Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics
Abstract
The ability to control the bulk and interfacial polarization of dielectric polymers is important to their application in organic electronics. As such, we examine the effect of the trifluoromethyl substituent on poly(3-trifluoromethylstyrene) (P3TFMS) as compared to unsubstituted polystyrene (PS) on the I-V relationships of pentacene-based organic field-effect transistors (OFETs). Single- and double-layered films of these polymers were used, with lower layers crosslinked through vinylbenzocyclobutene comonomers before deposition of upper layers. Control experiments verified that the electronic effect of the crosslinking was negligible. We find that the TFM substituent markedly and independently affects both the initial threshold voltage Vth and the nonvolatile, shifted Vth observed after application of static gate voltage, depending on its position adjacent or apart from the pentacene. The trifluoromethyl-bearing polymers exhibit significantly lower magnitude initial threshold voltages (Vth,i of ca. -17 V for P3TFMS compared to -35 V for PS), large threshold voltage shifts after charging by application of static electric fields (ΔVth of ca. 32 V for P3TFMS and 17 V for PS) and greater stability of the ΔVth under repeated charge/discharge cycles. These results are consistent with P3TFMS having fewer interfacial trap states but more stable bulk trap states. The results are applicable to organo-electronicmore »
- Publication Date:
- Research Org.:
- Johns Hopkins Univ., Baltimore, MD (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1594540
- Grant/Contract Number:
- FG02-07ER46465
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 114; Journal Issue: 2; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Plunkett, Evan, Kale, Tejaswini S., Zhang, Qingyang, Katz, Howard E., and Reich, Daniel H. Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics. United States: N. p., 2019.
Web. doi:10.1063/1.5080951.
Plunkett, Evan, Kale, Tejaswini S., Zhang, Qingyang, Katz, Howard E., & Reich, Daniel H. Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics. United States. https://doi.org/10.1063/1.5080951
Plunkett, Evan, Kale, Tejaswini S., Zhang, Qingyang, Katz, Howard E., and Reich, Daniel H. Mon .
"Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics". United States. https://doi.org/10.1063/1.5080951. https://www.osti.gov/servlets/purl/1594540.
@article{osti_1594540,
title = {Effects of trifluoromethyl substituents on interfacial and bulk polarization of polystyrene gate dielectrics},
author = {Plunkett, Evan and Kale, Tejaswini S. and Zhang, Qingyang and Katz, Howard E. and Reich, Daniel H.},
abstractNote = {The ability to control the bulk and interfacial polarization of dielectric polymers is important to their application in organic electronics. As such, we examine the effect of the trifluoromethyl substituent on poly(3-trifluoromethylstyrene) (P3TFMS) as compared to unsubstituted polystyrene (PS) on the I-V relationships of pentacene-based organic field-effect transistors (OFETs). Single- and double-layered films of these polymers were used, with lower layers crosslinked through vinylbenzocyclobutene comonomers before deposition of upper layers. Control experiments verified that the electronic effect of the crosslinking was negligible. We find that the TFM substituent markedly and independently affects both the initial threshold voltage Vth and the nonvolatile, shifted Vth observed after application of static gate voltage, depending on its position adjacent or apart from the pentacene. The trifluoromethyl-bearing polymers exhibit significantly lower magnitude initial threshold voltages (Vth,i of ca. -17 V for P3TFMS compared to -35 V for PS), large threshold voltage shifts after charging by application of static electric fields (ΔVth of ca. 32 V for P3TFMS and 17 V for PS) and greater stability of the ΔVth under repeated charge/discharge cycles. These results are consistent with P3TFMS having fewer interfacial trap states but more stable bulk trap states. The results are applicable to organo-electronic systems such as piezoelectrics for energy harvesting and nonvolatile OFETs as memory, sensing, and logic elements.},
doi = {10.1063/1.5080951},
journal = {Applied Physics Letters},
number = 2,
volume = 114,
place = {United States},
year = {Mon Jan 14 00:00:00 EST 2019},
month = {Mon Jan 14 00:00:00 EST 2019}
}
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Works referenced in this record:
Low-k Insulators as the Choice of Dielectrics in Organic Field-Effect Transistors
journal, March 2003
- Veres, J.; Ogier, S. D.; Leeming, S. W.
