A Low‐Current and Analog Memristor with Ru as Mobile Species

Yoon, Jung Ho; Zhang, Jiaming; Lin, Peng; Upadhyay, Navnidhi; Yan, Peng; Liu, Yuzi; Xia, Qiangfei; Yang, J. Joshua

doi:10.1002/adma.201904599

Title: A Low‐Current and Analog Memristor with Ru as Mobile Species

Journal Article · 26 January 2020 · Advanced Materials

DOI: https://doi.org/10.1002/adma.201904599 · OSTI ID:1595164

Yoon, Jung Ho ^[1]; Zhang, Jiaming ^[2]; Lin, Peng ^[3]; Upadhyay, Navnidhi ^[3]; Yan, Peng ^[3]; Liu, Yuzi ^[4]; Xia, Qiangfei ^[3]; Yang, J. Joshua ^[3]

Department of Electrical and Computer Engineering University of Massachusetts, Amherst Amherst MA 01003 USA, Center for Nanoscale Materials Argonne National Laboratory Lemont IL 60439 USA, Center for Electronic Materials Korea Institute of Science and Technology Seoul 02792 Republic of Korea
Hewlett Packard Labs Palo Alto CA 94304 USA
Department of Electrical and Computer Engineering University of Massachusetts, Amherst Amherst MA 01003 USA
Center for Nanoscale Materials Argonne National Laboratory Lemont IL 60439 USA

Abstract The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 µA), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization‐like memristor with a stack of Pt/Ta ₂ O ₅ /Ru is developed. Migration of Ru ions is revealed by energy‐dispersive X‐ray spectroscopy mapping and in situ transmission electron microscopy within a sub‐10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1595164

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 9 Vol. 32; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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