Thermal boundary conductance between high thermal conductivity boron arsenide and silicon
- Authors:
-
- Jiangsu Key Laboratory for Design and Manufacture of Micro/Nano Biomedical Instruments and School of Mechanical Engineering, Southeast University, Nanjing 211189, China
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
- Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1596888
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 127 Journal Issue: 5; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Wei, Zhiyong, Yang, Ze, Liu, Ming, Wu, Honglei, Chen, Yunfei, and Yang, Fan. Thermal boundary conductance between high thermal conductivity boron arsenide and silicon. United States: N. p., 2020.
Web. doi:10.1063/1.5139669.
Wei, Zhiyong, Yang, Ze, Liu, Ming, Wu, Honglei, Chen, Yunfei, & Yang, Fan. Thermal boundary conductance between high thermal conductivity boron arsenide and silicon. United States. https://doi.org/10.1063/1.5139669
Wei, Zhiyong, Yang, Ze, Liu, Ming, Wu, Honglei, Chen, Yunfei, and Yang, Fan. Fri .
"Thermal boundary conductance between high thermal conductivity boron arsenide and silicon". United States. https://doi.org/10.1063/1.5139669.
@article{osti_1596888,
title = {Thermal boundary conductance between high thermal conductivity boron arsenide and silicon},
author = {Wei, Zhiyong and Yang, Ze and Liu, Ming and Wu, Honglei and Chen, Yunfei and Yang, Fan},
abstractNote = {},
doi = {10.1063/1.5139669},
journal = {Journal of Applied Physics},
number = 5,
volume = 127,
place = {United States},
year = {2020},
month = {2}
}
Free Publicly Available Full Text
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https://doi.org/10.1063/1.5139669
https://doi.org/10.1063/1.5139669
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Cited by: 1 work
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