- Advanced Functional Materials, Vol. 13, Issue 3
Effect of trifluoromethyl substituents on birefringence of polystyrene: Effect of Trifluoromethyl Substituents on Birefringence of Polystyrene
journal, May 2016
- Tagaya, Akihiro; Koike, Kotaro; Koike, Yasuhiro
- Polymers for Advanced Technologies, Vol. 28, Issue 8
Remarkably improved electromechanical actuation of polyurethane enabled by blending with silicone rubber
journal, January 2017
- Renard, Christophe; Wang, Dongrui; Han, Peng
- RSC Advances, Vol. 7, Issue 37
Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer
journal, January 2007
- Scharnberg, M.; Zaporojtchenko, V.; Adelung, R.
- Applied Physics Letters, Vol. 90, Issue 1
Synthesis, Fabrication, and Heterostructure of Charged, Substituted Polystyrene Multilayer Dielectrics and Their Effects in Pentacene Transistors
journal, April 2016
- Alley, Olivia J.; Plunkett, Evan; Kale, Tejaswini S.
- Macromolecules, Vol. 49, Issue 9
Fully atomistic modeling of an electric field poled guest-host nonlinear optical polymer
journal, September 1999
- Kim, Won-Kook; Hayden, L. Michael
- The Journal of Chemical Physics, Vol. 111, Issue 11
The development of a high-performance perfluorinated polymer electret and its application to micro power generation
journal, September 2008
- Sakane, Yoshihiko; Suzuki, Yuji; Kasagi, Nobuhide
- Journal of Micromechanics and Microengineering, Vol. 18, Issue 10
Temperature dependence of local segmental motion in polystyrene and its variation with molecular weight
journal, July 2003
- Roland, C. M.; Casalini, R.
- The Journal of Chemical Physics, Vol. 119, Issue 3
Rubbing-induced molecular alignment and its relaxation in polystyrene thin films
journal, January 2001
- Tsang, O. C.; Xie, Fengchao; Tsui, O. K. C.
- Journal of Polymer Science Part B: Polymer Physics, Vol. 39, Issue 22
Studies of polymer electrets. II. Factors governing the stabilities of homoelectrets obtained from polystyrene and its derivatives
journal, April 1982
- Mishra, Anu
- Journal of Applied Polymer Science, Vol. 27, Issue 4
Subthreshold slope of thin-film SOI MOSFET's
journal, April 1986
- Colinge, J. -P.
- IEEE Electron Device Letters, Vol. 7, Issue 4
Mobility in Polycrystalline Oligothiophene Field-Effect Transistors Dependent on Grain Size
journal, July 2000
- Horowitz, G.; Hajlaoui, M. E.
- Advanced Materials, Vol. 12, Issue 14
Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret
journal, December 2006
- Baeg, K. -J.; Noh, Y. -Y.; Ghim, J.
- Advanced Materials, Vol. 18, Issue 23
Polymer Gate Dielectric Surface Viscoelasticity Modulates Pentacene Transistor Performance
journal, October 2007
- Kim, C.; Facchetti, A.; Marks, T. J.
- Science, Vol. 318, Issue 5847
Plastic Solar Cells
journal, February 2001
- Brabec, C. J.; Sariciftci, N. S.; Hummelen, J. C.
- Advanced Functional Materials, Vol. 11, Issue 1
Polytrifluormethylstyrole, eine polymerklasse mit aussergewöhnlichen optischen eigenschaften
journal, December 1982
- Bömer, Bruno; Hagemann, Hermann
- Angewandte Makromolekulare Chemie, Vol. 109, Issue 1
Electret transducers: a review
journal, June 1973
- Sessler, G. M.; West, J. E.
- The Journal of the Acoustical Society of America, Vol. 53, Issue 6
Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices
journal, January 2015
- Chou, Ying-Hsuan; Chang, Hsuan-Chun; Liu, Cheng-Liang
- Polymer Chemistry, Vol. 6, Issue 3
Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory
journal, January 2010
- Baeg, Kang-Jun; Noh, Yong-Young; Sirringhaus, Henning
- Advanced Functional Materials, Vol. 20, Issue 2
Organic ferroelectrics
journal, May 2008
- Horiuchi, Sachio; Tokura, Yoshinori
- Nature Materials, Vol. 7, Issue 5, p. 357-366
Large stable second‐harmonic coefficients in an azo‐dye attached polymer oriented by corona poling
journal, April 1994
- Martinez, David R.; Koch, Karl; Ratsavong, Felix K.
- Journal of Applied Physics, Vol. 75, Issue 8
Nonvolatile organic field-effect transistor memory element with a polymeric gate electret
journal, November 2004
- Singh, Th. B.; Marjanović, N.; Matt, G. J.
