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Title: Thermal boundary conductance between high thermal conductivity boron arsenide and silicon

Authors:
ORCiD logo [1];  [2];  [2];  [3]; ORCiD logo [1]; ORCiD logo [2]
  1. Jiangsu Key Laboratory for Design and Manufacture of Micro/Nano Biomedical Instruments and School of Mechanical Engineering, Southeast University, Nanjing 211189, China
  2. Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
  3. Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1596888
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 127 Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Wei, Zhiyong, Yang, Ze, Liu, Ming, Wu, Honglei, Chen, Yunfei, and Yang, Fan. Thermal boundary conductance between high thermal conductivity boron arsenide and silicon. United States: N. p., 2020. Web. doi:10.1063/1.5139669.
Wei, Zhiyong, Yang, Ze, Liu, Ming, Wu, Honglei, Chen, Yunfei, & Yang, Fan. Thermal boundary conductance between high thermal conductivity boron arsenide and silicon. United States. doi:10.1063/1.5139669.
Wei, Zhiyong, Yang, Ze, Liu, Ming, Wu, Honglei, Chen, Yunfei, and Yang, Fan. Fri . "Thermal boundary conductance between high thermal conductivity boron arsenide and silicon". United States. doi:10.1063/1.5139669.
@article{osti_1596888,
title = {Thermal boundary conductance between high thermal conductivity boron arsenide and silicon},
author = {Wei, Zhiyong and Yang, Ze and Liu, Ming and Wu, Honglei and Chen, Yunfei and Yang, Fan},
abstractNote = {},
doi = {10.1063/1.5139669},
journal = {Journal of Applied Physics},
number = 5,
volume = 127,
place = {United States},
year = {2020},
month = {2}
}

Journal Article:
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Works referenced in this record:

Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering
journal, January 2019

  • Maassen, Jesse; Askarpour, Vahid
  • APL Materials, Vol. 7, Issue 1
  • DOI: 10.1063/1.5051538

Mean free path dependent phonon contributions to interfacial thermal conductance
journal, June 2017


Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond
journal, May 2016

  • Sood, Aditya; Cho, Jungwan; Hobart, Karl D.
  • Journal of Applied Physics, Vol. 119, Issue 17
  • DOI: 10.1063/1.4948335

Unusual high thermal conductivity in boron arsenide bulk crystals
journal, July 2018


Quantum mechanical prediction of four-phonon scattering rates and reduced thermal conductivity of solids
journal, January 2016


Phonon transport at interfaces between different phases of silicon and germanium
journal, January 2017

  • Gordiz, Kiarash; Henry, Asegun
  • Journal of Applied Physics, Vol. 121, Issue 2
  • DOI: 10.1063/1.4973573

Modeling solid-state chemistry: Interatomic potentials for multicomponent systems
journal, March 1989


GaN-Based Devices on Si
journal, December 2002


Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids
journal, October 2017


Heat transport in silicon from first-principles calculations
journal, August 2011


Effect of crystalline/amorphous interfaces on thermal transport across confined thin films and superlattices
journal, June 2016

  • Giri, Ashutosh; Braun, Jeffrey L.; Hopkins, Patrick E.
  • Journal of Applied Physics, Vol. 119, Issue 23
  • DOI: 10.1063/1.4953683

Ultrahigh thermal conductivity confirmed in boron arsenide
journal, August 2018


Energy dissipation and transport in nanoscale devices
journal, March 2010


Tightly Bound Excitons in Monolayer WSe 2
journal, July 2014


Tuning the interfacial thermal conductance via the anisotropic elastic properties of graphite
journal, April 2019


Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes
journal, May 2012

  • Su, Zonghui; Huang, Li; Liu, Fang
  • Applied Physics Letters, Vol. 100, Issue 20
  • DOI: 10.1063/1.4718354

Influence of miscut angle of Si(111) substrates on the performance of InGaN LEDs
journal, December 2013

  • Wang, Li; Cui, Zhi-Yong; Huang, Fu-Sheng
  • Applied Physics Express, Vol. 7, Issue 1
  • DOI: 10.7567/APEX.7.012102

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy
journal, April 2019

  • Cheng, Zhe; Bai, Tingyu; Shi, Jingjing
  • ACS Applied Materials & Interfaces, Vol. 11, Issue 20
  • DOI: 10.1021/acsami.9b02234

Thermal conductivity of BN-C nanostructures
journal, September 2012


Fast Parallel Algorithms for Short-Range Molecular Dynamics
journal, March 1995


Effect of interfacial species mixing on phonon transport in semiconductor superlattices
journal, February 2009


First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?
journal, July 2013


Experimental observation of high thermal conductivity in boron arsenide
journal, July 2018


Atomistic study of zinc-blende BAs from molecular dynamics
journal, February 1999


Thermal boundary resistance
journal, July 1989


Interface Thermal Resistance between Dissimilar Anharmonic Lattices
journal, September 2005


Distributions of phonon lifetimes in Brillouin zones
journal, March 2015


Near-Junction Thermal Management: Thermal Conduction in Gallium Nitride Composite Substrates
journal, January 2015


Thermal boundary resistance predictions from molecular dynamics simulations and theoretical calculations
journal, October 2009


Finite strain isotherm and velocities for single-crystal and polycrystalline NaCl at high pressures and 300°K
journal, January 1978


Comparison of atomic-level simulation methods for computing thermal conductivity
journal, April 2002

  • Schelling, Patrick K.; Phillpot, Simon R.; Keblinski, Pawel
  • Physical Review B, Vol. 65, Issue 14
  • DOI: 10.1103/PhysRevB.65.144306

Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity
journal, June 2018

  • Xing, Jie; Glaser, Evan R.; Song, Bai
  • Applied Physics Letters, Vol. 112, Issue 24
  • DOI: 10.1063/1.5034787

Mode dependent lattice thermal conductivity of single layer graphene
journal, October 2014

  • Wei, Zhiyong; Yang, Juekuan; Bi, Kedong
  • Journal of Applied Physics, Vol. 116, Issue 15
  • DOI: 10.1063/1.4898338

Molecular-dynamics simulation of thermal conductivity of silicon crystals
journal, January 2000


Molecular dynamics simulation of thermal boundary conductance between carbon nanotubes and SiO 2
journal, April 2010


High thermal conductivity in cubic boron arsenide crystals
journal, July 2018


Thermal transport across graphene/SiC interface: effects of atomic bond and crystallinity of substrate
journal, March 2015


Tunable Anisotropic Thermal Conductivity and Elastic Properties in Intercalated Graphite via Lithium Ions
journal, January 2018

  • Wei, Zhiyong; Yang, Fan; Bi, Kedong
  • The Journal of Physical Chemistry C, Vol. 122, Issue 3
  • DOI: 10.1021/acs.jpcc.7b09717