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Title: Antisymmetric linear magnetoresistance and the planar Hall effect

Abstract

The phenomena of antisymmetric magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager’s theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic domain walls, which both exhibit antisymmetric magnetoresistive behavior. By mapping out the peculiar angular variation of the antisymmetric galvanomagnetic response with respect to the relative alignments of the magnetization, magnetic field, and electrical current, we experimentally distinguish two distinct underlying microscopic mechanisms: namely, spin-dependent scattering of a Zeeman-shifted Fermi surface and anomalous electron velocities. Our work demonstrates that the anomalous electron velocity physics typically associated with the anomalous Hall effect is prevalent beyond the ρ xy(H z) channel, and should be understood as a part of the general galvanomagnetic behavior.

Authors:
 [1];  [2];  [3];  [3];  [4];  [5];  [6];  [7];  [3];  [8]
  1. California Inst. of Technology (CalTech), Pasadena, CA (United States); Johns Hopkins Univ., Baltimore, MD (United States)
  2. California Inst. of Technology (CalTech), Pasadena, CA (United States); Massachusetts Inst. of Technology, Cambridge, MA (United States)
  3. California Inst. of Technology (CalTech), Pasadena, CA (United States)
  4. Okinawa Inst. of Science and Technology Graduate Univ., Onna, Okinawa (Japan)
  5. Argonne National Lab. (ANL), Argonne, IL (United States)
  6. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  7. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
  8. California Inst. of Technology (CalTech), Pasadena, CA (United States); Okinawa Inst. of Science and Technology Graduate Univ., Onna, Okinawa (Japan)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1595699
Grant/Contract Number:  
AC02-06CH11357; DMR-1606858; FG02-03ER46076; NEAC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 11; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; condensed matter physics; material science

Citation Formats

Wang, Yishu, Lee, Patrick A., Silevitch, D. M., Gomez, F., Cooper, S. E., Ren, Y., Yan, J. -Q., Mandrus, D., Rosenbaum, T. F., and Feng, Yejun. Antisymmetric linear magnetoresistance and the planar Hall effect. United States: N. p., 2020. Web. doi:10.1038/s41467-019-14057-6.
Wang, Yishu, Lee, Patrick A., Silevitch, D. M., Gomez, F., Cooper, S. E., Ren, Y., Yan, J. -Q., Mandrus, D., Rosenbaum, T. F., & Feng, Yejun. Antisymmetric linear magnetoresistance and the planar Hall effect. United States. doi:10.1038/s41467-019-14057-6.
Wang, Yishu, Lee, Patrick A., Silevitch, D. M., Gomez, F., Cooper, S. E., Ren, Y., Yan, J. -Q., Mandrus, D., Rosenbaum, T. F., and Feng, Yejun. Fri . "Antisymmetric linear magnetoresistance and the planar Hall effect". United States. doi:10.1038/s41467-019-14057-6. https://www.osti.gov/servlets/purl/1595699.
@article{osti_1595699,
title = {Antisymmetric linear magnetoresistance and the planar Hall effect},
author = {Wang, Yishu and Lee, Patrick A. and Silevitch, D. M. and Gomez, F. and Cooper, S. E. and Ren, Y. and Yan, J. -Q. and Mandrus, D. and Rosenbaum, T. F. and Feng, Yejun},
abstractNote = {The phenomena of antisymmetric magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager’s theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic domain walls, which both exhibit antisymmetric magnetoresistive behavior. By mapping out the peculiar angular variation of the antisymmetric galvanomagnetic response with respect to the relative alignments of the magnetization, magnetic field, and electrical current, we experimentally distinguish two distinct underlying microscopic mechanisms: namely, spin-dependent scattering of a Zeeman-shifted Fermi surface and anomalous electron velocities. Our work demonstrates that the anomalous electron velocity physics typically associated with the anomalous Hall effect is prevalent beyond the ρxy(Hz) channel, and should be understood as a part of the general galvanomagnetic behavior.},
doi = {10.1038/s41467-019-14057-6},
journal = {Nature Communications},
number = 1,
volume = 11,
place = {United States},
year = {2020},
month = {1}
}

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Works referenced in this record:

Robust ferromagnetism carried by antiferromagnetic domain walls
journal, February 2017

  • Hirose, Hishiro T.; Yamaura, Jun-ichi; Hiroi, Zenji
  • Scientific Reports, Vol. 7, Issue 1
  • DOI: 10.1038/srep42440

Relation between coercive force and microstructure of sintered SmCo 5 permanent magnets
journal, June 1976

  • den Broeder, F. J. A.; Zijlstra, H.
  • Journal of Applied Physics, Vol. 47, Issue 6
  • DOI: 10.1063/1.322990

Nonsaturating magnetoresistance of inhomogeneous conductors: Comparison of experiment and simulation
journal, June 2007


Solitonlike magnetization textures in noncollinear antiferromagnets
journal, April 2016


Spin Hall effect devices
journal, April 2012

  • Jungwirth, Tomas; Wunderlich, Jörg; Olejník, Kamil
  • Nature Materials, Vol. 11, Issue 5
  • DOI: 10.1038/nmat3279

Remarks on linear magneto-resistance and magneto-heat-conductivity
journal, July 1965


Linear magnetoresistance in the low-field limit in density-wave materials
journal, April 2019

  • Feng, Yejun; Wang, Yishu; Silevitch, D. M.
  • Proceedings of the National Academy of Sciences, Vol. 116, Issue 23
  • DOI: 10.1073/pnas.1820092116

Extraordinary galvanomagnetic effects in polycrystalline magnetic films
journal, February 2016


Chiral anomaly and classical negative magnetoresistance of Weyl metals
journal, September 2013


Some New Results on Antiferromagnetism and Ferromagnetism
journal, January 1953


Electrical Resistance of Ferromagnetic Metals
journal, July 1956

  • Kasuya, Tadao
  • Progress of Theoretical Physics, Vol. 16, Issue 1
  • DOI: 10.1143/PTP.16.58

Odd-parity magnetoresistance in pyrochlore iridate thin films with broken time-reversal symmetry
journal, May 2015

  • Fujita, T. C.; Kozuka, Y.; Uchida, M.
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep09711

Continuous metal-insulator transition in the pyrochlore Cd 2 Os 2 O 7
journal, April 2001


Reverse‐field reciprocity for conducting specimens in magnetic fields
journal, February 1987

  • Sample, H. H.; Bruno, W. J.; Sample, S. B.
  • Journal of Applied Physics, Vol. 61, Issue 3
  • DOI: 10.1063/1.338202

New Galvanomagnetic Effect
journal, June 1954


Quantum transport theory of anomalous electric, thermoelectric, and thermal Hall effects in ferromagnets
journal, April 2008


Non-saturating magnetoresistance in heavily disordered semiconductors
journal, November 2003


Note on the Theory of Resistance of a Cubic Semiconductor in a Magnetic Field
journal, July 1950


Berry phase effects on electronic properties
journal, July 2010


Magnetoresistive Measurements on Domain Rotation and Wall Development in Ni-Fe Alloy Films
journal, March 1961

  • West, Forrest G.
  • Journal of Applied Physics, Vol. 32, Issue 3
  • DOI: 10.1063/1.2000442

Anomalous Hall Effect Arising from Noncollinear Antiferromagnetism
journal, January 2014


Anomalous Hall effect
journal, May 2010


All-In–All-Out Magnetic Domains: X-Ray Diffraction Imaging and Magnetic Field Control
journal, April 2015