Imaging Atomically Thin Semiconductors Beneath Dielectrics via Deep Ultraviolet Photoemission Electron Microscopy

Berg, Morgann; Liu, Fangze; Smith, Sean; Copeland, R. Guild; Chan, Calvin K.; Mohite, Aditya D.; Beechem, Thomas E.; Ohta, Taisuke

doi:10.1103/PhysRevApplied.12.064064

Title: Imaging Atomically Thin Semiconductors Beneath Dielectrics via Deep Ultraviolet Photoemission Electron Microscopy

Journal Article · 31 December 2019 · Physical Review Applied

DOI: https://doi.org/10.1103/PhysRevApplied.12.064064 · OSTI ID:1595426

Berg, Morgann ^[1]; Liu, Fangze ^[2]; Smith, Sean ^[3]; Copeland, R. Guild ^[3]; Chan, Calvin K. ^[3]; Mohite, Aditya D. ^[4]; Beechem, Thomas E. ^[3];

^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Rice Univ., Houston, TX (United States). Dept. of Chemical and Biomolecular Engineering

Imaging of fabricated nanostructures or nanomaterials covered by dielectrics is highly sought after for diagnostics of optoelectronics components. Here, we show imaging of atomically thin MoS₂ flakes grown on SiO₂-covered Si substrates and buried beneath HfO₂ overlayers up to 120 nm in thickness using photoemission electron microscopy with deep-UV photoexcitation. Comparison of photoemission yield (PEY) to modeled optical absorption evinced the formation of optical standing waves in the dielectric stacks (i.e., cavity resonances of HfO₂ and SiO₂ layers on Si ). The presence of atomically thin MoS₂ flakes modifies the optical properties of the dielectric stack locally. Furthermore, the cavity resonance condition varies between the sample locations over buried MoS₂ and surrounding areas, resulting in image contrast with submicron lateral resolution. This subsurface sensitivity underscores the role of optical effects in photoemission imaging with low-energy photons. This approach can be extended to nondestructive imaging of buried interfaces and subsurface features needed for analysis of microelectronic circuits and nanomaterial integration into optoelectronic devices.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1595426

Report Number(s):: SAND--2020-0159J; 681864

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 6 Vol. 12; ISSN 2331-7019; ISSN PRAHB2

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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