High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

Sabbar, Abbas; Madhusoodhanan, Syam; Al-Kabi, Sattar; Dong, Binzhong; Wang, Jiangbo; Atcitty, Stanley; Kaplar, Robert; Ding, Ding; Mantooth, Alan; Yu, Shui-Qing; Chen, Zhong

doi:10.1038/s41598-019-52126-4

Title: High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

Abstract

Commercial light emitting diode (LED) materials - blue (i.e., InGaN/GaN multiple quantum wells (MQWs) for display and lighting), green (i.e., InGaN/GaN MQWs for display), and red (i.e., Al_0.05Ga_0.45In_0.5P/Al_0.4Ga_0.1In_0.5P for display) are evaluated in range of temperature (77–800) K for future applications in high density power electronic modules. The spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (PL) spectroscopy. The spontaneous emission QE was obtained based on a known model so-called the ABC model. This model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.

Authors:

Sabbar, Abbas ^[1];

^[1];

^[1]; Dong, Binzhong ^[2]; Wang, Jiangbo ^[2]; Atcitty, Stanley ^[3]; Kaplar, Robert ^[3]; Ding, Ding ^[4]; Mantooth, Alan ^[1]; Yu, Shui-Qing ^[1]; Chen, Zhong ^[1]

Univ. of Arkansas, Fayetteville, AK (United States)
HC SemiTek, Zhangjing, Jiangsu (China)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Arizona State Univ., Phoenix, AZ (United States)

Publication Date:: Thu Nov 14 00:00:00 EST 2019

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Arkansas, Fayetteville, AR (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1595022

Alternate Identifier(s):: OSTI ID: 1657484

Report Number(s):: SAND-2019-14869J
Journal ID: ISSN 2045-2322; 682353

Grant/Contract Number:: AC04-94AL85000; SC0016485; NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 36 MATERIALS SCIENCE; Electronic devices; Photonic devices

Citation Formats


                    Sabbar, Abbas, Madhusoodhanan, Syam, Al-Kabi, Sattar, Dong, Binzhong, Wang, Jiangbo, Atcitty, Stanley, Kaplar, Robert, Ding, Ding, Mantooth, Alan, Yu, Shui-Qing, and Chen, Zhong. High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules.  United States: N. p., 2019. 
Web.  doi:10.1038/s41598-019-52126-4.

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                    Sabbar, Abbas, Madhusoodhanan, Syam, Al-Kabi, Sattar, Dong, Binzhong, Wang, Jiangbo, Atcitty, Stanley, Kaplar, Robert, Ding, Ding, Mantooth, Alan, Yu, Shui-Qing, & Chen, Zhong. High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules.  United States.  https://doi.org/10.1038/s41598-019-52126-4

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                    Sabbar, Abbas, Madhusoodhanan, Syam, Al-Kabi, Sattar, Dong, Binzhong, Wang, Jiangbo, Atcitty, Stanley, Kaplar, Robert, Ding, Ding, Mantooth, Alan, Yu, Shui-Qing, and Chen, Zhong. Thu .  
"High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules".  United States.  https://doi.org/10.1038/s41598-019-52126-4.  https://www.osti.gov/servlets/purl/1595022.

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@article{osti_1595022,

  title        = {High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules},

  author       = {Sabbar, Abbas and Madhusoodhanan, Syam and Al-Kabi, Sattar and Dong, Binzhong and Wang, Jiangbo and Atcitty, Stanley and Kaplar, Robert and Ding, Ding and Mantooth, Alan and Yu, Shui-Qing and Chen, Zhong},

  abstractNote = {Commercial light emitting diode (LED) materials - blue (i.e., InGaN/GaN multiple quantum wells (MQWs) for display and lighting), green (i.e., InGaN/GaN MQWs for display), and red (i.e., Al0.05Ga0.45In0.5P/Al0.4Ga0.1In0.5P for display) are evaluated in range of temperature (77–800) K for future applications in high density power electronic modules. The spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (PL) spectroscopy. The spontaneous emission QE was obtained based on a known model so-called the ABC model. This model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.},

  doi          = {10.1038/s41598-019-52126-4},

  journal      = {Scientific Reports},

  number       = 1,

  volume       = 9,

  place        = {United States},

  year         = {Thu Nov 14 00:00:00 EST 2019},

  month        = {Thu Nov 14 00:00:00 EST 2019}

}

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Temperature-dependent light-emitting characteristics of InGaN/GaN diodes
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Photoreflectance of GaAs and Ga 0.82 Al 0.18 As at elevated temperatures up to 600 °C
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Applied Physics Letters, Vol. 53, Issue 12
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High-temperature light emission from InAs quantum dots
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Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells
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Moon, Yong-Tae; Kim, Dong-Joon; Song, Keun-Man
Journal of Applied Physics, Vol. 89, Issue 11
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The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C
journal, November 2008

