Void growth by dislocation adsorption

Journal Article · 19 December 2019 · Materials Research Letters

DOI: https://doi.org/10.1080/21663831.2019.1702114 · OSTI ID:1595028

Sills, Ryan B. ^[1]; Boyce, B. L. ^[2]

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1. Sandia National Lab. (SNL-CA), Livermore, CA (United States); Rutgers Univ., Piscataway, NJ (United States)
2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we propose a dislocation adsorption-based mechanism for void growth in metals, wherein a void grows as dislocations from the bulk annihilate at its surface. The basic process is governed by glide and cross-slip of dislocations at the surface of a void. Using molecular dynamics simulations we show that when dislocations are present around a void, growth occurs more quickly and at much lower stresses than when the crystal is initially dislocation-free. Finally, we show that adsorption-mediated growth predicts an exponential dependence on the hydrostatic stress, consistent with the well-known Rice-Tracey equation.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1595028
• Report Number(s): SAND-2019-14959J; 682315
• Journal Information: Materials Research Letters, Vol. 8, Issue 3; ISSN 2166-3831
• Publisher: Taylor and FrancisCopyright Statement
• Country of Publication: United States
• Language: English