eV 77 K-bandgap
journal, March 2019

  • Svensson, S. P.; Beck, W. A.; Sarney, W. L.
  • Applied Physics Letters, Vol. 114, Issue 12
  • DOI: 10.1063/1.5081120

Effect of a skin-deep surface zone on the formation of a two-dimensional electron gas at a semiconductor surface
journal, September 2016


Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process
journal, November 2002


Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
journal, September 1999


Cyclotron resonance of single-valley Dirac fermions in nearly gapless HgTe quantum wells
journal, June 2014


Energy spectrum and optical absorption of superlattices under strong band inversion conditions
journal, April 2019


Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices
journal, July 1983


Classification of stable three-dimensional Dirac semimetals with nontrivial topology
journal, September 2014

  • Yang, Bohm-Jung; Nagaosa, Naoto
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5898

Atomic ordering in III/V semiconductor alloys
journal, July 1991

  • Stringfellow, G. B.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, Issue 4
  • DOI: 10.1116/1.585761

Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids
journal, February 1979