Lattice relaxations around individual dopant atoms in
Abstract
The local atomic structure around individual dopant atoms can directly influence the electronic properties of a doped material. Here, we use quantitative scanning transmission electron microscopy to study the local lattice relaxations around Sm dopant atoms in SrTiO3 thin films. These films have recently been shown to undergo successive ferroelectric and superconducting transitions when strained. We show that neighboring Ti-O columns move away from the columns that contain Sm dopants. The observed displacements are, however, more complex than a simple outward expansion of all four surrounding Ti-O columns. We discuss potential implications, especially for the ferroelectric transition observed in strained films.
- Authors:
-
- Univ. of California, Santa Barbara, CA (United States)
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States); Susanne Stemmer (University of California, Santa Barbara)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
- OSTI Identifier:
- 1594782
- Alternate Identifier(s):
- OSTI ID: 1593373
- Grant/Contract Number:
- FG02-02ER45994; 1729489; DMR 1720256
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 11; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Salmani-Rezaie, Salva, Kim, Honggyu, Ahadi, Kaveh, and Stemmer, Susanne. Lattice relaxations around individual dopant atoms in SrTiO3. United States: N. p., 2019.
Web. doi:10.1103/PhysRevMaterials.3.114404.
Salmani-Rezaie, Salva, Kim, Honggyu, Ahadi, Kaveh, & Stemmer, Susanne. Lattice relaxations around individual dopant atoms in SrTiO3. United States. https://doi.org/10.1103/PhysRevMaterials.3.114404
Salmani-Rezaie, Salva, Kim, Honggyu, Ahadi, Kaveh, and Stemmer, Susanne. Fri .
"Lattice relaxations around individual dopant atoms in SrTiO3". United States. https://doi.org/10.1103/PhysRevMaterials.3.114404. https://www.osti.gov/servlets/purl/1594782.
@article{osti_1594782,
title = {Lattice relaxations around individual dopant atoms in SrTiO3},
author = {Salmani-Rezaie, Salva and Kim, Honggyu and Ahadi, Kaveh and Stemmer, Susanne},
abstractNote = {The local atomic structure around individual dopant atoms can directly influence the electronic properties of a doped material. Here, we use quantitative scanning transmission electron microscopy to study the local lattice relaxations around Sm dopant atoms in SrTiO3 thin films. These films have recently been shown to undergo successive ferroelectric and superconducting transitions when strained. We show that neighboring Ti-O columns move away from the columns that contain Sm dopants. The observed displacements are, however, more complex than a simple outward expansion of all four surrounding Ti-O columns. We discuss potential implications, especially for the ferroelectric transition observed in strained films.},
doi = {10.1103/PhysRevMaterials.3.114404},
journal = {Physical Review Materials},
number = 11,
volume = 3,
place = {United States},
year = {Fri Nov 08 00:00:00 EST 2019},
month = {Fri Nov 08 00:00:00 EST 2019}
}
Web of Science
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