A Low‐Current and Analog Memristor with Ru as Mobile Species

doi:10.1002/adma.201904599

This content will become publicly available on January 26, 2021

Title: A Low‐Current and Analog Memristor with Ru as Mobile Species

Authors:

Yoon, Jung Ho ^[1]; Zhang, Jiaming ^[2]; Lin, Peng ^[3]; Upadhyay, Navnidhi ^[3]; Yan, Peng ^[3]; Liu, Yuzi ^[4]; Xia, Qiangfei ^[3]; Yang, J. Joshua ^[3]

Department of Electrical and Computer EngineeringUniversity of Massachusetts, Amherst Amherst MA 01003 USA, Center for Nanoscale MaterialsArgonne National Laboratory Lemont IL 60439 USA, Center for Electronic MaterialsKorea Institute of Science and Technology Seoul 02792 Republic of Korea
Hewlett Packard Labs Palo Alto CA 94304 USA
Department of Electrical and Computer EngineeringUniversity of Massachusetts, Amherst Amherst MA 01003 USA
Center for Nanoscale MaterialsArgonne National Laboratory Lemont IL 60439 USA

Publication Date:: 2020-01-27

Sponsoring Org.:: USDOE

OSTI Identifier:: 1595164

Grant/Contract Number:: DE‐AC02‐06CH11357

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Advanced Materials

Additional Journal Information:: Journal Name: Advanced Materials; Journal ID: ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)

Country of Publication:: Germany

Language:: English

Citation Formats


                    Yoon, Jung Ho, Zhang, Jiaming, Lin, Peng, Upadhyay, Navnidhi, Yan, Peng, Liu, Yuzi, Xia, Qiangfei, and Yang, J. Joshua. A Low‐Current and Analog Memristor with Ru as Mobile Species.  Germany: N. p., 2020. 
        Web.  doi:10.1002/adma.201904599.

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                    Yoon, Jung Ho, Zhang, Jiaming, Lin, Peng, Upadhyay, Navnidhi, Yan, Peng, Liu, Yuzi, Xia, Qiangfei, & Yang, J. Joshua. A Low‐Current and Analog Memristor with Ru as Mobile Species.  Germany.  doi:10.1002/adma.201904599.

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                    Yoon, Jung Ho, Zhang, Jiaming, Lin, Peng, Upadhyay, Navnidhi, Yan, Peng, Liu, Yuzi, Xia, Qiangfei, and Yang, J. Joshua. Mon .  
        "A Low‐Current and Analog Memristor with Ru as Mobile Species".  Germany.  doi:10.1002/adma.201904599.

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@article{osti_1595164,

  title        = {A Low‐Current and Analog Memristor with Ru as Mobile Species},

  author       = {Yoon, Jung Ho and Zhang, Jiaming and Lin, Peng and Upadhyay, Navnidhi and Yan, Peng and Liu, Yuzi and Xia, Qiangfei and Yang, J. Joshua},

  abstractNote = {},

  doi          = {10.1002/adma.201904599},

  journal      = {Advanced Materials},

  number       = ,

  volume       = ,

  place        = {Germany},

  year         = {2020},

  month        = {1}

}

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DOI: 10.1002/adma.201904599

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Similar Records

This content will become publicly available on January 26, 2021

Title: A Low‐Current and Analog Memristor with Ru as Mobile Species

Citation Formats

Stochastic memristive devices for computing and neuromorphic applications journal, January 2013

Memristance can explain Spike-Time-Dependent-Plasticity in Neural Synapses journal, March 2009

Repeatable, accurate, and high speed multi-level programming of memristor 1T1R arrays for power efficient analog computing applications journal, August 2016

Conductance switching in Ag 2 S devices fabricated by in situ sulfurization journal, February 2009

Temperature Coefficients of Resistance of Metallic Films in the Temperature Range 25° to 600°C journal, March 1959

Observation of conducting filament growth in nanoscale resistive memories journal, January 2012

