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Title: Rubidium Fluoride Post-Deposition Treatment: Impact on the Chemical Structure of the Cu(In,Ga)Se2 Surface and CdS/Cu(In,Ga)Se2 Interface in Thin-Film Solar Cells

Abstract

Here, we present a detailed characterization of the chemical structure of the Cu(In,Ga)Se2 thin-film surface and the CdS/Cu(In,Ga)Se2 interface, both with and without a RbF post-deposition treatment (RbF-PDT). For this purpose, X-ray photoelectron and Auger electron spectroscopy, as well as synchrotron-based soft X-ray emission spectroscopy have been employed. Although some similarities with the reported impacts of light-element alkali PDT (i.e., NaF- and KF-PDT) are found, we observe some distinct differences, which might be the reason for the further improved conversion efficiency with heavy-element alkali PDT. In particular, we find that the RbF-PDT reduces, but not fully removes, the copper content at the absorber surface and does not induce a significant change in the Ga/(Ga + In) ratio. Additionally, we observe an increased amount of indium and gallium oxides at the surface of the treated absorber. These oxides are partly (in the case of indium) and completely (in the case of gallium) removed from the CdS/Cu(In,Ga)Se2 interface by the chemical bath deposition of the CdS buffer.

Authors:
 [1]; ORCiD logo [2];  [3];  [3];  [3];  [4]; ORCiD logo [5];  [6];  [3];  [7];  [7]
  1. Karlsruhe Inst. of Technology (KIT), Hermann-v.-Helmholtz-Platz (Germany)
  2. Karlsruhe Inst. of Technology (KIT), Hermann-v.-Helmholtz-Platz (Germany); Univ. of Würzburg (Germany)
  3. Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Stuttgart (Germany)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Univ. of Nevada, Las Vegas, NV (United States)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  6. Univ. of Würzburg (Germany)
  7. Karlsruhe Inst. of Technology (KIT), Hermann-v.-Helmholtz-Platz (Germany); Univ. of Nevada, Las Vegas, NV (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1594899
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 10; Journal Issue: 43; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Cu(In,Ga)Se2; thin films; CIGSe solar cell; RbF post-deposition treatment; soft X-ray spectroscopy; high efficiency; chemical structure

Citation Formats

Kreikemeyer-Lorenzo, Dagmar, Hauschild, Dirk, Jackson, Philip, Friedlmeier, Theresa M., Hariskos, Dimitrios, Blum, Monika, Yang, Wanli, Reinert, Friedrich, Powalla, Michael, Heske, Clemens, and Weinhardt, Lothar. Rubidium Fluoride Post-Deposition Treatment: Impact on the Chemical Structure of the Cu(In,Ga)Se2 Surface and CdS/Cu(In,Ga)Se2 Interface in Thin-Film Solar Cells. United States: N. p., 2018. Web. doi:10.1021/acsami.8b10005.
Kreikemeyer-Lorenzo, Dagmar, Hauschild, Dirk, Jackson, Philip, Friedlmeier, Theresa M., Hariskos, Dimitrios, Blum, Monika, Yang, Wanli, Reinert, Friedrich, Powalla, Michael, Heske, Clemens, & Weinhardt, Lothar. Rubidium Fluoride Post-Deposition Treatment: Impact on the Chemical Structure of the Cu(In,Ga)Se2 Surface and CdS/Cu(In,Ga)Se2 Interface in Thin-Film Solar Cells. United States. https://doi.org/10.1021/acsami.8b10005
Kreikemeyer-Lorenzo, Dagmar, Hauschild, Dirk, Jackson, Philip, Friedlmeier, Theresa M., Hariskos, Dimitrios, Blum, Monika, Yang, Wanli, Reinert, Friedrich, Powalla, Michael, Heske, Clemens, and Weinhardt, Lothar. Mon . "Rubidium Fluoride Post-Deposition Treatment: Impact on the Chemical Structure of the Cu(In,Ga)Se2 Surface and CdS/Cu(In,Ga)Se2 Interface in Thin-Film Solar Cells". United States. https://doi.org/10.1021/acsami.8b10005. https://www.osti.gov/servlets/purl/1594899.
@article{osti_1594899,
title = {Rubidium Fluoride Post-Deposition Treatment: Impact on the Chemical Structure of the Cu(In,Ga)Se2 Surface and CdS/Cu(In,Ga)Se2 Interface in Thin-Film Solar Cells},
author = {Kreikemeyer-Lorenzo, Dagmar and Hauschild, Dirk and Jackson, Philip and Friedlmeier, Theresa M. and Hariskos, Dimitrios and Blum, Monika and Yang, Wanli and Reinert, Friedrich and Powalla, Michael and Heske, Clemens and Weinhardt, Lothar},
abstractNote = {Here, we present a detailed characterization of the chemical structure of the Cu(In,Ga)Se2 thin-film surface and the CdS/Cu(In,Ga)Se2 interface, both with and without a RbF post-deposition treatment (RbF-PDT). For this purpose, X-ray photoelectron and Auger electron spectroscopy, as well as synchrotron-based soft X-ray emission spectroscopy have been employed. Although some similarities with the reported impacts of light-element alkali PDT (i.e., NaF- and KF-PDT) are found, we observe some distinct differences, which might be the reason for the further improved conversion efficiency with heavy-element alkali PDT. In particular, we find that the RbF-PDT reduces, but not fully removes, the copper content at the absorber surface and does not induce a significant change in the Ga/(Ga + In) ratio. Additionally, we observe an increased amount of indium and gallium oxides at the surface of the treated absorber. These oxides are partly (in the case of indium) and completely (in the case of gallium) removed from the CdS/Cu(In,Ga)Se2 interface by the chemical bath deposition of the CdS buffer.},
doi = {10.1021/acsami.8b10005},
journal = {ACS Applied Materials and Interfaces},
number = 43,
volume = 10,
place = {United States},
year = {2018},
month = {10}
}

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Heavy Alkali Treatment of Cu(In,Ga)Se 2 Solar Cells: Surface versus Bulk Effects
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