Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide

Saha, Soham; Diroll, Benjamin T.; Shank, Joshua; Kudyshev, Zhaxylyk; Dutta, Aveek; Chowdhury, Sarah Nahar; Luk, Ting Shan; Campione, Salvatore; Schaller, Richard D.; Shalaev, Vladimir M.; Boltasseva, Alexandra; Wood, Michael G.

doi:10.1002/adfm.201908377

Title: Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide

Journal Article · 12 December 2019 · Advanced Functional Materials

DOI: https://doi.org/10.1002/adfm.201908377 · OSTI ID:1595422

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^[2]; Shank, Joshua ^[3]; Kudyshev, Zhaxylyk ^[1];

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^[1]; Luk, Ting Shan ^[4];

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^[5]; Shalaev, Vladimir M. ^[1];

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Purdue Univ., West Lafayette, IN (United States). Birck Nanotechnology Center; Purdue Univ., West Lafayette, IN (United States). School of Electrical and Computer Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnology
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry

Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low-loss modulators and all-optical switches due to their tunable optical properties, fast optical response, and low losses. Here, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid-infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y-concentrations is observed. Broadband all-optical switching from near-infrared to mid-infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. Our report could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid-infrared region.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357; AC04-94AL85000; NA0003525; SC0017717

OSTI ID:: 1595422

Report Number(s):: SAND--2019-15308J; 682056

Journal Information:: Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 7 Vol. 30; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide

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