- Applied Physics Letters, Vol. 85, Issue 22
Functional Organic Field-Effect Transistors
journal, September 2010
- Guo, Yunlong; Yu, Gui; Liu, Yunqi
- Advanced Materials, Vol. 22, Issue 40
The Concept of “Threshold Voltage” in Organic Field-Effect Transistors
journal, August 1998
- Horowitz, Gilles; Hajlaoui, Riadh; Bouchriha, Habib
- Advanced Materials, Vol. 10, Issue 12
Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors
journal, October 2006
- Yoon, Myung-Han; Kim, Choongik; Facchetti, Antonio
- Journal of the American Chemical Society, Vol. 128, Issue 39
Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric
journal, March 2005
- Panzer, Matthew J.; Newman, Christopher R.; Frisbie, C. Daniel
- Applied Physics Letters, Vol. 86, Issue 10
Stretchable Organic Semiconductor Devices
journal, August 2016
- Qian, Yan; Zhang, Xinwen; Xie, Linghai
- Advanced Materials, Vol. 28, Issue 42
Second-harmonic generation and absorption studies of polymer–dye films oriented by corona-onset poling at elevated temperatures
journal, January 1989
- Mortazavi, M. A.; Higgins, B. G.; Dienes, A.
- Journal of the Optical Society of America B, Vol. 6, Issue 4
An analytical model for organic‐based thin‐film transistors
journal, July 1991
- Horowitz, Gilles; Delannoy, Philippe
- Journal of Applied Physics, Vol. 70, Issue 1
Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of pentacene-based thin-film transistors
journal, March 2010
- Hu, Yuanyuan; Qi, Qiong; Jiang, Chao
- Applied Physics Letters, Vol. 96, Issue 13
Electric Moments of Isomeric Trifluoromethyl Styrenes
journal, May 1950
- Kraus, Gerard; Conciatori, Anthony B.
- Journal of the American Chemical Society, Vol. 72, Issue 5
Dielectric properties of polystyrene–aluminum-nitride composites
journal, July 2000
- Yu, Suzhu; Hing, Peter; Hu, Xiao
- Journal of Applied Physics, Vol. 88, Issue 1
Submicrometer Patterning of Charge in Thin-Film Electrets
journal, March 2001
- Jacobs, Heiko O.; Whitesides, George M.
- Science, Vol. 291, Issue 5509, p. 1763-1766
Nonvolatile memory based on pentacene organic field-effect transistors with polystyrene para-substituted oligofluorene pendent moieties as polymer electrets
journal, January 2012
- Hsu, Jung-Ching; Lee, Wen-Ya; Wu, Hung-Chin
- Journal of Materials Chemistry, Vol. 22, Issue 12
Performance improvement of bottom-contact pentacene-based organic thin-film transistors by inserting a thin polytetrafluoroethylene buffer layer
journal, October 2010
- Fan, Ching-Lin; Yang, Tsung-Hsien; Chiu, Ping-Cheng
- Applied Physics Letters, Vol. 97, Issue 14
Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods
journal, January 2010
- Kalb, Wolfgang L.; Batlogg, Bertram
- Physical Review B, Vol. 81, Issue 3
Large and broadband piezoelectricity in smart polymer-foam space-charge electrets
journal, December 2000
- Neugschwandtner, G. S.; Schwödiauer, R.; Vieytes, M.
- Applied Physics Letters, Vol. 77, Issue 23
Towards printable organic thin film transistor based flash memory devices
journal, January 2011
- Leong, Wei Lin; Mathews, Nripan; Tan, Bertha
- Journal of Materials Chemistry, Vol. 21, Issue 14
Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors
journal, July 2002
- Shtein, Max; Mapel, Jonathan; Benziger, Jay B.
- Applied Physics Letters, Vol. 81, Issue 2
Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays
journal, December 2009
- Sekitani, T.; Yokota, T.; Zschieschang, U.
- Science, Vol. 326, Issue 5959
High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric
journal, June 2005
- Stadlober, Barbara; Zirkl, Martin; Beutl, Michael
- Applied Physics Letters, Vol. 86, Issue 24
Influence of grain sizes on the mobility of organic thin-film transistors
journal, June 2005
- Di Carlo, A.; Piacenza, F.; Bolognesi, A.
- Applied Physics Letters, Vol. 86, Issue 26
Electret Transducers: A Review
journal, July 1972
- Sessler, G. M.; West, J. E.
- The Journal of the Acoustical Society of America, Vol. 52, Issue 1A
Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods
text, January 2009
- Kalb, Wolfgang L.; Batlogg, Bertram
- arXiv