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Title: Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit

Abstract

Two-dimensional heterostructures combined with vertical geometries are candidates to probe and utilize the physical properties of atomically-thin materials. The vertical configuration enables a unique form of hot-carrier spectroscopy as well as atomic-scale devices. Here, we present the room-temperature evolution of heteroepitaxial perovskite hot-electron transistors using a SrRuO3 base down to the monolayer limit (~4 Å). As a fundamental electronic probe, we observe an abrupt transition in the hot-electron mean free path as a function of base thickness, coinciding with the thickness-dependent resistive transition. As a path towards devices, we demonstrate the integrated synthesis of perovskite one-dimensional electrical edge contacts using water-soluble and growth-compatible Sr3Al2O6 hard masks. Edge-contacted monolayer-base transistors exhibit on/off ratios reaching ~108, complete electrostatic screening by the base manifesting pure hot-electron injection, and excellent scaling of the output current density with device dimensions. These results open new avenues for incorporating emergent phenomena at oxide interfaces and in heterostructures.

Authors:
 [1];  [2];  [3];  [4]
  1. Stanford Univ., CA (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  3. Univ. of Tokyo (Japan)
  4. Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Gordon and Betty Moore Foundation’s EPiQS Initiative
OSTI Identifier:
1595716
Grant/Contract Number:  
AC02-76SF00515; GBMF4415
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Condensed-matter physics; Nanoscience and technology

Citation Formats

Kim, Brian S. Y., Hikita, Yasuyuki, Yajima, Takeaki, and Hwang, Harold Y. Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit. United States: N. p., 2019. Web. doi:10.1038/s41467-019-13290-3.
Kim, Brian S. Y., Hikita, Yasuyuki, Yajima, Takeaki, & Hwang, Harold Y. Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit. United States. doi:https://doi.org/10.1038/s41467-019-13290-3
Kim, Brian S. Y., Hikita, Yasuyuki, Yajima, Takeaki, and Hwang, Harold Y. Fri . "Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit". United States. doi:https://doi.org/10.1038/s41467-019-13290-3. https://www.osti.gov/servlets/purl/1595716.
@article{osti_1595716,
title = {Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit},
author = {Kim, Brian S. Y. and Hikita, Yasuyuki and Yajima, Takeaki and Hwang, Harold Y.},
abstractNote = {Two-dimensional heterostructures combined with vertical geometries are candidates to probe and utilize the physical properties of atomically-thin materials. The vertical configuration enables a unique form of hot-carrier spectroscopy as well as atomic-scale devices. Here, we present the room-temperature evolution of heteroepitaxial perovskite hot-electron transistors using a SrRuO3 base down to the monolayer limit (~4 Å). As a fundamental electronic probe, we observe an abrupt transition in the hot-electron mean free path as a function of base thickness, coinciding with the thickness-dependent resistive transition. As a path towards devices, we demonstrate the integrated synthesis of perovskite one-dimensional electrical edge contacts using water-soluble and growth-compatible Sr3Al2O6 hard masks. Edge-contacted monolayer-base transistors exhibit on/off ratios reaching ~108, complete electrostatic screening by the base manifesting pure hot-electron injection, and excellent scaling of the output current density with device dimensions. These results open new avenues for incorporating emergent phenomena at oxide interfaces and in heterostructures.},
doi = {10.1038/s41467-019-13290-3},
journal = {Nature Communications},
number = 1,
volume = 10,
place = {United States},
year = {2019},
month = {11}
}

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