Antisymmetric linear magnetoresistance and the planar Hall effect
Abstract
AbstractThe phenomena of antisymmetric magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager’s theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic domain walls, which both exhibit antisymmetric magnetoresistive behavior. By mapping out the peculiar angular variation of the antisymmetric galvanomagnetic response with respect to the relative alignments of the magnetization, magnetic field, and electrical current, we experimentally distinguish two distinct underlying microscopic mechanisms: namely, spin-dependent scattering of a Zeeman-shifted Fermi surface and anomalous electron velocities. Our work demonstrates that the anomalous electron velocity physics typically associated with the anomalous Hall effect is prevalent beyond the ρxy(Hz) channel, and should be understood as a part of the general galvanomagnetic behavior.
- Authors:
-
[6];
- California Inst. of Technology (CalTech), Pasadena, CA (United States); Johns Hopkins Univ., Baltimore, MD (United States)
- California Inst. of Technology (CalTech), Pasadena, CA (United States); Massachusetts Inst. of Technology, Cambridge, MA (United States)
- California Inst. of Technology (CalTech), Pasadena, CA (United States)
- Okinawa Inst. of Science and Technology Graduate Univ., Onna, Okinawa (Japan)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
- California Inst. of Technology (CalTech), Pasadena, CA (United States); Okinawa Inst. of Science and Technology Graduate Univ., Onna, Okinawa (Japan)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Okinawa Institute of Science and Technology Graduate University (OIST), Government of Japan; USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1595699
- Alternate Identifier(s):
- OSTI ID: 1608190; OSTI ID: 1777865
- Grant/Contract Number:
- AC05-00OR22725; FG02-03ER46076; AC02-06CH11357; DMR-1606858
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 11; Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; condensed matter physics; material science
Citation Formats
Wang, Yishu, Lee, Patrick A., Silevitch, D. M., Gomez, F., Cooper, S. E., Ren, Y., Yan, J.-Q., Mandrus, D., Rosenbaum, T. F., and Feng, Yejun. Antisymmetric linear magnetoresistance and the planar Hall effect. United States: N. p., 2020.
Web. doi:10.1038/s41467-019-14057-6.
Wang, Yishu, Lee, Patrick A., Silevitch, D. M., Gomez, F., Cooper, S. E., Ren, Y., Yan, J.-Q., Mandrus, D., Rosenbaum, T. F., & Feng, Yejun. Antisymmetric linear magnetoresistance and the planar Hall effect. United States. https://doi.org/10.1038/s41467-019-14057-6
Wang, Yishu, Lee, Patrick A., Silevitch, D. M., Gomez, F., Cooper, S. E., Ren, Y., Yan, J.-Q., Mandrus, D., Rosenbaum, T. F., and Feng, Yejun. Fri .
"Antisymmetric linear magnetoresistance and the planar Hall effect". United States. https://doi.org/10.1038/s41467-019-14057-6. https://www.osti.gov/servlets/purl/1595699.
@article{osti_1595699,
title = {Antisymmetric linear magnetoresistance and the planar Hall effect},
author = {Wang, Yishu and Lee, Patrick A. and Silevitch, D. M. and Gomez, F. and Cooper, S. E. and Ren, Y. and Yan, J.-Q. and Mandrus, D. and Rosenbaum, T. F. and Feng, Yejun},
abstractNote = {AbstractThe phenomena of antisymmetric magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager’s theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic domain walls, which both exhibit antisymmetric magnetoresistive behavior. By mapping out the peculiar angular variation of the antisymmetric galvanomagnetic response with respect to the relative alignments of the magnetization, magnetic field, and electrical current, we experimentally distinguish two distinct underlying microscopic mechanisms: namely, spin-dependent scattering of a Zeeman-shifted Fermi surface and anomalous electron velocities. Our work demonstrates that the anomalous electron velocity physics typically associated with the anomalous Hall effect is prevalent beyond the ρxy(Hz) channel, and should be understood as a part of the general galvanomagnetic behavior.},
doi = {10.1038/s41467-019-14057-6},
journal = {Nature Communications},
number = 1,
volume = 11,
place = {United States},
year = {2020},
month = {1}
}
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