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Title: Lattice hardening due to vacancy diffusion in (GeTe)mSb2Te3 alloys

 [1];  [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1];  [1]
  1. Michigan State Univ., East Lansing, MI (United States)
Publication Date:
Research Org.:
Michigan State Univ., East Lansing, MI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1545964
Grant/Contract Number:  
SC0019252; SC0001054
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 5; Journal ID: ISSN 0021-8979
American Institute of Physics (AIP)
Country of Publication:
United States

Citation Formats

Peng, Wanyue, Smiadak, David M., Boehlert, Michael G., Mather, Spencer, Williams, Jared B., Morelli, Donald T., and Zevalkink, Alexandra. Lattice hardening due to vacancy diffusion in (GeTe)mSb2Te3 alloys. United States: N. p., 2019. Web. doi:10.1063/1.5108659.
Peng, Wanyue, Smiadak, David M., Boehlert, Michael G., Mather, Spencer, Williams, Jared B., Morelli, Donald T., & Zevalkink, Alexandra. Lattice hardening due to vacancy diffusion in (GeTe)mSb2Te3 alloys. United States.
Peng, Wanyue, Smiadak, David M., Boehlert, Michael G., Mather, Spencer, Williams, Jared B., Morelli, Donald T., and Zevalkink, Alexandra. Thu . "Lattice hardening due to vacancy diffusion in (GeTe)mSb2Te3 alloys". United States.
title = {Lattice hardening due to vacancy diffusion in (GeTe)mSb2Te3 alloys},
author = {Peng, Wanyue and Smiadak, David M. and Boehlert, Michael G. and Mather, Spencer and Williams, Jared B. and Morelli, Donald T. and Zevalkink, Alexandra},
abstractNote = {},
doi = {10.1063/1.5108659},
journal = {Journal of Applied Physics},
number = 5,
volume = 126,
place = {United States},
year = {2019},
month = {8}

Journal Article:
Free Publicly Available Full Text
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Figures / Tables:

FIG. 1 FIG. 1: a) Ambient-temperature rhombohedral structure of GeTe (R3m), b) Sb2Te3 ($R\bar{3}m$), and c) (GeTe)mSb2Te3 (R3m) with m = 3 used for illustrative purposes. The cation vacancies in (GeTe)mSb2Te3 are relaxed into ordered layers, which resemble van der Waals gaps. Note that the hexagonal unit cell was employed here, withmore » the c-axis perpendicular to the layers. d) At high temperature, (GeTe)mSb2Te3 transitions to cubic symmetry with randomly distributed vacancies on the cation site. It can be visualized as stoichiometric occupancy of Ge, Sb, and vacancies on the cation site, while 100% of Te on the anion site.« less

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