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Title: Lattice relaxations around individual dopant atoms in SrTi O 3

Abstract

The local atomic structure around individual dopant atoms can directly influence the electronic properties of a doped material. Here, we use quantitative scanning transmission electron microscopy to study the local lattice relaxations around Sm dopant atoms in SrTiO 3 thin films. These films have recently been shown to undergo successive ferroelectric and superconducting transitions when strained. We show that neighboring Ti-O columns move away from the columns that contain Sm dopants. The observed displacements are, however, more complex than a simple outward expansion of all four surrounding Ti-O columns. Finally, we discuss potential implications, especially for the ferroelectric transition observed in strained films.

Authors:
; ; ;
Publication Date:
Research Org.:
Susanne Stemmer (University of California, Santa Barbara); Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
OSTI Identifier:
1594782
Alternate Identifier(s):
OSTI ID: 1593373
Grant/Contract Number:  
FG02-02ER45994; 1729489; DMR 1720256
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 11; Journal ID: ISSN 2475-9953
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Salmani-Rezaie, Salva, Kim, Honggyu, Ahadi, Kaveh, and Stemmer, Susanne. Lattice relaxations around individual dopant atoms in SrTiO3. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.114404.
Salmani-Rezaie, Salva, Kim, Honggyu, Ahadi, Kaveh, & Stemmer, Susanne. Lattice relaxations around individual dopant atoms in SrTiO3. United States. doi:10.1103/PhysRevMaterials.3.114404.
Salmani-Rezaie, Salva, Kim, Honggyu, Ahadi, Kaveh, and Stemmer, Susanne. Fri . "Lattice relaxations around individual dopant atoms in SrTiO3". United States. doi:10.1103/PhysRevMaterials.3.114404.
@article{osti_1594782,
title = {Lattice relaxations around individual dopant atoms in SrTiO3},
author = {Salmani-Rezaie, Salva and Kim, Honggyu and Ahadi, Kaveh and Stemmer, Susanne},
abstractNote = {The local atomic structure around individual dopant atoms can directly influence the electronic properties of a doped material. Here, we use quantitative scanning transmission electron microscopy to study the local lattice relaxations around Sm dopant atoms in SrTiO3 thin films. These films have recently been shown to undergo successive ferroelectric and superconducting transitions when strained. We show that neighboring Ti-O columns move away from the columns that contain Sm dopants. The observed displacements are, however, more complex than a simple outward expansion of all four surrounding Ti-O columns. Finally, we discuss potential implications, especially for the ferroelectric transition observed in strained films.},
doi = {10.1103/PhysRevMaterials.3.114404},
journal = {Physical Review Materials},
number = 11,
volume = 3,
place = {United States},
year = {2019},
month = {11}
}

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