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Title: Origin of the butterfly magnetoresistance in a Dirac nodal-line system

Abstract

We report a study on the magnetotransport properties and on the Fermi surfaces (FS) of ZrSi(Se,Te) semimetals. Density-functional theory (DFT) calculations, in absence of spin orbit coupling (SOC), reveal that both the Se and the Te compounds display Dirac nodal lines (DNL) close to the Fermi level εF at symmorphic and nonsymmorphic positions, respectively. We find that the geometry of their FSs agrees well with DFT predictions. ZrSiSe displays low residual resistivities, pronounced magnetoresistivity, high carrier mobilities, and a butterflylike angle-dependent magnetoresistivity (AMR), although its DNL is not protected against gap opening. As in Cd 3As 2, its transport lifetime is found to be 10 2 to 10 3 times larger than its quantum one. ZrSiTe, which possesses a protected DNL, displays conventional transport properties. Our evaluation indicates that both compounds most likely are topologically trivial. Nearly angle-independent effective masses with strong angle-dependent quantum lifetimes lead to the butterfly AMR in ZrSiSe.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ORCiD logo
Publication Date:
Research Org.:
Florida State Univ., Tallahassee, FL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1594243
Alternate Identifier(s):
OSTI ID: 1560317
Grant/Contract Number:  
SC0002613
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 100; Journal Issue: 12; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chiu, Y. -C., Chen, K. -W., Schönemann, R., Quito, V. L., Sur, S., Zhou, Q., Graf, D., Kampert, E., Förster, T., Yang, K., McCandless, G. T., Chan, Julia Y., Baumbach, R. E., Johannes, M. D., and Balicas, L. Origin of the butterfly magnetoresistance in a Dirac nodal-line system. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.100.125112.
Chiu, Y. -C., Chen, K. -W., Schönemann, R., Quito, V. L., Sur, S., Zhou, Q., Graf, D., Kampert, E., Förster, T., Yang, K., McCandless, G. T., Chan, Julia Y., Baumbach, R. E., Johannes, M. D., & Balicas, L. Origin of the butterfly magnetoresistance in a Dirac nodal-line system. United States. doi:10.1103/PhysRevB.100.125112.
Chiu, Y. -C., Chen, K. -W., Schönemann, R., Quito, V. L., Sur, S., Zhou, Q., Graf, D., Kampert, E., Förster, T., Yang, K., McCandless, G. T., Chan, Julia Y., Baumbach, R. E., Johannes, M. D., and Balicas, L. Wed . "Origin of the butterfly magnetoresistance in a Dirac nodal-line system". United States. doi:10.1103/PhysRevB.100.125112.
@article{osti_1594243,
title = {Origin of the butterfly magnetoresistance in a Dirac nodal-line system},
author = {Chiu, Y. -C. and Chen, K. -W. and Schönemann, R. and Quito, V. L. and Sur, S. and Zhou, Q. and Graf, D. and Kampert, E. and Förster, T. and Yang, K. and McCandless, G. T. and Chan, Julia Y. and Baumbach, R. E. and Johannes, M. D. and Balicas, L.},
abstractNote = {We report a study on the magnetotransport properties and on the Fermi surfaces (FS) of ZrSi(Se,Te) semimetals. Density-functional theory (DFT) calculations, in absence of spin orbit coupling (SOC), reveal that both the Se and the Te compounds display Dirac nodal lines (DNL) close to the Fermi level εF at symmorphic and nonsymmorphic positions, respectively. We find that the geometry of their FSs agrees well with DFT predictions. ZrSiSe displays low residual resistivities, pronounced magnetoresistivity, high carrier mobilities, and a butterflylike angle-dependent magnetoresistivity (AMR), although its DNL is not protected against gap opening. As in Cd3As2, its transport lifetime is found to be 102 to 103 times larger than its quantum one. ZrSiTe, which possesses a protected DNL, displays conventional transport properties. Our evaluation indicates that both compounds most likely are topologically trivial. Nearly angle-independent effective masses with strong angle-dependent quantum lifetimes lead to the butterfly AMR in ZrSiSe.},
doi = {10.1103/PhysRevB.100.125112},
journal = {Physical Review B},
number = 12,
volume = 100,
place = {United States},
year = {2019},
month = {9}
}

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