Watanabe, Naoki; Kimoto, Tsunenobu; Suda, Jun
Journal of Applied Physics, Vol. 104, Issue 10
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Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN
journal, July 2016

Genji, Kumihiro; Uchino, Takashi
Applied Physics Letters, Vol. 109, Issue 2
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Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
journal, May 2018

Sun, Wei; Al Muyeed, Syed Ahmed; Song, Renbo
Applied Physics Letters, Vol. 112, Issue 20
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GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
journal, September 2018

Haller, C.; Carlin, J. -F.; Jacopin, G.
Applied Physics Letters, Vol. 113, Issue 11
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High-temperature photoluminescence spectroscopy in p-type SiC
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Works referencing / citing this record:

Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K
journal, January 2020

Pan, Sai; Sun, Chenhong; Zhou, Yugang
Applied Sciences, Vol. 10, Issue 2
DOI: 10.3390/app10020444

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Title: High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

Abstract

Citation Formats

Refractory In$_{x}$ Ga1−$_{x}$ N Solar Cells for High-Temperature Applications journal, November 2017

Temperature-dependent light-emitting characteristics of InGaN/GaN diodes journal, January 2009

A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN journal, August 2008

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells journal, September 2018

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission journal, May 2018

Characterization of the green band in photoluminescence spectra of heavily doped Al x Ga 1− x N:Si with the Al content x > 0.5 journal, April 2016

Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs journal, January 2007

High-temperature photoluminescence spectroscopy in p-type SiC journal, May 2004

Temperature-dependent electroluminescence of AlGaN-based UV LEDs journal, May 2006

Visible light-emitting diodes using a -plane GaN–InGaN multiple quantum wells over r -plane sapphire journal, May 2004

Temperature dependence of the direct band gap of In x Ga 1 − x As ( x =0.06 and 0.15) journal, November 1991

Photoreflectance of GaAs and Ga 0.82 Al 0.18 As at elevated temperatures up to 600 °C journal, September 1988

High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells journal, October 2001

The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C journal, November 2008

Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs journal, December 1998

Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN journal, July 2016

Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800K for Future Power Electronics Applications journal, January 2018

Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells journal, June 2001

Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE journal, July 2014

High-temperature light emission from InAs quantum dots journal, August 1999

Temperature-dependent light-emitting characteristics of InGaN/GaN diodes journal, January 2009

Photoreflectance of GaAs and Ga 0.82 Al 0.18 As at elevated temperatures up to 600 °C journal, September 1988

High-temperature light emission from InAs quantum dots journal, August 1999

Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells journal, June 2001

The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C journal, November 2008

Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN journal, July 2016

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission journal, May 2018

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells journal, September 2018

High-temperature photoluminescence spectroscopy in p-type SiC journal, May 2004

Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs journal, January 2007

Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K journal, January 2020

Refractory In$_{x}$ Ga1−$_{x}$ N Solar Cells for High-Temperature Applications
journal, November 2017

Temperature-dependent light-emitting characteristics of InGaN/GaN diodes
journal, January 2009

A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
journal, August 2008

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
journal, September 2018

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
journal, May 2018

Characterization of the green band in photoluminescence spectra of heavily doped Al x Ga 1− x N:Si with the Al content x > 0.5
journal, April 2016

Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs
journal, January 2007

High-temperature photoluminescence spectroscopy in p-type SiC
journal, May 2004

Temperature-dependent electroluminescence of AlGaN-based UV LEDs
journal, May 2006

Visible light-emitting diodes using a -plane GaN–InGaN multiple quantum wells over r -plane sapphire
journal, May 2004

Temperature dependence of the direct band gap of In x Ga 1 − x As ( x =0.06 and 0.15)
journal, November 1991

Photoreflectance of GaAs and Ga 0.82 Al 0.18 As at elevated temperatures up to 600 °C
journal, September 1988

High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells
journal, October 2001

The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C
journal, November 2008

Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs
journal, December 1998

Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN
journal, July 2016

Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800K for Future Power Electronics Applications
journal, January 2018

Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells
journal, June 2001

Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE
journal, July 2014

High-temperature light emission from InAs quantum dots
journal, August 1999

Temperature-dependent light-emitting characteristics of InGaN/GaN diodes
journal, January 2009

Photoreflectance of GaAs and Ga 0.82 Al 0.18 As at elevated temperatures up to 600 °C
journal, September 1988

High-temperature light emission from InAs quantum dots
journal, August 1999

Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells
journal, June 2001

The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C
journal, November 2008

Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN
journal, July 2016

Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
journal, May 2018

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
journal, September 2018

High-temperature photoluminescence spectroscopy in p-type SiC
journal, May 2004

Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs
journal, January 2007

Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K
journal, January 2020