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag 2 S Nanoscale Ionic Conductor journal, March 2010

Stable self-compliance resistive switching in AlO δ /Ta 2 O 5− x /TaO y triple layer devices journal, December 2014

Electronic and optical properties of oxygen vacancies in amorphous Ta 2 O 5 from first principles journal, January 2017

SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO 2 /Ag based systems journal, March 2017

Properties of reactively-sputtered copper oxide thin films journal, July 1979

Electrochemical metallization switching with a platinum group metal in different oxides journal, January 2016

Nanoscale Memristor Device as Synapse in Neuromorphic Systems journal, April 2010

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory journal, June 2012

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications journal, December 2011

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems journal, September 2015

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations journal, January 2018

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories? journal, July 2015

Highly Improved Uniformity in the Resistive Switching Parameters of TiO 2 Thin Films by Inserting Ru Nanodots journal, February 2013

Memristive devices for computing journal, January 2013

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses journal, June 2011

Analysis of current-voltage characteristics for memristive elements in pattern recognition systems: CURRENT-VOLTAGE CHARACTERISTICS FOR MEMRISTIVE ELEMENTS journal, March 2012

An efficient analog Hamming distance comparator realized with a unipolar memristor array: a showcase of physical computing journal, January 2017

Memristive switching mechanism for metal/oxide/metal nanodevices journal, June 2008

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition journal, August 2005

Deposition of copper oxide films by reactive laser ablation of copper formate in an r.f. oxygen plasma ambient journal, February 1994

Ferroelectric properties and switching endurance of Hf 0.5 Zr 0.5 O 2 films on TiN bottom and TiN or RuO 2 top electrodes : Ferroelectric properties and switching endurance of Hf journal, February 2014

The missing memristor found journal, May 2008

The Electric Resistivity of AgO journal, January 1968

Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell journal, February 2016

Li-Ion Synaptic Transistor for Low Power Analog Computing journal, November 2016

Truly Electroforming-Free and Low-Energy Memristors with Preconditioned Conductive Tunneling Paths journal, August 2017

Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron journal, April 2015

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation journal, August 2011

Electrochemical metallization memories—fundamentals, applications, prospects journal, May 2011

Training and operation of an integrated neuromorphic network based on metal-oxide memristors journal, May 2015

Quantized conductance atomic switch journal, January 2005

Selection of Optimized Materials for CBRAM Based on HT-XRD and Electrical Test Results journal, January 2009

Highly conductive ruthenium oxide thin films by a low-temperature solution process and green laser annealing journal, August 2015

Thermoelectric Seebeck effect in oxide-based resistive switching memory journal, August 2014

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics journal, June 2014

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta 2 O 5 /HfO 2-x /TiN Structure journal, May 2014

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing journal, September 2016

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges journal, July 2009

Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM journal, January 2015

Diffusion of oxygen in amorphous Al 2 O 3 , Ta 2 O 5 , and Nb 2 O 5 journal, July 2014

Metal–Oxide RRAM journal, June 2012

The size effect and the temperature coefficient of resistance in thin films journal, April 1978

Quantum Conductance in Silicon Oxide Resistive Memory Devices journal, September 2013

Mobile silver ions and glass formation in solid electrolytes journal, April 2001

Pt/Ta 2 O 5 /HfO 2− x /Ti Resistive Switching Memory Competing with Multilevel NAND Flash journal, May 2015

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures journal, July 2011

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory journal, January 2010

Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor journal, June 2016

Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories journal, November 2018

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO 2 film as bottom electrode journal, July 2011

Stochastic memristive devices for computing and neuromorphic applications
journal, January 2013

Memristance can explain Spike-Time-Dependent-Plasticity in Neural Synapses
journal, March 2009

Repeatable, accurate, and high speed multi-level programming of memristor 1T1R arrays for power efficient analog computing applications
journal, August 2016

