Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit

Kim, Brian S.  Y.; Hikita, Yasuyuki; Yajima, Takeaki; Hwang, Harold Y.

doi:10.1038/s41467-019-13290-3

Title: Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit

Journal Article · 21 November 2019 · Nature Communications

DOI: https://doi.org/10.1038/s41467-019-13290-3 · OSTI ID:1595716

Kim, Brian S. Y. ^[1]; Hikita, Yasuyuki ^[2]; Yajima, Takeaki ^[3]; Hwang, Harold Y. ^[4]

Stanford Univ., CA (United States); SLAC
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Univ. of Tokyo (Japan)
Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Two-dimensional heterostructures combined with vertical geometries are candidates to probe and utilize the physical properties of atomically-thin materials. The vertical configuration enables a unique form of hot-carrier spectroscopy as well as atomic-scale devices. Here, we present the room-temperature evolution of heteroepitaxial perovskite hot-electron transistors using a SrRuO₃ base down to the monolayer limit (~4 Å). As a fundamental electronic probe, we observe an abrupt transition in the hot-electron mean free path as a function of base thickness, coinciding with the thickness-dependent resistive transition. As a path towards devices, we demonstrate the integrated synthesis of perovskite one-dimensional electrical edge contacts using water-soluble and growth-compatible Sr₃Al₂O₆ hard masks. Edge-contacted monolayer-base transistors exhibit on/off ratios reaching ~10⁸, complete electrostatic screening by the base manifesting pure hot-electron injection, and excellent scaling of the output current density with device dimensions. These results open new avenues for incorporating emergent phenomena at oxide interfaces and in heterostructures.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: Gordon and Betty Moore Foundation’s EPiQS Initiative; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1595716

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 10; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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