Conductance switching in Ag 2 S devices fabricated by in situ sulfurization
journal, February 2009

Temperature Coefficients of Resistance of Metallic Films in the Temperature Range 25° to 600°C
journal, March 1959

Observation of conducting filament growth in nanoscale resistive memories
journal, January 2012

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag ₂ S Nanoscale Ionic Conductor
journal, March 2010

Stable self-compliance resistive switching in AlO δ /Ta 2 O 5− x /TaO y triple layer devices
journal, December 2014

Electronic and optical properties of oxygen vacancies in amorphous Ta 2 O 5 from first principles
journal, January 2017

SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO 2 /Ag based systems
journal, March 2017

Properties of reactively-sputtered copper oxide thin films
journal, July 1979

Electrochemical metallization switching with a platinum group metal in different oxides
journal, January 2016

Nanoscale Memristor Device as Synapse in Neuromorphic Systems
journal, April 2010

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory
journal, June 2012

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
journal, December 2011

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
journal, September 2015

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
journal, January 2018

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
journal, July 2015

Highly Improved Uniformity in the Resistive Switching Parameters of TiO ₂ Thin Films by Inserting Ru Nanodots
journal, February 2013

Memristive devices for computing
journal, January 2013

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
journal, June 2011

Analysis of current-voltage characteristics for memristive elements in pattern recognition systems: CURRENT-VOLTAGE CHARACTERISTICS FOR MEMRISTIVE ELEMENTS
journal, March 2012

An efficient analog Hamming distance comparator realized with a unipolar memristor array: a showcase of physical computing
journal, January 2017

Memristive switching mechanism for metal/oxide/metal nanodevices
journal, June 2008

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
journal, August 2005

Deposition of copper oxide films by reactive laser ablation of copper formate in an r.f. oxygen plasma ambient
journal, February 1994

Ferroelectric properties and switching endurance of Hf _0.5 Zr _0.5 O ₂ films on TiN bottom and TiN or RuO ₂ top electrodes : Ferroelectric properties and switching endurance of Hf
journal, February 2014

The missing memristor found
journal, May 2008

The Electric Resistivity of AgO
journal, January 1968

Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell
journal, February 2016

Li-Ion Synaptic Transistor for Low Power Analog Computing
journal, November 2016

Truly Electroforming-Free and Low-Energy Memristors with Preconditioned Conductive Tunneling Paths
journal, August 2017

Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron
journal, April 2015

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
journal, August 2011

Electrochemical metallization memories—fundamentals, applications, prospects
journal, May 2011

Training and operation of an integrated neuromorphic network based on metal-oxide memristors
journal, May 2015

Quantized conductance atomic switch
journal, January 2005

Selection of Optimized Materials for CBRAM Based on HT-XRD and Electrical Test Results
journal, January 2009

Highly conductive ruthenium oxide thin films by a low-temperature solution process and green laser annealing
journal, August 2015

Thermoelectric Seebeck effect in oxide-based resistive switching memory
journal, August 2014

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
journal, June 2014

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta 2 O 5 /HfO 2-x /TiN Structure
journal, May 2014

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
journal, September 2016

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009

Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
journal, January 2015

Diffusion of oxygen in amorphous Al 2 O 3 , Ta 2 O 5 , and Nb 2 O 5
journal, July 2014

Metal–Oxide RRAM
journal, June 2012

The size effect and the temperature coefficient of resistance in thin films
journal, April 1978

Quantum Conductance in Silicon Oxide Resistive Memory Devices
journal, September 2013

Mobile silver ions and glass formation in solid electrolytes
journal, April 2001

Pt/Ta 2 O 5 /HfO 2− x /Ti Resistive Switching Memory Competing with Multilevel NAND Flash
journal, May 2015

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta₂O_5−x/TaO_2−x bilayer structures
journal, July 2011

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
journal, January 2010

Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor
journal, June 2016

Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories
journal, November 2018

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO 2 film as bottom electrode
journal, July 2011